BBY 55-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode 2 • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 1 • Very low capacitance spread VPS05176 Type Marking Ordering Code Pin Configuration Package BBY 55-03W 7 white 1=C SOD-323 Q62702-B0911 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 16 V Forward current IF 20 mA Operating temperature range T op -55 ...+150 °C Storage temperature T stg -55 ...+150 Semiconductor Group Semiconductor Group 11 Value Unit Apr-30-1998 1998-11-01 BBY 55-03W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 3 IR - - 100 DC characteristics Reverse current nA VR = 15 V Reverse current VR = 15 V, TA = 65 °C AC characteristics CT Diode capacitance pF VR = 2 V, f = 1 MHz 14 15 16 VR = 4 V, f = 1 MHz 10 11 12 VR = 10 V, f = 1 MHz 5.5 6 6.5 CT2/CT10 2 2.5 3 - rs - 0.15 0.35 Ω CC - 0.09 - pF Ls - 0.6 - nH Capacitance ratio VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor Group 22 Apr-30-1998 1998-11-01 BBY 55-03W Diode capacitance CT = f (V R) f = 1MHz 30 pF 24 CT 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 V 15 VR Semiconductor Group Semiconductor Group 33 Apr-30-1998 1998-11-01