BBY52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY52-05W S2s Pin Configuration 1=A1 2=A2 Package 3=C1/C2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 7 Forward current IF 20 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 1 Value Unit V Jul-02-2001 BBY52-05W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 10 IR - - 100 DC characteristics Reverse current nA VR = 6 V Reverse current VR = 6 V, TA = 65 °C AC Characteristics Diode capacitance CT pF VR = 1 V, f = 1 MHz 1.4 1.85 2.2 VR = 2 V, f = 1 MHz 0.95 1.5 2 VR = 3 V, f = 1 MHz 0.9 1.35 1.75 VR = 4 V, f = 1 MHz 0.85 1.15 1.45 1.1 1.6 2.1 - rs - 0.9 1.7 Ω CC - 0.1 - pF Ls - 1.4 - nH Capacitance ratio CT1 /CT4 VR = 1 V, VR = 4 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance 2 Jul-02-2001 BBY52-05W Diode capacitance CT = f (VR) Reverse current IR = f (VR ) f = 1MHz TA = 25 °C 45 2.60 pF pA 2.40 2.30 35 2.20 30 2.00 IR CT 2.10 25 1.90 1.80 20 1.70 1.60 15 1.50 1.40 10 1.30 1.20 5 1.10 1.00 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 V 0 0.0 4.0 VR 1.0 2.0 3.0 4.0 5.0 V 7.0 VR 3 Jul-02-2001