BBY57... Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode Low series resistance High capacitance ratio Designed for low tuning voltage operation for VCO's in mobile communications equipment For control elements such as TCXOs and VCXOs BBY57-02L BBY57-02V BBY57-02W BBY57-05W 3 1 2 D 2 D 1 1 Type BBY57-02L* BBY57-02V BBY57-02W BBY57-05W 2 Package TSLP-2 SC79 SCD80 SOT323 Configuration single single single common cathode LS(nH) 0.4 0.6 0.6 1.4 Marking 55 5 55 D5s * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 10 V Forward current IF 20 mA Operating temperature range Top -55 ... 125 °C Storage temperature Tstg -55 ... 150 1 Value Unit Mar-19-2003 BBY57... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 8 V - - 10 VR = 8 V, TA = 85 °C - - 100 AC Characteristics Diode capacitance pF CT 16.5 17.5 18.6 VR = 2.5 V, f = 1 MHz - 9.35 - VR = 3 V, f = 1 MHz - 7 - VR = 4 V, f = 1 MHz 3.5 4.7 5.5 CT1 /CT3 - 2.45 - CT1 /CT4 3 3.7 4.5 VR = 1 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance rS VR = 1 V, f = 470 MHz, BBY57-02L - 0.35 - VR = 1 V, f = 470 MHz, all others - 0.3 - 2 Mar-19-2003 BBY57... Diode capacitance CT = (VR ) Normalized diode capacitance C(TA) /C(25°C)= (TA ); f = 1MHz f = 1MHz 40 1.06 - pF 1.04 CTA/C 25 CT 30 25 1V 1.03 4V 1.02 1.01 20 1 15 0.99 0.98 10 0.97 5 0.96 0 0 0.5 1 1.5 2 2.5 3 V 0.95 -30 4 VR -10 10 30 50 70 °C 100 TA Temperature coefficient of the diode capacitance TCc = (VR) 10 -2 TC C 1/°C 10 -3 10 -4 0 0.5 1 1.5 2 2.5 3 V 4 VR 3 Mar-19-2003