PANASONIC XN1872

Composite Transistors
XN01872 (XN1872)
Silicon n-channel enhancement MOSFET
Unit: mm
2.90+0.20
–0.05
1.9±0.1
(0.95) (0.95)
5
• Two elements incorporated into one package
(Source-coupled FETs)
• Reduction of the mounting area and assembly cost by one half
2
1
(0.65)
0.30+0.10
–0.05
■ Basic Part Number
1.1+0.2
–0.1
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
50
V
Gate-source voltage (Drain open)
VGSO
8
V
Drain curennt
ID
100
mA
Peak drain current
IDP
200
mA
Total power dissipation
PT
300
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
1: Drain (FET1)
2: Drain (FET2)
3: Gate (FET2)
EIAJ: SC-74A
Symbol
4: Source
5: Gate (FET1)
Mini5-G1 Package
Marking Symbol: 5U
Internal Connection
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
1.1+0.3
–0.1
10˚
• 2SK0621 (2SK621) × 2
Parameter
0.4±0.2
4
1.50+0.25
–0.05
3
2.8+0.2
–0.3
■ Features
0.16+0.10
–0.06
5˚
For switching
Conditions
3
4
5
FET2
FET1
2
1
Min
Typ
Max
Unit
VDSS
ID = 100 µA, VGS = 0
Drain-source cutoff current
IDSS
VDS = 10 V, VGS = 0
10
µA
Gate-source cutoff current
IGSS
VGS = 8 V, VDS = 0
40
80
µA
1.5
3.5
V
50
Ω
Drain-source surrender voltage
50
Vth
ID = 100 µA, VDS = VGS
Drain-source ON resistance
RDS(on)
ID = 20 mA, VGS = 5 V
Forward transfer admittance
Yfs
ID = 20 mA, VDS = 5 V, f = 1 kHz
20
VOH
VDS = 5 V, VGS = 1 V, RL = 200 Ω
4.5
VOL
VDS = 5 V, VGS = 5 V, RL = 200 Ω
Gate threshold voltage
Output voltage high-level
Output voltage low-level
Input resistance *1
R1+R2
V
30
mS
V
100
1.0
V
200
kΩ
Turn-on time *2
ton
VDD = 5 V, VGS = 0 V to 5 V, RL = 200 Ω
1.0
µs
Turn-off time *2
toff
VDD = 5 V, VGS = 5 V to 0 V, RL = 200 Ω
1.0
µs
Short-circuit forward transfer capacitance
(Common-source)
Ciss
VDS = 5 V, VGS = 0, f = 1 MHz
15
pF
9
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Resistance ratio R1 /R2 = 1/50
*2: Pulse measurement
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00035BED
1
XN01872
PT  Ta
ID  VDS
120
ID  VGS
120
Ta = 25°C
200
VGS = 6.0 V
80
5.5 V
5.0 V
60
4.5 V
40
4.0 V
100
Drain current ID (mA)
300
VDS = 5 V
100
100
400
Drain current ID (mA)
Total power dissipation PT (mW)
500
3.5 V
20
Ta = −25°C
80
25°C
60
75°C
40
20
3.0 V
0
40
80
120
0
160
0
0
Ambient temperature Ta (°C)
20
10
2
4
6
8
10
Short-circuit forward transfer capacitance (Common source) Ciss ,
Short-circuit output capacitance (Common source) Coss (pF)
Forward transfer admittance Yfs (mS)
30
0
6
12
10
4
Coss
2
0
0.1
Input voltage VIN (V)
100
10
10
10
100
Output current IO (mA)
SJJ00035BED
6
8
10
100
ID = 20 mA
100
80
60
Ta = 75°C
40
25°C
−25°C
20
0
1
4
RDS(on)  VGS
6
1
2
2
120
8
VO = 1 V
Ta = 25°C
1
0
Gate-source voltage VGS (V)
Ciss
VIN  IO
0.1
0.1
10
VGS = 0
f = 1 MHz
Ta = 25°C
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
1 000
8
Ciss , Coss  VDS
VDS = 5 V
Ta = 25°C
40
0
4
Drain-source voltage VDS (V)
Yfs  VDS
50
2
Drain-source ON resistance RDS(on) (Ω)
0
0
2
4
6
8
Gate-source voltage VGS (V)
10
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP