Silicon Junction FETs (Small Signal) 2SK3546J Silicon N-Channel MOSFET For switching 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.50)(0.50) Rating Unit Drain-source voltage VDS 50 V Gate-source voltage (Drain open) VGSO ±7 V Drain current ID 100 mA Peak drain current IDP 200 mA Power dissipation PD 125 mW Channel temperature Tch 125 °C Storage temperature Tstg −55 to +125 °C 5˚ (0.375) 0.10 max. Symbol 0 to 0.02 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1.60±0.05 2 (0.80) 1 0.27±0.02 0.70+0.05 –0.03 • High-speed switching • Wide frequency band 5˚ 0.85+0.05 –0.03 3 ■ Features 1: Gate 2: Source 3: Drain SSMini3-F1 Package Marking Symbol: 5F ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Drain-source surrender voltage VDSS ID = 10 µA, VGS = 0 Drain-source cutoff current IDSS VDS = 50 V, VGS = 0 Gate-source cutoff current IGSS VGS = ±7 V, VDS = 0 Gate threshold voltage Vth ID = 1.0 µA, VDS = 3 V Drain-source ON resistance Forward transfer admittance RDS(on) Yfs Min Typ Max Unit 1.0 µA 50 V ±5.0 µA 1.2 1.5 V ID = 10 mA, VGS = 2.5 V 8 15 Ω ID = 10 mA, VGS = 4.0 V 6 12 0.9 ID = 10 mA, VDS = 3 V, f = 1 kHz 60 mS Short-circuit forward transfer capacitance (Common source) Ciss VDS = 3 V, VGS = 0, f = 1 MHz 12 pF Short-circuit output capacitance (Common source) Coss VDS = 3 V, VGS = 0, f = 1 MHz 7 pF Reverse transfer capacitance (Common source) Crss VDS = 3 V, VGS = 0, f = 1 MHz 3 pF Turn-on time * ton VDD = 3 V, VGS = 0 V to 3 V, RL = 470 Ω 200 ns * toff VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Ω 200 ns Turn-off time 20 100 µF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: ton, toff test circuit VOUT 470 Ω 90% 10% VIN VGS = 3.0 V VDD = 3 V VOUT 10% 50 Ω 90% ton Publication date: July 2003 SJF00037AED toff 1 2SK3546J ID VDS 70 120 60 80 60 40 50 2.3 V 40 2.2 V 30 2.1 V 20 Ta = −25°C 25°C 2.0 V 85°C 150 100 50 20 10 0 0 40 80 Ta = 25°C 0 120 8 Drain-source ON resistance RDS(on) (Ω) 0.10 0.08 0.06 0.04 0.02 0 2 10 0 0 12 1 3 Gate-source voltage VGS (V) 4 2 3 4 5 6 Gate-source voltage VGS (V) RDS(on) VGS 0.12 1 6 60 VDS = 3 V f = 1 kHz Ta = 25°C 0 4 Drain-source voltage VDS (V) Yfs VGS 0.14 2 VIN IO 10 ID = 10 mA VO = 5 V Ta = 25°C 50 Input voltage VIN (V) 0 0.16 Forward transfer admittance Yfs (S) VDS = 3 V 200 Drain current ID (mA) 100 Ambient temperature Ta (°C) 2 ID VGS 250 VGS = 2.5 V 2.4 V Drain current ID (mA) Power dissipation PD (mW) PD Ta 140 40 30 20 25°C Ta = 85°C 10 0 −25°C 0 2 4 Gate-source voltage VGS (V) SJF00037AED 6 1 0.1 1 10 Output current IO (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL