Power Transistors 2SD1258 Silicon NPN triple diffusion planar type ● ● 1.5±0.1 1.0±0.1 1.1max. 2.0 1.5max. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● Unit: mm 6.0±0.5 10.0±0.3 ■ Features 3.4±0.3 8.5±0.2 For power amplification with high forward current transfer ratio 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 2 1:Base 2:Collector 3:Emitter N Type Package 3 (TC=25˚C) Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO Peak collector current ICP Collector current Base current 6 V 2.5 A IC 1 A IB 0.1 A Unit: mm 8.5±0.2 3.4±0.3 6.0±0.3 1.0±0.1 0.8±0.1 Collector power TC=25°C dissipation Ta=25°C 40 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter R0.5 R0.5 0 to 0.4 2.54±0.3 1.1 max. W 1.3 150 ˚C –55 to +150 ˚C 14.7±0.5 V +0.4 200 3.0–0.2 VCBO 4.4±0.5 Collector to base voltage +0 Unit 1.5–0.4 Ratings 10.0±0.3 Symbol 2.0 Parameter 4.4±0.5 ■ Absolute Maximum Ratings 1 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 200V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 25mA, IB = 0 150 Forward current transfer ratio hFE* VCE = 4V, IC = 0.2A 500 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 0.02A Transition frequency fT VCE = 4V, IC = 0.1A, f = 10MHz *h FE V 2000 1 25 V MHz Rank classification Rank hFE Q P 500 to 1200 800 to 2000 Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 2000) in the rank classification. 1 Power Transistors 2SD1258 PC — Ta IC — VCE VCE(sat) — IC (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) (1) 40 30 20 Collector to emitter saturation voltage VCE(sat) (V) 0.5 TC=25˚C Collector current IC (A) Collector power dissipation PC (W) 50 10 IB=400µA 0.4 350µA 300µA 0.3 250µA 200µA 0.2 150µA 100µA 0.1 50µA (2) (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 1 –25˚C 0.3 0.1 0.03 0.03 0.1 0.3 1 300 100 30 10 3 t=10ms 1ms 0.3 300ms 0.1 0.03 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE 2 1000 (V) 1 100 30 10 0.1 0.3 1 3 1 0.01 0.03 10 0.1 0.3 1 3 Collector current IC (A) (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 3 VCE=4V f=10MHz TC=25˚C Rth(t) — t Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 0.3 300 Collector current IC (A) Non repetitive pulse TC=25˚C 0.1 3 103 IC 0.03 1000 Area of safe operation (ASO) 1 0.01 0.01 3000 TC=100˚C 25˚C 1 0.01 0.03 3 100 3 ICP 0.03 fT — IC –25˚C Collector current IC (A) 30 0.1 10000 Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) TC=100˚C –25˚C VCE=4V 3000 1000 25˚C 0.01 0.01 25˚C 0.3 hFE — IC IC/IB=25 3 1 Collector current IC (A) 10000 10 TC=100˚C 3 Collector to emitter voltage VCE (V) VBE(sat) — IC IC/IB=25 10 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10