PANASONIC 2SD1258

Power Transistors
2SD1258
Silicon NPN triple diffusion planar type
●
●
1.5±0.1
1.0±0.1
1.1max.
2.0
1.5max.
High foward current transfer ratio hFE
Satisfactory linearity of foward current transfer ratio hFE
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
10.5min.
●
Unit: mm
6.0±0.5
10.0±0.3
■ Features
3.4±0.3
8.5±0.2
For power amplification with high forward current transfer ratio
0.8±0.1
0.5max.
2.54±0.3
5.08±0.5
2
1:Base
2:Collector
3:Emitter
N Type Package
3
(TC=25˚C)
Collector to emitter voltage
VCEO
150
V
Emitter to base voltage
VEBO
Peak collector current
ICP
Collector current
Base current
6
V
2.5
A
IC
1
A
IB
0.1
A
Unit: mm
8.5±0.2
3.4±0.3
6.0±0.3
1.0±0.1
0.8±0.1
Collector power TC=25°C
dissipation
Ta=25°C
40
PC
Junction temperature
Tj
Storage temperature
Tstg
■ Electrical Characteristics
Parameter
R0.5
R0.5
0 to 0.4
2.54±0.3
1.1 max.
W
1.3
150
˚C
–55 to +150
˚C
14.7±0.5
V
+0.4
200
3.0–0.2
VCBO
4.4±0.5
Collector to base voltage
+0
Unit
1.5–0.4
Ratings
10.0±0.3
Symbol
2.0
Parameter
4.4±0.5
■ Absolute Maximum Ratings
1
5.08±0.5
1
2
1:Base
2:Collector
3:Emitter
N Type Package (DS)
3
(TC=25˚C)
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 200V, IE = 0
100
µA
Emitter cutoff current
IEBO
VEB = 6V, IC = 0
100
µA
Collector to emitter voltage
VCEO
IC = 25mA, IB = 0
150
Forward current transfer ratio
hFE*
VCE = 4V, IC = 0.2A
500
Collector to emitter saturation voltage
VCE(sat)
IC = 0.5A, IB = 0.02A
Transition frequency
fT
VCE = 4V, IC = 0.1A, f = 10MHz
*h
FE
V
2000
1
25
V
MHz
Rank classification
Rank
hFE
Q
P
500 to 1200 800 to 2000
Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 2000) in the rank classification.
1
Power Transistors
2SD1258
PC — Ta
IC — VCE
VCE(sat) — IC
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
(1)
40
30
20
Collector to emitter saturation voltage VCE(sat) (V)
0.5
TC=25˚C
Collector current IC (A)
Collector power dissipation PC (W)
50
10
IB=400µA
0.4
350µA
300µA
0.3
250µA
200µA
0.2
150µA
100µA
0.1
50µA
(2)
(3)
0
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
6
8
10
12
1
–25˚C
0.3
0.1
0.03
0.03
0.1
0.3
1
300
100
30
10
3
t=10ms
1ms
0.3
300ms
0.1
0.03
0.01
1
3
10
30
100
300
Collector to emitter voltage VCE
2
1000
(V)
1
100
30
10
0.1
0.3
1
3
1
0.01 0.03
10
0.1
0.3
1
3
Collector current IC (A)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
102
(2)
10
1
10–1
10–2
10–4
3
VCE=4V
f=10MHz
TC=25˚C
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
Collector current IC (A)
10
0.3
300
Collector current IC (A)
Non repetitive pulse
TC=25˚C
0.1
3
103
IC
0.03
1000
Area of safe operation (ASO)
1
0.01
0.01
3000
TC=100˚C
25˚C
1
0.01 0.03
3
100
3 ICP
0.03
fT — IC
–25˚C
Collector current IC (A)
30
0.1
10000
Transition frequency fT (MHz)
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
TC=100˚C
–25˚C
VCE=4V
3000
1000
25˚C
0.01
0.01
25˚C
0.3
hFE — IC
IC/IB=25
3
1
Collector current IC (A)
10000
10
TC=100˚C
3
Collector to emitter voltage VCE (V)
VBE(sat) — IC
IC/IB=25
10
10–3
10–2
10–1
1
Time t (s)
10
102
103
104
10