Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 1.5±0.1 10.0±0.3 2.54±0.3 Emitter to base voltage VEBO –5 V Peak collector current ICP –8 A Collector current IC –4 A Collector power TC=25°C dissipation Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol Collector cutoff 2SB930 current 2SB930A Collector cutoff 2SB930 current 2SB930A ICES ICEO IEBO Emitter cutoff current Collector to emitter 2SB930 voltage 2SB930A Forward current transfer ratio Conditions 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 min typ max VCE = –60V, VBE = 0 –400 VCE = –80V, VBE = 0 –400 VCE = –30V, IB = 0 –700 VCE = –60V, IB = 0 –700 VEB = –5V, IC = 0 –1 –60 VCEO IC = –30mA, IB = 0 hFE1* VCE = –4V, IC = –1A 70 15 hFE2 VCE = –4V, IC = –3A Base to emitter voltage VBE VCE = –4V, IC = –3A Collector to emitter saturation voltage VCE(sat) IC = –4A, IB = – 0.4A Transition frequency fT VCE = –10V, IC = – 0.1A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf FE1 0 to 0.4 1.1 max. 5.08±0.5 (TC=25˚C) Parameter R0.5 R0.5 2.54±0.3 W 1.3 ■ Electrical Characteristics 1.0±0.1 0.8±0.1 40 PC Ta=25°C 6.0±0.3 V 14.7±0.5 –80 3.4±0.3 +0.4 emitter voltage 2SB930A Unit: mm 8.5±0.2 3.0–0.2 –60 VCEO V 4.4±0.5 2SB930 –80 +0 Collector to –60 VCBO 1:Base 2:Collector 3:Emitter N Type Package 3 1.5–0.4 2SB930A 2 Unit 10.0±0.3 2SB930 base voltage Ratings 0.5max. 5.08±0.5 1 Symbol Collector to *h 0.8±0.1 Absolute Maximum Ratings (TC=25˚C) Parameter 1.1max. 2.0 ■ 1.5max. 4.4±0.5 ● 1.0±0.1 2.0 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ■ Features ● Unit: mm 6.0±0.5 For power amplification Complementary to 2SD1253 and 2SD1253A ● 3.4±0.3 8.5±0.2 IC = –4A, IB1 = – 0.4A, IB2 = 0.4A Unit µA µA mA V –80 250 –2 –1.5 V V 20 MHz 0.2 µs 0.5 µs 0.2 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 Power Transistors 2SB930, 2SB930A PC — Ta IC — VCE IC — VBE –6 40 (1) 35 30 25 20 15 –10 IB=–120mA –80mA –4 –60mA –3 –40mA –20mA –2 –10mA (2) –8 25˚C –6 TC=100˚C –25˚C –4 –2 –8mA –1 5 VCE=–4V –100mA –5 10 TC=25˚C Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) 45 Collector current IC (A) Collector power dissipation PC (W) 50 –5mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –4 –8 –10 3000 25˚C TC=100˚C –25˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 100 1000 TC=100˚C –25˚C 30 10 3 Collector current IC (A) –1 –3 Area of safe operation (ASO) Collector current IC (A) –3 IC t=1ms 10ms –1 300ms – 0.3 – 0.1 – 0.03 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE 10 (V) –1 –3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C ICP 30 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 103 –10 100 Collector current IC (A) –100 –30 300 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 –2.0 VCE=–5V f=1MHz TC=25˚C 3000 25˚C 300 –1.6 fT — IC Transition frequency fT (MHz) –1 –1.2 10000 1000 –3 – 0.8 VCE=–4V Forward current transfer ratio hFE –10 – 0.1 – 0.4 Base to emitter voltage VBE (V) hFE — IC IC/IB=10 – 0.3 2 0 10000 –30 – 0.01 –1 –12 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 Collector to emitter saturation voltage VCE(sat) (V) –6 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10