Power Transistors 2SD1741, 2SD1741A Silicon NPN triple diffusion planar type Unit: mm For power amplification For TV vertical deflection output Complementary to 2SB1171 and 2SB1171A 7.0±0.3 Collector to 2SD1741 Ratings 200 VCBO 200 150 VCEO emitter voltage 2SD1741A 180 V +0.3 2.5 6 V Peak collector current ICP 3 A dissipation 0.75±0.1 IC 2 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter A 15 1 ˚C –55 to +150 ˚C 0.9±0.1 0 to 0.15 2 3 2.3±0.2 4.6±0.4 150 0.5 max. 1.1±0.1 W 1.3 Unit: mm 0 to 0.15 3.0±0.2 VEBO Collector current 3.5±0.2 2.0±0.2 V Emitter to base voltage Collector power TC=25°C 7.0±0.3 Unit 1.0 2SD1741A 1:Base 2:Collector 3:Emitter I Type Package 3 2.5±0.2 base voltage 2 1.0 2SD1741 4.6±0.4 1 (TC=25˚C) Symbol Collector to 2.3±0.2 1.0 max. Parameter 0.4±0.1 2.5±0.2 ■ Absolute Maximum Ratings 1.0±0.2 10.0 –0. High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 0.85±0.1 0.75±0.1 7.2±0.3 ● 1.1±0.1 10.2±0.3 ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 200V, IE = 0 50 µA Emitter cutoff current IEBO VEB = 4V, IC = 0 50 µA VCBO IC = 50µA, IE = 0 Collector to base voltage Collector to emitter 2SD1741 voltage 2SD1741A Emitter to base voltage IC = 5mA, IB = 0 VEBO IE = 500µA, IC = 0 6 * V 150 VCEO hFE1 Forward current transfer ratio 200 V 180 VCE = 10V, IC = 150mA 60 hFE2 VCE = 10V, IC = 400mA 50 V 240 Base to emitter voltage VBE VCE = 10V, IC = 400mA 1 V Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA 1 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz *h FE1 20 MHz Rank classification Rank Q P hFE1 60 to 140 100 to 240 1 Power Transistors 2SD1741, 2SD1741A PC — Ta IC — VCE 1.2 TC=25˚C 1.0 15 (1) 10 5 5mA 4mA 0.6 3mA 0.4 2mA 0.2 TC=100˚C –25˚C 0.8 0.6 0.4 0.2 1mA 0 40 60 80 100 120 140 160 0 0 4 8 12 16 20 24 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC IC/IB=10 3 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 0.1 0.3 1 3 Area of safe operation (ASO) IC t=1ms 1 5ms 0.3 300ms 2SD1741 2SD1741A 0.1 0.03 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE 30 10 3 1 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) ICP 3 100 0.1 0.01 0.03 10 103 100 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 1.2 VCE=10V f=1MHz TC=25˚C 300 Collector current IC (A) 10 1.0 0.3 1 0.01 0.03 1 Non repetitive pulse TC=25˚C 0.8 VCE=10V 3000 Collector current IC (A) 30 0.6 1000 1000 TC=100˚C 0.4 fT — IC 10000 Forward current transfer ratio hFE 10 1 0.2 Base to emitter voltage VBE (V) Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector current IC (A) 1.0 6mA 0.8 25˚C (2) 0 2 VCE=10V IB=7mA Collector current IC (A) (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 1.2 Collector current IC (A) Collector power dissipation PC (W) 20 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10