Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm For low-freauency power amplification ■ Absolute Maximum Ratings 1.5±0.1 1.0±0.1 1.5max. 1.1max. 2.0 High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● 10.0±0.3 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 0.8±0.1 (TC=25˚C) 0.5max. 2.54±0.3 5.08±0.5 Parameter Symbol Collector to 2SD1249 base voltage 2SD1249A Collector to 2SD1249 Ratings 350 VCBO 400 Unit 1 2 1:Base 2:Collector 3:Emitter N Type Package 3 V IC 0.75 A dissipation 35 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics current 2SD1249A Collector cutoff 2SD1249 current 2SD1249A Emitter cutoff current Collector to emitter 2SD1249 voltage 2SD1249A Forward current transfer ratio 0 to 0.4 1.1 max. 5.08±0.5 150 ˚C –55 to +150 ˚C Symbol 2SD1249 R0.5 R0.5 2.54±0.3 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Parameter Collector cutoff 0.8±0.1 W 1.3 +0.4 Collector current Collector power TC=25°C 3.0–0.2 A 4.4±0.5 V 1.5 1.0±0.1 +0 5 ICP 6.0±0.3 1.5–0.4 VEBO Peak collector current 3.4±0.3 10.0±0.3 Emitter to base voltage 8.5±0.2 2.0 300 4.4±0.5 emitter voltage 2SD1249A V 14.7±0.5 Unit: mm 250 VCEO Conditions min typ max VCE = 350V, VBE = 0 1 VCE = 400V, VBE = 0 1 VCE = 150V, IB = 0 1 VCE = 200V, IB = 0 1 IEBO VEB = 5V, IC = 0 1 VCEO IC = 30mA, IB = 0 hFE1* VCE = 10V, IC = 0.3A 40 hFE2 VCE = 10V, IC = 1A 10 ICES ICEO 250 Unit mA mA mA V 300 250 Base to emitter voltage VBE VCE = 10V, IC = 1A 1.5 V Collector to emitter saturation voltage VCE(sat) IC = 1A, IB = 0.2A 1 V Transition frequency fT VCE = 10V, IC = 0.2A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE1 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 MHz 0.5 µs 2 µs 0.5 µs Rank classification Rank R Q P hFE1 40 to 90 70 to 150 120 to 250 1 Power Transistors 2SD1249, 2SD1249A PC — Ta IC — VCE IC — VBE 1.2 40 (1) 30 20 4.0 TC=25˚C VCE=10V 1.0 10 Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 IB=14mA 12mA 10mA 0.8 8mA 0.6 6mA 0.4 4mA 0.2 2mA 3.2 25˚C TC=100˚C –25˚C 2.4 1.6 0.8 (2) (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 6 8 10 3000 1000 1 25˚C –25˚C 0.1 0.03 0.03 0.1 0.3 1 300 TC=100˚C 100 25˚C –25˚C 30 10 3 1 0.01 0.03 3 0.1 0.3 1 3 ICP t=10ms 1 1ms IC 0.3 300ms 0.01 1 3 10 30 100 2SD1249A 2SD1249 0.1 0.03 300 Collector to emitter voltage VCE 30 10 3 1 1000 (V) 0.01 0.03 0.1 0.3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 3 100 0.1 0.001 0.003 10 103 10 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 2.4 VCE=10V f=10MHz TC=25˚C 300 Collector current IC (A) Non repetitive pulse TC=25˚C 2.0 0.3 Area of safe operation (ASO) 30 1.6 fT — IC Transition frequency fT (MHz) Forward current transfer ratio hFE TC=100˚C 0.01 0.01 1.2 VCE=10V 3 0.3 0.8 1000 IC/IB=10 10 0.4 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 0 10000 Collector current IC (A) 2 12 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 1