Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB946 and 2SB946A Unit: mm ● 0.7±0.1 ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SD1271 base voltage 2SD1271A Collector to 2SD1271 Ratings 130 VCBO 150 80 VCEO emitter voltage 2SD1271A 100 Unit V 7 V Peak collector current ICP 15 A Collector current IC 7 A dissipation PC Ta=25°C Junction temperature Tj Storage temperature Tstg 4.2±0.2 7.5±0.2 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 ■ Electrical Characteristics φ3.1±0.1 V VEBO 40 2.7±0.2 2.54±0.25 Emitter to base voltage Collector power TC=25°C 16.7±0.3 ● Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 4.0 ● 14.0±0.5 ● 10.0±0.2 Solder Dip ■ Features 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 100V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 50 µA VCEO IC = 10mA, IB = 0 hFE1 VCE = 2V, IC = 0.1A 45 hFE2* VCE = 2V, IC = 3A 90 Collector to emitter saturation voltage VCE(sat) IC = 5A, IB = 0.25A 0.5 V Base to emitter saturation voltage VBE(sat) IC = 5A, IB = 0.25A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Collector to emitter 2SD1271 voltage 2SD1271A Forward current transfer ratio *h FE2 IC = 3A, IB1 = 0.3A, IB2 = – 0.3A, VCC = 50V 80 V 100 260 30 MHz 0.5 µs 1.5 µs 0.1 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD1271, 2SD1271A IC — VCE 30 20 (2) 10 8 IB=55mA 50mA 45mA 40mA 6 35mA 30mA 4 20mA 15mA 2 10mA (3) (4) 5mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 VCE(sat) — IC 10 3 1 TC=100˚C 25˚C 0.1 –25˚C 0.03 0.3 1 3 Base to emitter saturation voltage VBE(sat) (V) 30 0.1 3 (1) (2) 1 0.3 0.1 0.03 0.01 0.1 10 0.3 hFE — IC 1 3 10 0.03 0.01 0.01 0.03 1000 TC=100˚C 25˚C 100 –25˚C 30 10 3 3 Collector current IC (A) 10 1 3 100 IC/IB=20 30 10 3 TC=–25˚C 1 100˚C 0.3 25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 Cob — VCB VCE=10V f=10MHz TC=25˚C IE=0 f=1MHz TC=25˚C 3000 1000 300 100 30 10 3 1 0.3 Collector current IC (A) 1000 300 0.1 10000 3000 3000 Transition frequency fT (MHz) Forward current transfer ratio hFE 0.1 fT — IC VCE=2V 2 (1) Collector current IC (A) 30 10000 0.3 (2) 0.3 Collector current IC (A) 10000 0.1 1 VBE(sat) — IC (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 10 Collector current IC (A) 1 0.01 0.03 3 VBE(sat) — IC IC/IB=20 0.01 0.01 0.03 12 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 10 Collector to emitter voltage VCE (V) 100 0.3 10 Collector output capacitance Cob (pF) 0 Base to emitter saturation voltage VBE(sat) (V) (1) 40 TC=25˚C Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) VCE(sat) — IC 10 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 50 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 300 100 30 10 3 1 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Power Transistors 2SD1271, 2SD1271A ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C ICP 3 tstg 1 ton 0.3 tf 0.1 0.03 10 IC 3 t=0.5ms 10ms 1 1ms 0.3 DC 0.1 0.03 0.01 0.01 0 1 2 3 4 5 6 7 8 1 Collector current IC (A) 3 10 30 2SD1271A 10 Non repetitive pulse TC=25˚C 30 Collector current IC (A) 30 Switching time ton,tstg,tf (µs) Area of safe operation (ASO) 100 2SD1271 100 100 300 1000 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3