Power Transistors 2SD2469, 2SD2469A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1607 Unit: mm ■ Features ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SD2469 base voltage 2SD2469A Collector to 2SD2469 Ratings 130 VCBO 150 80 VCEO emitter voltage 2SD2469A 100 Unit V VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A dissipation 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 3.0±0.2 2.6±0.1 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package W 2 ■ Electrical Characteristics 2.9±0.2 1.2±0.15 1.45±0.15 V Emitter to base voltage Collector power TC=25°C 15.0±0.3 ● 9.9±0.3 4.1±0.2 8.0±0.2 Solder Dip ● φ3.2±0.1 +0.5 ● 4.6±0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 13.7–0.2 ● 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 100V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 50 µA VCEO IC = 10mA, IB = 0 hFE1 VCE = 2V, IC = 0.1A 45 hFE2* VCE = 2V, IC = 3A 90 Collector to emitter saturation voltage VCE(sat) IC = 5A, IB = 0.25A 0.5 V Base to emitter saturation voltage VBE(sat) IC = 5A, IB = 0.25A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Collector to emitter 2SD2469 voltage 2SD2469A Forward current transfer ratio *h FE2 IC = 3A, IB1 = 0.3A, IB2 = – 0.3A, VCC = 50V 80 V 100 260 30 MHz 0.5 µs 1.5 µs 0.1 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD2469, 2SD2469A IC — VCE (1) 40 30 20 (2) 10 TC=25˚C Collector current IC (A) 8 IB=55mA 50mA 45mA 40mA 6 35mA 30mA 4 20mA 15mA 2 10mA (3) (4) 5mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 3 1 (2) (1) 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) VBE(sat) — IC VBE(sat) — IC IC/IB=20 30 10 3 1 TC=100˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 3 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 10 3 (1) (2) 1 0.3 0.1 0.03 0.01 0.1 10 Base to emitter saturation voltage VBE(sat) (V) 100 Base to emitter saturation voltage VBE(sat) (V) 100 Collector current IC (A) 0.3 1 3 10 hFE — IC TC=–25˚C 1 100˚C 0.3 25˚C 0.1 0.03 VCE=10V f=10MHz TC=25˚C Transition frequency fT (MHz) TC=100˚C 25˚C 100 –25˚C 30 10 3 3 Collector current IC (A) 10 3 10 IE=0 f=1MHz TC=25˚C 1000 300 100 30 10 3 1 1 3000 1000 300 0.3 Cob — VCB 3000 1000 0.1 Collector current IC (A) 10000 VCE=2V 0.3 3 fT — IC 3000 0.1 10 0.01 0.01 0.03 30 10000 1 0.01 0.03 IC/IB=20 30 Collector current IC (A) 10000 Forward current transfer ratio hFE 12 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 10 Collector to emitter voltage VCE (V) VCE(sat) — IC 2 10 Collector output capacitance Cob (pF) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) VCE(sat) — IC 10 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 50 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 300 100 30 10 3 1 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Power Transistors 2SD2469, 2SD2469A ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C ICP 3 tstg 1 ton 0.3 tf 0.1 0.03 10 IC t=0.5ms 3 10ms DC 1 1ms 0.3 0.1 0.03 0.01 0.01 0 1 2 3 4 5 6 7 8 1 Collector current IC (A) 3 10 30 2SD2469A 10 Non repetitive pulse TC=25˚C 30 Collector current IC (A) 30 Switching time ton,tstg,tf (µs) Area of safe operation (ASO) 100 2SD2469 100 100 300 1000 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3