Power Transistors 2SD2486 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm ■ Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Peak collector current ICP 8 A Collector current IC 4 A Base current IBP 2 A Collector power TC=25°C Ta=25°C dissipation 25 PC Junction temperature Tj Storage temperature Tstg 4.2±0.2 7.5±0.2 φ3.1±0.1 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 ■ Electrical Characteristics 16.7±0.3 (TC=25˚C) 2.7±0.2 4.0 ● 14.0±0.5 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 Solder Dip ● 10.0±0.2 0.7±0.1 ■ Features 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 7V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 60 hFE1 * typ VCB = 60V, IE = 0 max Unit 10 µA 10 µA V VCE = 2V, IC = 0.8A 500 hFE2 VCE = 2V, IC = 2A 60 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 50mA 0.5 V Base to emitter saturation voltage VBE(sat) IC = 2A, IB = 50mA 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *h FE1 IC = 2A, IB1 = 50mA, IB2 = –50mA, VCC = 50V 1000 2000 70 MHz 0.5 µs 3.6 µs 1.1 µs Rank classification Rank hFE1 Q R 500 to 1200 800 to 2000 1 Power Transistors 2SD2486 IC — VCE (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) (1) 25 20 15 (2) 10 IB=5.0mA 2.5 (3) 5 3.0mA 2.5mA 2.0 2.0mA 1.5mA 1.5 1.0mA 1.0 0.5mA 0.5 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 8 100˚C 0.1 0.03 3 25˚C TC=100˚C –25˚C 300 100 30 0.1 0.3 1 3 Switching time ton,tstg,tf (µs) 300 100 30 10 3 10 30 100 Collector to base voltage VCB (V) 10 100 30 10 10 0.1 0.3 1 3 10 Area of safe operation (ASO) 3 tstg 1 Non repetitive pulse TC=25˚C 30 tf ton 0.3 0.1 10 ICP IC t=1ms 3 10ms 1 DC 0.3 0.1 0.03 0.01 0.01 3 3 100 0.03 1 1 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=40 (IB1=–IB2) VCC=50V TC=25˚C 30 1000 0.3 300 1 0.01 0.03 10 ton, tstg, tf — IC 100 IE=0 f=1MHz TC=25˚C 0.1 VCE=10V f=10MHz TC=25˚C Collector current IC (A) Cob — VCB 0.3 0.01 0.01 0.03 3 10 0.01 0.03 10 10000 1 0.1 0.03 1000 Collector current IC (A) 3000 –25˚C 0.1 3000 1000 1 25˚C 0.3 Collector current IC (A) Transition frequency fT (MHz) 25˚C 0.3 1 fT — IC 30000 3000 0.1 TC=100˚C 3 VCE=2V Forward current transfer ratio hFE 3 0.01 0.01 0.03 10 10000 10000 10 TC=–25˚C IC/IB=40 30 hFE — IC IC/IB=40 0.3 12 100000 30 1 10 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 Base to emitter saturation voltage VBE(sat) (V) 6 Collector current IC (A) 0 Collector output capacitance Cob (pF) TC=25˚C (4) 0 2 VCE(sat) — IC 4.0mA Collector current IC (A) Collector power dissipation PC (W) 3.0 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 30 0 1 2 3 4 Collector current IC (A) 5 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V)