Power Transistors 2SB0943 Silicon PNP epitaxial planar type Unit: mm 14.0±0.5 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 • Low collector to emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 φ 3.1±0.1 1.4±0.1 Solder Dip (4.0) ■ Features 16.7±0.3 0.7±0.1 For power switching Complementary to 2SD1268 0.8±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Rating Unit Collector to base voltage VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current ICP −6 A Collector current IC −3 A PC 30 W TC = 25°C Ta = 25°C 0.5+0.2 –0.1 2.54±0.3 Symbol Collector power dissipation 1.3±0.2 5.08±0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 TO-220F Package 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = −100 V, IE = 0 −10 µA Emitter cutoff current IEBO VEB = −5 V, IC = 0 −50 µA Collector to emitter voltage VCEO IC = −10 mA, IB = 0 −80 Forward current transfer ratio hFE1 VCE = −2 V, IC = − 0.1 A 45 hFE2 * VCE = −2 V, IC = − 0.5 A 90 Collector to emitter saturation voltage VCE(sat) IC = −2 A, IB = − 0.1 A Base to emitter saturation voltage VBE(sat) IC = −2 A, IB = − 0.1 A V 260 − 0.5 −1.5 V V fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = − 0.5 A, IB1 = −50 mA, IB2 = 50 mA 0.3 µs Storage time tstg 1.1 µs Fall time tf 0.3 µs Transition frequency Note) *: Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 2SB0943 Power Transistors PC T a IC VCE 40 30 (1) 20 10 TC=25˚C –5 (2) (3) IB=–100mA –4 –80mA –60mA –3 –40mA –30mA –2 –20mA –1 –16mA –12mA –8mA (4) –4mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 10 –3 – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 –1 –3 30 10 –30 30 10 –100 Collector to base voltage VCB (V) –1 –3 –10 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–50V TC=25˚C 10 3 1 tstg 0.3 –10 –3 ICP t=0.5ms IC 1ms –1 10ms – 0.3 ton tf 0.1 Non repetitive pulse TC=25˚C –30 DC – 0.1 – 0.03 0.01 –10 100 Collector current IC (A) 0.03 3 –3 300 –100 30 Switching time ton,tstg,tf (µs) 100 –10 VCE=–10V f=10MHz TC=25˚C 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 ton, tstg, tf IC IE=0 f=1MHz TC=25˚C –3 3 100 300 –1 Collector current IC (A) 1000 Cob VCB –1 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) 10000 1 – 0.1 – 0.3 – 0.03 3000 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 1000 25˚C –25˚C VCE=–2V 3000 Collector current IC (A) 3000 TC=100˚C fT I C 1000 –25˚C 25˚C –1 – 0.1 Transition frequency fT (MHz) –10 –1 –3 10000 IC/IB=20 –30 TC=–100˚C –10 hFE IC 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 8 –30 Collector to emitter voltage VCE (V) VBE(sat) IC –100 Collector output capacitance Cob (pF) 6 IC/IB=20 – 0.3 Collector current IC (A) 0 Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 2 VCE(sat) IC –100 –6 Collector current IC (A) Collector power dissipation PC (W) 50 0 – 0.8 –1.6 –2.4 Collector current IC (A) –3.2 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB0943 Rth(t) t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3