HP4410DY Data Sheet August 1999 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 10A, 30V • rDS(ON) = 0.0135Ω at ID = 10A, VGS = 10V • rDS(ON) = 0.020Ω at ID = 8A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information HP4410DY PACKAGE SO-8 4468.4 Features This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. PART NUMBER File Number SOURCE(1) DRAIN(8) SOURCE(2) DRAIN(7) SOURCE(3) DRAIN(6) GATE(4) DRAIN(5) BRAND P4410DY NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HP4410DYT. Packaging SO-8 8-3 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 HP4410DY Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified HP4410DY UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 30 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 30 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±16 V Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (10µs Pulse Width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 10 50 A A Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 0.02 W W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TA = 25oC to 125oC. Electrical Specifications TA = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - V Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 9) 1 - - V VDS = 30V, VGS = 0V - - 1 µA VDS = 30V, VGS = 0V, TA = 55oC - - 25 µA VGS = ±16V - - 100 nA ID = 8A, VGS = 4.5V (Figures 6, 8) - 0.015 0.020 Ω ID = 10A, VGS = 10V (Figures 6, 8) - 0.011 0.0135 Ω VDD = 25V, ID ≅ 1A, RL = 25Ω, VGEN = 10V, RGS = 6Ω - 15 30 ns - 9 20 ns td(OFF) - 70 100 ns tf - 20 80 ns - 35 60 nC Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current Drain to Source On Resistance IGSS rDS(ON) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Total Gate Charge Qg(TOT) VDS = 15V, VGS = 10V, ID ≅ 10A Gate to Source Charge Qgs - 7.5 - nC Gate to Drain Charge Qgd - 5.8 - nC Input Capacitance CISS - 1600 - pF Output Capacitance COSS - 685 - pF Reverse Transfer Capacitance CRSS - 115 - pF Thermal Resistance Junction to Ambient RθJA - - 50 oC/W MIN TYP MAX UNITS ISD = 2.3A (Figure 7) - 0.75 1.1 V ISD = 2.3A, dISD/dt = 100A/µs - 50 80 ns VDS = 25V, VGS = 0V, f = 1MHz (Figure 4) Pulse Width < 10s (Figure 11) Device Mounted on FR-4 Material Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage Reverse Recovery Time VSD trr 8-4 TEST CONDITIONS HP4410DY Typical Performance Curves 50 VGS = 10V - 5V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 4V 40 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 50 Unless Otherwise Specified 30 3V 20 10 40 30 20 10 TA = 125oC 25oC 0 0 0 2 4 8 6 10 0 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 2 3 4200 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD 3500 0.025 C, CAPACITANCE (pF) ON STATE RESISTANCE (W) 5 FIGURE 2. TRANSFER CHARACTERISTICS 0.030 rDS(ON), DRAIN TO SOURCE 4 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 1. OUTPUT CHARACTERISTICS 0.020 VGS = 4.5V 0.015 0.010 VGS = 10V 2800 2100 CISS 1400 COSS 0.005 CRSS 700 0 0 0 10 20 30 40 50 0 6 12 18 24 VDS , DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) FIGURE 3. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 4. 10 30 CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 2.0 VPULSE DURATION = 80µs DS = 15V DUTY CYCLE = 0.5% MAX ID = 10A NORMALIZED DRAIN TO SOURCE ON RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) -55oC 8 6 4 2 0 0 9 18 27 36 45 Qg, GATE CHARGE (nC) FIGURE 5. GATE TO SOURCE VOLTAGE vs GATE CHARGE 8-5 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX ID = 10A 1.5 1.0 0.5 0 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 FIGURE 6. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 150 HP4410DY Typical Performance Curves Unless Otherwise Specified (Continued) 0.10 50 TJ = 150oC rDS(ON), DRAIN TO SOURCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TJ = 25oC 10 ON STATE RESISTANCE (W) ISD, SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0.08 0.06 ID = 10A 0.04 0.02 0 1 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 0 VSD, SOURCE TO DRAIN VOLTAGE (V) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 7. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE TO SOURCE VOLTAGE 0.4 80 60 0.0 POWER (W) VGS(TH) VARIANCE (V) 0.2 ID = 250µA -0.2 -0.4 40 20 -0.6 -0.8 -25 -50 0 25 50 75 100 125 150 0 0.01 TJ, JUNCTION TEMPERATURE (oC) 0.10 1.00 10.00 t, PULSE WIDTH (s) FIGURE 9. GATE THRESHOLD VOLTAGE VARIANCE vs JUNCTION TEMPERATURE FIGURE 10. SINGLE PULSE POWER CAPABILITY vs PULSE WIDTH 2 THERMAL IMPEDANCE ZθJA, NORMALIZED 1 DUTY CYCLE = 0.5 PDM 0.2 0.1 t1 0.1 0.05 t2 DUTY CYCLE, D = t1/t2 TJ = PD x ZθJA x RθJA + TA 0.02 SURFACE MOUNTED SINGLE PULSE 0.01 10-4 10-3 10-2 10-1 1 t, RECTANGULAR PULSE DURATION (s) FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 8-6 10 30 HP4410DY Test Circuits and Waveforms VDS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + VGS - VDD 10% 10% 0 DUT 90% RGS VGS VGS 0 50% 10% FIGURE 12. SWITCHING TIME TEST CIRCUIT 50% PULSE WIDTH FIGURE 13. SWITCHING TIME WAVEFORM VDD VDS RL Qg Qgd VGS Qgs VGS + VDD VDS DUT 0 Ig(REF) Ig(REF) 0 FIGURE 14. GATE CHARGE TEST CIRCUIT FIGURE 15. GATE CHARGE WsAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 8-7 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029