RFP2N20 Data Sheet July 1999 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 3.500Ω Symbol D G Ordering Information RFP2N20 PACKAGE TO-220AB 2881.2 • 2A, 200V Formerly developmental type TA09289. PART NUMBER File Number S BRAND RFP2N20 NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB DRAIN (FLANGE) 4-518 SOURCE DRAIN GATE CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP2N20 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP2N20 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 200 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 200 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 2 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 5 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 25 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 W/ oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage SYMBOL MIN TYP MAX 200 - - VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V VDS = Rated BVDSS - - 1 µA VDS = 0.8 x Rated BVDSS, TC = 125oC - - 25 µA VGS = ±20V, VDS = 0 - - ±100 nA ID = 2A, VGS = 10V, (Figures 6, 7) - - 3.500 Ω ID = 2A, VGS = 10V - - 7.0 V ID ≈ 1A, VDD = 100V, RG = 50Ω VGS = 10V, RL = 96.5Ω (Figure 10) - 15 25 ns - 20 30 ns td(OFF) - 25 40 ns tf - 15 25 ns - - 200 pF BVDSS VGS(TH) Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time IDSS IGSS rDS(ON) VDS(ON) td(ON) Rise Time tr Turn-Off Delay Time Fall Time TEST CONDITIONS ID = 250µA, VGS = 0 UNITS Input Capacitance CISS Output Capacitance COSS - - 60 pF Reverse-Transfer Capacitance CRSS - - 25 pF Thermal Resistance Junction to Case RθJC - - 5 oC/W VGS = 0V, VDS = 25V f = 1MHz, (Figure 9) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 1A - - 1.4 V ISD = 2A, dlSD/dt = 50A/µs - 200 - ns NOTES: 2. Pulsed test: width ≤ 300µs duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 4-519 RFP2N20 Typical Performance Curves Unless Otherwise Specified 2.5 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 0 25 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 3 TJ = MAX RATED SINGLE PULSE TC = 25oC ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 50 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.10 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.5 T = 25oC C 2 VGS = 20V VGS = 10V VGS = 8V VGS = 7V 1.5 VGS = 6V 1 VGS = 5V 0.5 VGS = 4V 0.01 1 10 0 1000 100 0 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 7 FIGURE 4. SATURATION CHARACTERISTICS 3 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS = 15V 2.5 -40oC 125oC 2 1.5 1 25oC 0.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V 6 25oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 2 3 4 5 6 VDS, DRAIN TO SOURCE VOLTAGE (V) 125oC 5 125oC 4 25oC 3 -40oC 2 1 -40oC 0 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 4-520 10 0 0.5 1 1.5 ID, DRAIN CURRENT (A) 2 2.5 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT RFP2N20 1.4 ID = 2A, VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1.5 1 0.5 0 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 0.8 0 50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 10 200 VDS, DRAIN TO SOURCE VOLTAGE (V) 180 CISS 140 C, CAPACITANCE (pF) 1.0 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 100 60 COSS 20 CRSS 0 VGS = VDS ID = 250µA 1.2 NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2 Unless Otherwise Specified (Continued) 150 GATE SOURCE VOLTAGE 100 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 8 6 4 RL = 100Ω IG(REF) = 0.09µA VGS = 10V 50 2 DRAIN SOURCE VOLTAGE 0 0 0 VDD = BVDSS VDD = BVDSS VGS, GATE TO SOURCE VOLTAGE (V) Typical Performance Curves I 20 G(REF) IG(ACT) 50 t, TIME (µs) I 80 G(REF) IG(ACT) NOTE: Refer to Intersil Applications Notes AN7254 and AN7260 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 4-521 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS RFP2N20 Test Circuits and Waveforms VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 0.2µF VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G IG(REF) 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 13. GATE CHARGE TEST CIRCUIT IG(REF) 0 FIGURE 14. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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