RFP4N05, RFP4N06 June 1999 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.800Ω File Number 2880.2 • 4A, 50V and 60V • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Formerly developmental type TA09378. Ordering Information G PART NUMBER PACKAGE BRAND RFP4N05 TO-220AB RFP4N05 RFP4N06 TO-220AB RFP4N06 S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-523 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP4N05, RFP4N06 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP4N05 RFP4N06 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 50 60 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR 50 60 V Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 4 4 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 10 10 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 25 25 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 0.2 W/ oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperat6ure for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL MIN TYP MAX UNITS RFP4N05 50 - - V RFP4N06 60 - - V VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 25 µA VGS = ±20V, VDS = 0 - - ±100 nA Drain to Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(TH) Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS TEST CONDITIONS ID = 250µA, VGS = 0 Drain to Source On Resistance (Note 2) rDS(ON) ID = 4A, VGS = 10V, (Figures 6, 7) - - 0.800 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 4A, VGS = 10V - - 3.2 V ID ≈ 1A, VDD = 30V, RGS = 50Ω, RL = 29.2Ω, VGS = 10V, (Figure 10) - 6 15 ns - 14 30 ns td(OFF) - 16 30 ns tf - 14 25 ns - - 200 pF - - 85 pF - - 30 pF 5 oC/W Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse-Transfer Capacitance CRSS VGS = 0V, VDS = 25V f = 1MHz, (Figure 9) RθJC Thermal Resistance Junction to Case - - Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 1A - - 1.4 V ISD = 2A, dlSD/dt = 50A/µs - 100 - ns NOTES: 2. Pulsed test: width ≤ 300µs duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 4-524 RFP4N05, RFP4N06 Typical Performance Curves Unless Otherwise Specified 4.5 4.0 1.0 3.5 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 3.0 2.5 2.0 1.5 1.0 0.2 0.5 0 25 0 0 25 50 75 100 TC, CASE TEMPERATURE (oC) 125 150 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 25oC ID, DRAIN CURRENT (A) 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) RFP4N06 0.10 RFP4N05 ID, DRAIN CURRENT (A) 10 10 VGS = 10V VGS = 9V 4 VGS = 8V VGS = 7V VGS = 6V VGS = 5V 0 0 1 2 3 4 5 6 7 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS 1.6 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX -40oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) VGS = 20V 6 VDS, DRAIN TO SOURCE VOLTAGE (V) 3 150 8 2 100 VDS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 125 12 TJ = MAX RATED TC = 25oC 4 100 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 1 75 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 0.01 50 25oC 125oC 2 1 0 1.4 125oC 1.2 1.0 25oC 0.8 0.6 -40oC 0.4 0.2 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 4-525 10 0 1 2 3 ID, DRAIN CURRENT (A) 4 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 5 RFP4N05, RFP4N06 Typical Performance Curves Unless Otherwise Specified (Continued) 2 VGS = VDS ID = 250µA ID = 4A, VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX NORMALIZED GATE THRESHOLD VOLTAGE 1.5 1 1 0.5 0.5 0 50 0 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 10 60 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 160 120 CISS 80 COSS 40 CRSS VDD = BVDSS GATE SOURCE VOLTAGE RL = 15Ω IG(REF) = 0.095mA VGS = 10V 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS 45 30 15 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) VDD = BVDSS 8 6 4 DRAIN SOURCE VOLTAGE 2 0 0 0 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE C, CAPACITANCE (pF) 1.5 VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2 I 20 G(REF) IG(ACT) 60 t, TIME (µs) I 80 G(REF) IG(ACT) NOTE: Refer to Intersil Applications Notes AN7254 and AN7260 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 11. SWITCHING TIME TEST CIRCUIT 4-526 10% 50% 50% PULSE WIDTH FIGURE 12. RESISTIVE SWITCHING WAVEFORMS RFP4N05, RFP4N06 Test Circuits and Waveforms VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 0.2µF VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G IG(REF) 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 13. GATE CHARGE TEST CIRCUIT IG(REF) 0 FIGURE 14. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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