RFP8N20L Data Sheet July 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. • rDS(ON) = 0.600Ω • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power Dissipation Limited • Nanosecond Switching Speeds Formerly developmental type TA09534. • Linear Transfer Characteristics Ordering Information • High Input Impedence PART NUMBER RFP8N20L PACKAGE TO-220AB 1514.3 • Majority Carrier Device BRAND • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” RFP8N20L NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-278 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP8N20L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP8N20L UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 200 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 200 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 8 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 20 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS 10 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 W 0.48 W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0 Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA Zero Gate Voltage Drain Current Gate to Source Leakage Current IDSS IGSS MIN TYP MAX UNITS 200 - - V 1 - 2 V VDS = 0.8 x Rated BVDSS TC = 25oC - - 1 µA VDS = 0.8 x Rated BVDSS TC = 125oC - - 50 µA VGS = 10V, VDS = 0 - - 100 nA Drain to Source On-Voltage (Note 2) VDS(ON) ID = 8A, VGS = 5V - - 4.8 V Drain to Source On Resistance (Note 2) rDS(ON) ID = 4A, VGS = 5V - - 0.600 Ω ID = 4A, VDD = 50V, RG = 6.25 , VGS = 5V - 15 45 ns tr - 45 150 ns td(OFF) - 100 135 ns tf - 60 105 ns - - 900 pF Turn On Delay Time td(ON) Rise Time Turn Off Delay Time Fall Time Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1MHz Output Capacitance COSS - - 250 pF Reverse Transfer Capacitance CRSS - - 120 pF Thermal Resistance Junction to Case RθJC 2.083 oC/W RFP8N20L Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 4A - - 1.4 V ISD = 4A, dISD/dt = 100A/µs - 250 - ns NOTES: 2. Pulsed: pulse duration = 300µs max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 6-279 RFP8N20L Typical Performance Curves Unless Otherwise Specified 100 0.8 0.6 0.4 10 DC OPERATION 60W 1 0.2 0 0 50 100 0.1 150 TC, CASE TEMPERATURE (oC) 24 TC = 25oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 20 16 VGS = 10V 12 VGS = 5V VGS = 4V 8 VGS = 3V 4 VGS = 2V 0 0 1 3 4 5 6 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 10 100 VDS, DRAIN TO SOURCE (V) 16 VDS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 25oC 8 125oC 4 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.6 25oC 0.4 -40oC 0.2 5 10 ID, DRAIN CURRENT (A) 15 20 FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 6-280 ID = 4A, VGS = 5V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. 1.5 ON RESISTANCE NORMALIZED DRAIN TO SOURCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE(Ω) 2.0 125oC 0 5 FIGURE 4. TRANSFER CHARACTERISTICS 0.8 0 -40oC 125oC 0 7 VDS = 5V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. 1.0 -40oC 12 FIGURE 3. SATURATION CHARACTERISTICS 1.2 1000 FIGURE 2. FORWARD BIAS SAFE OPERATING AREA IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE IDS, DRAIN TO SOURCE CURRENT (A) TC = 25oC TJ = MAX RATED OPERATION IN THIS AREA LIMITED BY rDS(ON) 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 1.0 0.5 0 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) FIGURE 6. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 150 RFP8N20L Typical Performance Curves 700 1.1 600 1.0 0.9 0.8 0.7 CISS 500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 400 300 200 COSS 100 0.6 0.5 -50 0 50 100 TC, JUNCTION TEMPERATURE (oC) 0 150 FIGURE 7. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE CRSS 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 8. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE VDS, DRAIN TO SOURCE VOLTAGE (V) 200 10 BVDSS RL = 25 IG(REF) = 0.45mA VGS = 5V 150 8 6 VDD = BVDSS 100 50 VDD = BVDSS GATE SOURCE VOLTAGE 4 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 2 DRAIN SOURCE VOLTAGE 0 50 VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED GATE THRESHOLD VOLTAGE (V) 1.2 800 VDS = VGS ID = 250µA C, CAPACITANCE (pF) 1.3 Unless Otherwise Specified (Continued) 0 I 20 G(REF) IG(ACT) I 80 G(REF) IG(ACT) t, TIME (µs) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 9. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 10. SWITCHING TIME TEST CIRCUIT 6-281 10% 50% 50% PULSE WIDTH FIGURE 11. RESISTIVE SWITCHING WAVEFORMS RFP8N20L Test Circuits and Waveforms (Continued) VDS VDD RL Qg(TOT) VDS VGS = 10V VGS Qg(5) + VDD DUT VGS = 5V VGS - VGS = 1V IG(REF) 0 Qg(TH) IG(REF) 0 FIGURE 12. GATE CHARGE TEST CIRCUIT FIGURE 13. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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