IRF IR03H420

Data Sheet No. PD-6.077
IR03H420
HIGH VOLTAGE HALF-BRIDGE
Features
Product Summary
n Output Power MOSFETs in half-bridge configuration
n 500V Rated Breakdown Voltage
n High side gate drive designed for bootstrap
operation
n Matched propagation delay for both channels
n Independent high and low side output channels
n Undervoltage lockout
n 5V Schmitt-triggered input logic
n Half-Bridge output in phase with HIN
n Cross conduction prevention logic
n Internally set dead time
VIN (max)
500V
ton/off
130 ns
trr
270 ns
RDS(on)
3.0Ω
Ω
PD (TA = 25 ºC)
2.0W
Package
Description
The IR03H420 is a high voltage, high speed half
bridge. Proprietary HVIC and latch immune CMOS
technologies, along with the HEXFET® power
MOSFET technology, enable ruggedized single
package construction. The logic inputs are compatible
with standard CMOS or LSTTL outputs. The front end
features an independent high and low side driver in
phase with the logic compatible input signals. The
output
features two HEXFETs in a half-bridge
configuration with a high pulse current buffer stage
designed for minimum cross-conduction in the halfbridge. Propagation delays for the high and low side
power MOSFETs are matched to simplify use. The
device can operate up to 500 volts.
IR03H420
9506
Typical Connection
U P
T O
5 0 0 V
D C
B U S
V IN
IR 0 3 H 4 2 0
V
C C
H IN
L IN
1
6
V
2
3
C C
H IN
V
B
9
V IN
7
L IN
V O
T O
4
C O M
C O M
L O A D
IR03H420
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions.
Symbol
Parameter
Definition
Min.
Max.
VIN
VB
High Voltage Supply
High Side Floating Supply Absolute Voltage
-0.3
-0.3
500
525
VO
VIH/VIL
VCC
dv/dt
PD
RθJA
TJ
TS
TL
Half-Bridge Output Voltage
Logic Input Voltage (HIN & LIN)
Low Side and Logic Fixed Supply Voltage
Peak Diode Recovery dv/dt
Package Power Dissipation @ TA ≤ +25ºC
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
-0.3
-0.3
-0.3
-------55
-55
---
VIN + 0.3
VCC + 0.3
25
3.5
2.00
60
150
150
300
Units
V
V/ns
W
ºC/W
ºC
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used
within the recommended conditions.
Symbol
VB
VIN
VO
VCC
VIH/VIL
ID
TA
Note 1:
Parameter
Definition
High Side Floating Supply Absolute Voltage
High Voltage Supply
Half-Bridge Output Voltage
Low Side and Logic Fixed Supply Voltage
Logic Input Voltage (HIN & LIN)
Continuous Drain Current
(TA = 25ºC)
(TA = 85ºC)
Ambient Temperature
Min.
Max.
VO + 10
--(note 1)
10
0
-----40
VO + 20
500
500
20
VCC
0.7
0.5
125
Logic operational for VO of -5 to 500 V. Logic state held for VO of -5 to - VB.
Units
V
A
ºC
IR03H420
Dynamic Electrical Characteristics
VBIAS (VCC, VB) = 15V and TA = 25ºC unless otherwise specified. Switching time waveform definitions are
shown in figure 2.
Symbol
ton
toff
tr
tf
MT
DT
trr
Qrr
Parameter
Definition
TA = 25ºC
Min. Typ. Max. Units Test Conditions
Turn-On Propagation Delay (see note 2)
Turn-Off Propagation Delay (see note 2)
Turn-On Rise Time (see note 2)
Turn-Off Fall Time (see note 2)
Delay Matching, HS & LS Turn-On/Off
-----------
600
90
80
40
30
720
200
120
70
---
Deadtime, LS Turn-Off to HS Turn-On &
HS Turn-On to LS Turn-Off
Reverse Recovery Time (MOSFET Body Diode)
Reverse Recovery Charge (MOSFET Body Diode)
---
500
750
-----
260
0.7
-----
VS = 0 V
VS = 500 V
ns
µC
IF = 0.7 A
di/dt = 100A/µs
Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate
input voltage. This is shown as HO in figure 2.
Static Electrical Characteristics
VBIAS (VCC, VB) = 15V and TA = 25ºC unless otherwise specified. The Input voltage and current levels are
referenced to COM.
Symbol
Parameter
Definition
Supply Characteristics
VCCUV+ VCC Supply Undervoltage Positive Going
Threshold
VCCUV- VCC Supply Undervoltage Negative Going
Threshold
IQCC
Quiescent VCC Supply Current
IQBS
Quiescent VBS Supply Current
IOS
Offset Supply Leakage Current
Input Characteristics
VIH
Logic “1” Input Voltage
VIL
Logic “0” Input Voltage
IIN+
Logic “1” Input Bias Current
IINLogic “0” Input Bias Current
Output Characteristics
RDS(on) Static Drain-to-Source On-Resistance
VSD
Diode Forward Voltage
TA = 25ºC
Min. Typ. Max. Units
8.8
9.3
Test Conditions
9.8
V
7.5
8.2
8.6
-------
140
20
---
240
50
50
2.7
-------
----20
---
--0.8
40
1.0
µA
µA
-----
3.0
0.8
-----
Ω
V
µA
VB = VS = 500V
V
VCC = 10V to 20V
ID = 700mA
Tj = 150 ºC
IR03H420
Functional Block Diagram
VB
VIN
6
V CC
9
1
IRFC420
2
7
IR2103
HIN
___
LIN
VO
3
IRFC420
4
COM
Lead Definitions
Lead
Description
Symbol
VCC
Logic and internal gate drive supply voltage.
HIN
Logic input for high side Half Bridge output, in phase
LIN
Logic input for low side Half Bridge output, out of phase
VB
High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is
needed to feed from VCC to VB.
High voltage supply.
Half-Bridge output.
Logic and low side of Half-Bridge return.
VIN
VO
COM
Lead Assignments
1
2
3
4
VCC HIN LIN COM
6
7
9
VB
V0
VIN
9 Lead SIP w/o Leads 5 & 8
IR03H420
IR03H420
HIN
50%
50%
HIN
ton
toff
tr
___
LIN
90%
tf
90%
HO
10%
10%
V+
0
VO
VO
Figure 1. Input/Output Timing Diagram
___
LIN
HIN
Figure 2. Switching Time Waveform Definitions
HIN
50%
50%
LO
MT
LIN
50%
50%
HO
90%
HO
10%
10%
MT
90%
DT
LO
LO
HO
90%
10%
Figure 4. Deadtime Waveform Definitions
Figure 3. Delay Matching Waveform Definitions
IR03H420
Package Outline
WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • (310)322-3331 • FAX (310)322-3332 • TELEX 472-0403
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Sales Offices, Agents and Distributors in Major Cities Throughout the World.
© 1996 International Rectifier Printed in U.S.A. 3-96
Data and specifications subject to change without notice.