PD - 97359 IRFH5053PbF HEXFET® Power MOSFET Applications l 3 Phase Boost Converter Applications l Secondary Side Synchronous Rectification VDSS 100V RDS(on) max 18mΩ@VGS = 10V Qg 24nC Benefits l l l l l l l l Very low RDS(ON) at 10V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering S S S D D G D D PQFN Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 100 VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 7.4 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current 46 Power Dissipation 3.1 IDM PD @TA = 70°C TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range V 9.3 c g Power Dissipation g PD @TA = 25°C Units A 75 W 2.0 g W/°C 0.025 -55 to + 150 °C Thermal Resistance Parameter f RθJC Junction-to-Case RθJA Junction-to-Ambient g Typ. Max. ––– 1.6 ––– 40 Units °C/W Notes through are on page 9 www.irf.com 1 12/16/08 IRFH5053PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage 100 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.11 14.4 ––– 18 VGS(th) ∆VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient 3.0 ––– 3.7 -11 4.9 ––– IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 20 250 µA VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 nA VGS = 20V VGS = -20V gfs Qg Forward Transconductance Total Gate Charge 19 ––– ––– 24 ––– 36 S VDS = 50V, ID = 7.4A Qgs1 Qgs2 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 5.2 1.5 ––– ––– Qgd Qgodr Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 8.6 8.7 ––– ––– Output Charge ––– ––– 10.1 12 ––– ––– RG td(on) Gate Resistance Turn-On Delay Time ––– ––– 0.8 12 ––– ––– tr td(off) Rise Time Turn-Off Delay Time ––– ––– 7.5 18 ––– ––– tf Ciss Fall Time Input Capacitance ––– ––– 4.1 1510 ––– ––– Coss Crss Output Capacitance Reverse Transfer Capacitance ––– ––– 230 59 ––– ––– Qsw Qoss V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 9.3A e V VDS = VGS, ID = 100µA mV/°C nC nC VDS = 50V VGS = 10V ID = 7.4A See Fig.17 & 18 VDS = 16V, VGS = 0V Ω VDD = 50V, VGS = 10V ns ID = 7.4A RG=1.8Ω See Fig.15 VGS = 0V pF VDS = 50V ƒ = 1.0MHz Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current c Typ. ––– ––– d Max. 21 7.4 Units mJ A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD Min. Typ. Max. Units ––– ––– Conditions MOSFET symbol 2.8 A D showing the integral reverse G (Body Diode) Diode Forward Voltage ––– ––– 75 ––– ––– 1.3 V S p-n junction diode. TJ = 25°C, IS = 7.4A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge ––– ––– 31 210 47 320 ns nC TJ = 25°C, IF = 7.4A, VDD = 50V di/dt = 800A/µs See Fig.16 ton Forward Turn-On Time 2 c e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFH5053PbF 100 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V 1 0.1 4.5V 0.01 0.1 1 10 BOTTOM 1 4.5V ≤60µs PULSE WIDTH 0.1 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 1 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V T J = 150°C 10 T J = 25°C 1 VDS = 50V ≤60µs PULSE WIDTH 0.1 ID = 9.3A VGS = 10V 2.0 1.5 1.0 0.5 3 4 5 6 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 7 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRFH5053PbF 100000 VGS, Gate-to-Source Voltage (V) ID= 7.4A C oss = C ds + C gd 10000 C, Capacitance (pF) 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Ciss Coss 1000 Crss 100 12.0 VDS= 80V VDS= 50V 10.0 8.0 6.0 4.0 2.0 0.0 10 1 10 0 100 5 10 15 20 25 30 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) T A = 25°C 100 TJ = 150°C 10 OPERATION IN THIS AREA Tj = 150°C LIMITED BY R DS(on) Single Pulse T J = 25°C 1 1msec 10 100µsec 10msec DC 1 VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.2 0.01 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFH5053PbF 4.5 VGS(th) , Gate Threshold Voltage (V) 10 ID, Drain Current (A) 8 6 4 2 0 4.0 3.5 ID = 100µA 3.0 2.5 2.0 25 50 75 100 125 150 -75 -50 -25 T A , Ambient Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 10 0.20 0.10 0.05 1 τJ 0.02 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 τA τ1 τ2 τ2 τ3 τ3 τ4 τA τ4 Ci= τi/Ri Ci= τi/Ri 0.1 1E-005 0.0001 0.001 1.3862 0.000201 3.6808 0.013839 18.148 0.993400 16.804 37.6 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 τi (sec) Ri (°C/W) R4 R4 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 50 90 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH5053PbF ID = 9.3A 40 T J = 125°C 30 20 T J = 25°C 10 ID TOP 1.5A 1.9A BOTTOM 7.4A 80 70 60 50 40 30 20 10 0 4 6 8 10 12 14 16 25 50 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage V DS V GS VDS + V - DD IAS 20V 125 150 RD D.U.T. RG DRIVER D.U.T RG 100 Fig 13. Maximum Avalanche Energy vs. Drain Current 15V L 75 Starting T J , Junction Temperature (°C) + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 A 0.01Ω tp Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS I AS Fig 14b. Unclamped Inductive Waveforms 6 td(on) tr td(off) tf Fig 15b. Switching Time Waveforms www.irf.com IRFH5053PbF D.U.T Driver Gate Drive P.W. + - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit www.irf.com Fig 18. Gate Charge Waveform 7 IRFH5053PbF PQFN Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 DATE CODE XXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PART NUMBER XYWWX XXXXX MARKING CODE (Per Marking Spec.) PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code) TOP MARKING (LASER) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRFH5053PbF PQFN Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 7.4A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/08 www.irf.com 9