IRF IRLR8715CPBF

PD - 97107A
IRLR8715CPbF
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg
25V
9.4m:
6.9nC
D
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
G
D
S
D-Pak
IRLR8715CPbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Max.
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
25
± 20
51
V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
36
A
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
c
Maximum Power Dissipation
PD @TC = 100°C
Maximum Power Dissipation
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
f
200
g
g
44
W
22
0.29
-55 to + 175
Soldering Temperature, for 10 seconds
W/°C
°C
300 (1.6mm from case)
Thermal Resistance
Parameter
h
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
h
gh
Typ.
Max.
–––
3.4
–––
50
–––
110
Units
°C/W
Notes  through † are on page 10
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1
9/18/06
IRLR8715CPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
25
–––
–––
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
–––
17
–––
–––
7.5
9.4
–––
11.8
14.8
V
mV/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 21A
VGS = 4.5V, ID = 17A
VGS(th)
Gate Threshold Voltage
1.35
1.9
2.35
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-7.0
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
IGSS
Conditions
VGS = 0V, ID = 250µA
VDS = VGS, ID = 25µA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Forward Transconductance
46
–––
–––
Qg
Total Gate Charge
–––
6.9
10
Qgs1
Pre-Vth Gate-to-Source Charge
–––
1.6
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.2
–––
Qgd
Gate-to-Drain Charge
–––
2.5
–––
ID = 17A
Qgodr
See Fig.16
Gate Charge Overdrive
–––
1.6
–––
Switch Charge (Qgs2 + Qgd)
–––
3.7
–––
S
VDS = 13V, ID = 17A
gfs
Qsw
e
e
VDS = 13V
nC
VGS = 4.5V
VDS = 10V, VGS = 0V
Qoss
Output Charge
–––
3.2
–––
nC
RG
Gate Resistance
–––
2.2
3.8
Ω
td(on)
Turn-On Delay Time
–––
7.2
–––
VDD = 13V, VGS = 4.5V
tr
Rise Time
–––
32
–––
ID = 17A
td(off)
Turn-Off Delay Time
–––
7.5
–––
tf
Fall Time
–––
3.9
–––
Ciss
Input Capacitance
–––
830
–––
Coss
Output Capacitance
–––
220
–––
Crss
Reverse Transfer Capacitance
–––
120
–––
e
ns
Clamped Inductive Load
pF
VDS = 13V
VGS = 0V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
c
d
c
Typ.
Max.
Units
–––
27
mJ
–––
17
A
–––
4.4
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
–––
–––
51
f
(Body Diode)
Conditions
MOSFET symbol
A
showing the
ISM
Pulsed Source Current
–––
–––
200
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.0
V
p-n junction diode.
TJ = 25°C, IS = 17A, VGS = 0V
trr
Reverse Recovery Time
–––
7.8
12
ns
TJ = 25°C, IF = 17A, VDD = 13V
Qrr
Reverse Recovery Charge
–––
4.9
7.4
nC
di/dt = 300A/µs
ton
Forward Turn-On Time
2
c
integral reverse
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRLR8715CPbF
1000
1000
100
BOTTOM
TOP
10
1
2.7V
≤ 60µs PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.7V
100
BOTTOM
10
2.7V
≤ 60µs PULSE WIDTH
Tj = 175°C
0.1
1
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current (A)
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.7V
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 15V
≤ 60µs PULSE WIDTH
0.1
0.0
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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ID = 21A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLR8715CPbF
10000
12
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance (pF)
Coss = Cds + Cgd
1000
Ciss
Coss
Crss
10
VDS = 20V
8
VDS = 5.0V
VDS = 13V
6
4
2
0
100
1
ID= 17A
10
0
100
2
VDS , Drain-to-Source Voltage (V)
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
100
TJ = 175°C
10
6
8
10
12
14
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 25°C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100µsec
1msec
10
1
VGS = 0V
10msec
TC= 25°C
TJ= 175°C
Single Pulse
0.1
1
0.2
0.6
1.0
1.4
1.8
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
4
QG Total Gate Charge (nC)
2.2
0.1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLR8715CPbF
2.4
60
VGS(th) Gate threshold Voltage (V)
LIMITED BY PACKAGE
ID , Drain Current (A)
50
40
30
20
10
2.0
1.2
0.8
0
25
50
75
100
125
150
ID = 25µA
1.6
0.4
175
-75
-50 -25
TC , Case Temperature (°C)
0
25
50
75
100 125 150 175
TJ, Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
Thermal Response ( Z thJC )
10
D = 0.50
1
0.20
R1
R1
0.10
τJ
0.05
0.02
0.01
0.1
τJ
τ1
R2
R2
R3
R3
R4
R4
τC
τ1
τ2
τ2
τ3
τ3
τ4
τ4
Ci= τi/Ri
Ci i/Ri
τ
Ri (°C/W) τι (sec)
0.137444 0.00001
0.519232 0.00002
1.553532 0.00034
1.189792 0.001289
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
RDS (on), Drain-to -Source On Resistance (mΩ)
IRLR8715CPbF
26
120
24
EAS, Single Pulse Avalanche Energy (mJ)
ID = 21A
22
20
18
16
14
TJ = 125°C
12
10
TJ = 25°C
8
6
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
ID
4.1A
6.7A
BOTTOM 17A
TOP
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V(BR)DSS
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
VGS
20V
tp
tp
A
0.01Ω
I AS
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
LD
VDS
+
VDS
90%
VDD D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
10%
VGS
td(on)
Fig 15a. Switching Time Test Circuit
6
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
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IRLR8715CPbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1 Qgs2
Driver Gate Drive
P.W.
+
ƒ
+
‚
„
Reverse
Recovery
Current
VDD
P.W.
Period
D.U.T. ISD Waveform
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
*

•
•
•
•
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
RG
Qgodr
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
D.U.T
Qgd
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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IRLR8715CPbF
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120
WIT H AS S EMBLY
LOT CODE 1234
AS S EMBLED ON WW 16, 2001
IN T HE AS S EMBLY LINE "A"
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
Note: "P" in as sembly line pos ition
indicates "Lead-Free"
IRFR120
116A
12
34
AS S EMBLY
LOT CODE
DAT E CODE
YEAR 1 = 2001
WEEK 16
LINE A
"P" in ass embly line position indicates
"Lead-Free" qualification to the cons umer-level
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRFR120
12
AS S EMBLY
LOT CODE
8
34
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
P = DES IGNAT ES LEAD-FREE
PRODUCT QUALIFIED T O T HE
CONS UMER LEVEL (OPT IONAL)
YEAR 1 = 2001
WEEK 16
A = AS S EMBLY S IT E CODE
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IRLR8715CPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.19mH, RG = 25Ω,
IAS = 17A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 42A.
… When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
† Rθ is measured at TJ approximately at 90°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/06
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