PD - 97390 IRLB8721PbF HEXFET® Power MOSFET Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free VDSS RDS(on) max Qg (typ.) 30V 8.7m @VGS = 10V 7.6nC : D G D S TO-220AB IRLB8721PbF G D S Gate Drain Source Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 62 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 44 IDM Pulsed Drain Current 250 PD @TC = 25°C Maximum Power Dissipation PD @TC = 100°C Maximum Power Dissipation TJ TSTG c g g Units V A 65 W 33 Linear Derating Factor 0.43 Operating Junction and -55 to + 175 W/°C Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case) 10lb in (1.1N m) x °C x Thermal Resistance Typ. Max. ––– 2.3 Case-to-Sink, Flat Greased Surface 0.5 ––– Junction-to-Ambient ––– 62 RθJC Junction-to-Case RθCS RθJA Parameter g f Units °C/W Notes through are on page 9 www.irf.com 1 4/22/09 IRLB8721PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 21 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 6.5 8.7 ––– 13.1 16 VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -7.0 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 35 ––– ––– Qg Total Gate Charge ––– 7.6 13 V Conditions VGS = 0V, ID = 250μA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 31A VGS = 4.5V, ID e = 25A e VDS = VGS, ID = 25μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V S VDS = 15V, ID = 25A VDS = 15V Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.9 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.2 ––– Qgd Gate-to-Drain Charge ––– 3.4 ––– ID = 25A Qgodr Gate Charge Overdrive ––– 2.0 ––– See Fig. 16 nC VGS = 4.5V Qsw Switch Charge (Qgs2 + Qgd) ––– 4.6 ––– Qoss Output Charge ––– 7.9 ––– nC RG Gate Resistance ––– 2.3 3.8 Ω td(on) Turn-On Delay Time ––– 9.1 ––– VDD = 15V, VGS = 4.5V tr Rise Time ––– 93 ––– td(off) Turn-Off Delay Time ––– 9.0 ––– ID = 25A RG = 1.8Ω tf Fall Time ––– 17 ––– Ciss Input Capacitance ––– 1077 ––– Coss Output Capacitance ––– 360 ––– Crss Reverse Transfer Capacitance ––– 110 ––– ns VDS = 15V, VGS = 0V e See Fig. 14 VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units ––– 98 mJ ––– 25 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol IS Continuous Source Current ––– ––– 62 ISM (Body Diode) Pulsed Source Current ––– ––– 250 VSD (Body Diode) Diode Forward Voltage ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 25A, VGS = 0V trr Reverse Recovery Time ––– 16 24 ns TJ = 25°C, IF = 25A, VDD = 15V Qrr Reverse Recovery Charge ––– 14 21 nC di/dt = 200A/μs 2 c A showing the integral reverse e e www.irf.com IRLB8721PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V 10 3.0V ≤ 60μs PULSE WIDTH Tj = 25°C 100 BOTTOM 10 3.0V ≤ 60μs PULSE WIDTH Tj = 175°C 1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 10V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V 100 10 TJ = 175°C TJ = 25°C 1 VDS = 15V ≤ 60μs PULSE WIDTH 0.1 0.0 2.0 4.0 6.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 8.0 ID = 25A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRLB8721PbF 14 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10000 Coss = Cds + Cgd Ciss 1000 Coss Crss 100 ID= 25A VDS= 24V VDS= 15V 12 10 8 6 4 2 0 10 1 10 0 100 4 16 20 24 28 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 12 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100 TJ = 175°C 10 TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 100μsec 100 1msec 10msec 10 1 VGS = 0V TC= 25°C TJ = 175°C Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 8 1.8 0.1 1 10 100 VDS, Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLB8721PbF 2.5 VGS(th) Gate threshold Voltage (V) ID , Drain Current (A) 80 60 40 20 ID = 1.0mA ID = 250μA ID = 25μA 2.0 1.5 1.0 0 0.5 25 50 75 100 125 150 175 -75 -50 -25 TC , CaseTemperature (°C) 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.1 τJ 0.01 R1 R1 τJ τ1 R2 R2 R4 R4 τC τ1 τ2 τ2 Ci= τi/Ri Ci i/Ri 0.01 R3 R3 SINGLE PULSE ( THERMAL RESPONSE ) τ3 τ3 τ4 τ4 τ Ri (°C/W) 0.003454 0.17246 0.786312 1.368218 τι (sec) 13.68748 7.21E-05 0.001227 0.007178 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 32 EAS, Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (mΩ) IRLB8721PbF ID = 31A 28 24 20 16 TJ = 125°C 12 8 TJ = 25°C 4 2 4 6 400 I D 5.4A 10A BOTTOM 25A TOP 300 200 100 0 8 10 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13a. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V L VDS DRIVER D.U.T RG 20V VGS tp + V - DD IAS A 0.01Ω tp I AS Fig 13b. Unclamped Inductive Test Circuit VDS VGS RG RD VDS 90% D.U.T. + -V DD V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 14a. Switching Time Test Circuit 6 Fig 13c. Unclamped Inductive Waveforms 10% VGS td(on) tr t d(off) tf Fig 14b. Switching Time Waveforms www.irf.com IRLB8721PbF D.U.T Driver Gate Drive P.W. + + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D= Period + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds 50KΩ 12V Vgs .2μF .3μF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgodr Qgd Qgs2 Qgs1 Current Sampling Resistors Fig 16a. Gate Charge Test Circuit www.irf.com Fig 16b. Gate Charge Waveform 7 IRLB8721PbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRLB8721PbF TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF 1010 LOT CODE 1789 AS SEMBLED ON WW 19, 2000 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead - Free" INTERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.32mH, RG = 25Ω, IAS = 25A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2009 www.irf.com 9