BSV 236SP Preliminary data OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS(on) 175 mΩ • Super Logic Level (2.5 V rated) ID -1.5 A • 150°C operating temperature SOT-363 4 • Avalanche rated 5 6 • dv/dt rated 2 3 1 VPS05604 Type Package Ordering Code Marking BSV 236SP SOT-363 Q67042-S4070 X2s Drain pin 1,2, 5,6 Gate pin 3 Source pin 4 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -1.5 TA=70°C -1.2 ID puls -6 EAS 9.5 mJ dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation Ptot 0.56 W -55... +150 °C Pulsed drain current TA=25°C Avalanche energy, single pulse ID =-1.5 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-1.5A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2001-12-21 BSV 236SP Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 90 - - 220 - - 110 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 -0.9 -1.2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS ID =-8µA Zero gate voltage drain current µA IDSS VDS =-20V, VGS =0, Tj =25°C - -0.1 -1 VDS =-20V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 193 285 mΩ RDS(on) - 131 175 Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-0.8A Drain-source on-state resistance VGS =-4.5, ID =-1.5A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Page 2 2001-12-21 BSV 236SP Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 2.2 4.4 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-1.2A Input capacitance Ciss VGS =0, VDS =-15V, - 228 - Output capacitance Coss f=1MHz - 92 - Reverse transfer capacitance Crss - 75 - Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 5.7 8.5 Rise time tr ID =-1A, RG=6Ω - 8.5 12.7 Turn-off delay time td(off) - 14.1 21.1 Fall time tf - 12.2 18.3 - -0.4 -0.6 - -1.8 -2.7 - -3.8 -5.7 V(plateau) VDD =-10V, ID =-1.5A - -1.6 - IS - - - - -6 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-10V, ID =-1.5A VDD =-10V, ID =-1.5A, nC VGS =0 to -4.5V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C -0.11 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, |IF | = |ID | - 0.88 1.3 V Reverse recovery time trr VR =-10V, |IF | = |lD |, - 16.4 20.5 ns Reverse recovery charge Qrr diF /dt=100A/µs - 3.4 4.3 nC Page 3 2001-12-21 BSV 236SP Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 4.5 V 1.3 BSV 236SP -1.6 BSV 236SP W A 1.1 1 -1.2 ID Ptot 0.9 0.8 -1 0.7 -0.8 0.6 0.5 -0.6 0.4 -0.4 0.3 0.2 -0.2 0.1 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 10 2 D 1 BSV 236SP DS /I tp = 45.0µs BSV 236SP K/W V 100 µs on ) = A 160 TA 3 Safe operating area -10 °C R DS ( 10 1 Z thJS 1 ms ID -10 0 10 0 10 ms D = 0.50 10 -10 -1 0.20 -1 0.10 0.05 10 -2 single pulse 0.02 0.01 DC -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2001-12-21 BSV 236SP Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 0.5 12 Vgs = -3.4V Vgs = -2V A Ω RDS(on) Vgs = -3V 8 - ID Vgs = - 2.4V Vgs= - 2.6V Vgs = - 3V Vgs= - 3.4V Vgs = - 3.8V Vgs = - 4.5V Vgs= - 5V Vgs = - 6V Vgs = -3.8V Vgs = -4.5V Vgs = -6V 0.3 Vgs = -2.6V 6 0.2 Vgs = -2.4V 4 Vgs = -2V 0.1 2 Vgs = -1.8V 0 0 1 2 3 4 5 6 7 8 V 0 0 10 2 4 6 8 11 A - ID - V DS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: tp = 80 µs 5 8 A S 4 6 g fs - ID 3.5 3 2.5 5 4 2 3 1.5 2 1 1 0.5 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 V 2.5 - V GS Page 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 A 5 - ID 2001-12-21 BSV 236SP Preliminary data 9 Drain-source on-resistance 10 Gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -1.5 A, VGS = -4.5 V parameter: VGS = VDS , ID = -8 µA 240 1.4 V - VGS(th) RDS(on) mΩ 200 180 98% 160 98% 1 0.8 typ. 140 0.6 typ. 120 2% 0.4 100 80 -60 -20 20 60 100 0.2 -60 °C 160 Tj -20 20 60 100 °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 3 -10 1 BSV 236SP A pF Ciss C IF -10 0 Coss 10 2 Crss -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 V 20 - VDS -10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2001-12-21 BSV 236SP Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -1.5 A |VGS| = f (QGate ) VDD = -10 V, RGS = 25 Ω parameter: ID = -1.5 A pulsed 10 12 V mJ 10 8 - VGS E AS 9 7 6 8 7 0.2 VDS max. 0.5 VDS max. 5 6 0.8 VDS max. 4 5 4 3 3 2 2 1 1 0 25 50 75 100 150 °C Tj 0 0 1 2 3 4 5 6 8 nC |QGate| 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSV 236SP V V (BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Page 7 2001-12-21 Preliminary data BSV 236SP Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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