INFINEON BSA223SP

BSA 223SP
Preliminary data
OptiMOS -P Small-Signal-Transistor
Feature
Product Summary
• P-Channel
VDS
-20
V
• Enhancement mode
R DS(on)
1.2
Ω
• Super Logic Level (2.5 V rated)
ID
-0.39
A
• 150°C operating temperature
SC-75
• Avalanche rated
• dv/dt rated
Drain
pin 3
Type
BSA 223SP
Package
SC-75
Ordering Code
Q67042-S4176
Gate
pin1
Marking
Source
pin 2
BPs
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
A
TA=25°C
-0.39
TA=70°C
-0.31
Pulsed drain current
ID puls
Unit
-1.56
TA=25°C
EAS
1.4
mJ
dv/dt
-6
kV/µs
Gate source voltage
VGS
±12
V
Power dissipation
Ptot
0.25
W
-55... +150
°C
Avalanche energy, single pulse
ID=-0.39 A , VDD=-10V, RGS=25Ω
Reverse diode dv/dt
IS=-0.39A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C
TA=25°C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
55/150/56
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2002-08-26
BSA 223SP
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
RthJS
-
-
150
Thermal resistance, junction - ambient, leaded
RthJA
-
-
500
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
-20
-
-
VGS(th)
-0.6
-0.9
-1.2
Static Characteristics
Drain-source breakdown voltage
V
V GS=0, I D=-250µA
Gate threshold voltage, VGS = V DS
ID=-1.5µA
Zero gate voltage drain current
µA
IDSS
V DS=-20V, VGS=0, Tj=25°C
-
-0.1
-1
V DS=-20V, VGS=0, Tj=150°C
-
-10
-100
IGSS
-
-10
-100
nA
RDS(on)
-
1.27
2.1
Ω
RDS(on)
-
0.7
1.2
Gate-source leakage current
V GS=-12V, VDS=0
Drain-source on-state resistance
V GS=-2.5V, I D=-0.29A
Drain-source on-state resistance
V GS=-4.5, ID=-0.39A
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2002-08-26
BSA 223SP
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
min.
Unit
typ.
max.
0.7
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS ≥2*ID *RDS(on)max , 0.35
ID =-0.31A
Input capacitance
Ciss
VGS =0, VDS =-15V,
-
45
56
Output capacitance
Coss
f=1MHz
-
21
26
Reverse transfer capacitance
Crss
-
17
22
Turn-on delay time
td(on)
VDD =-10V, VGS =-4.5V,
-
3.8
5.7
Rise time
tr
ID =-0.39A, RG =6Ω
-
5
7.5
Turn-off delay time
td(off)
-
5.1
7.6
Fall time
tf
-
3.2
4.8
-
-0.04
-0.05
-
-0.4
-0.5
-
-0.5
-0.62
V(plateau) VDD =-10V, ID =-0.39A
-
-2.2
-2.7
IS
-
-
-0.39 A
-
-
-1.56
-1.33 V
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =-10V, ID =-0.39A
VDD =-10V, ID =-0.39A,
nC
VGS =0 to -4.5V
Gate plateau voltage
V
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage
VSD
VGS =0, IF =-0.39
-
-1
Reverse recovery time
trr
VR =-10V, |IF | = |lD |,
-
7.6
9.5
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
1.1
1.4
nC
Page 3
2002-08-26
BSA 223SP
Preliminary data
1 Power dissipation
2 Drain current
Ptot = f (TA)
ID = f (T A)
parameter: |VGS|≥ 4.5 V
BSA 223SP
0.55
BSA 223SP
-0.42
A
W
-0.36
0.45
-0.32
-0.28
0.35
ID
P tot
0.4
-0.24
0.3
-0.2
0.25
-0.16
0.2
0.15
-0.12
0.1
-0.08
0.05
-0.04
0
0
20
40
60
80
100
120
°C
0
160
0
20
40
60
80
100
120
TA
160
TA
3 Safe operating area
4 Transient thermal impedance
ID = f ( VDS )
ZthJA = f (tp)
parameter : D = 0 , TA = 25 °C
parameter : D = t p/T
-10
°C
1 BSA 223SP
10
3 BSA 223SP
K/W
A
10
2
10
1
10
0
DS
0
R
DS
(on
)
=
ID
V
-10
Z thJA
/I
D
t = 180.0µs
p
1 ms
D = 0.50
0.20
-10
-1
10
-1
0.10
0.05
10 ms
0.02
10
-2
0.01
single pulse
-10
-2
-10
-1
-10
0
DC
1
-10
V
-10
2
VDS
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
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2002-08-26
BSA 223SP
Preliminary data
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS)
RDS(on) = f (ID)
parameter: Tj =25°C
parameter: VGS, Tj = 25 °C
0.7
4
3V
4V
A
4.5V
6V
7V
0.5 8V
10V
R DS(on)
Ω
-I D
2.5V
2.2V
2.5V
3V
4V
4.5V
6V
7V
8V
10V
3
2.5
0.4
2
2.2V
0.3
1.5
0.2
1
0.1
0.5
0
0
0.3
0.6
0
V
0.9
1.5
0
0.1
0.2
0.3
0.4
0.5
A
-VDS
0.7
-ID
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); |VDS|≥ 2 x |I D| x RDS(on)max
g fs = f(I D)
parameter: Tj = 25 °C
parameter: Tj = 25 °C
0.7
1.1
S
A
0.9
0.8
gfs
-ID
0.5
0.4
0.7
0.6
0.5
0.3
0.4
0.2
0.3
0.2
0.1
0.1
0
0
0.5
1
1.5
2
V
0
3
0
-VGS
0.1
0.2
0.3
0.4
0.5
A
0.7
-ID
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2002-08-26
BSA 223SP
Preliminary data
9 Drain-source on-resistance
10 Typ. gate threshold voltage
RDS(on) = f(Tj)
VGS(th) = f (T j)
parameter: ID = -0.39 A, VGS = -4.5 V
parameter: VGS = VDS
1.6
1.6
V
98%
- V GS(th)
R DS(on)
Ω
1.2
1
98%
1.2
1
typ.
typ.
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
-60
-20
20
60
°C
100
2%
0
-60
160
-20
20
60
100
°C
160
Tj
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (V DS)
IF = f (V SD)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
parameter: Tj = 25 °C
10
2
-10
1 BSA 223SP
A
Ciss
0
C
IF
-10
pF
Coss
-10
-1
T j = 25 °C typ
T j = 150 °C typ
C rss
T j = 25 °C (98%)
T j = 150 °C (98%)
10
1
0
-10
2
4
6
8
10
12
V
15
-2
0
-VDS
-0.4
-0.8
-1.2
-1.6
-2
-2.4 V
-3
VSD
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2002-08-26
BSA 223SP
Preliminary data
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (T j), par.: ID = -0.39 A
VGS = f (QGate)
VDD = -10 V, RGS = 25 Ω
parameter: ID = -0.39 A pulsed, T j = 25 °C
1.4
BSA 223SP
-16
V
mJ
-12
E AS
V GS
1
-10
0.8
-8
20%
0.6
-6 50%
80%
0.4
-4
0.2
-2
0
20
40
60
80
100
120
°C
0
160
Tj
0
0.2
0.4
0.6
0.8
1
nC
1.3
|QGate |
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-24.5
BSA 223SP
V
V(BR)DSS
-23.5
-23
-22.5
-22
-21.5
-21
-20.5
-20
-19.5
-19
-18.5
-18
-60
-20
20
60
100
°C
180
Tj
Page 7
2002-08-26
Preliminary data
BSA 223SP
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
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regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
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written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
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2002-08-26