BSA 223SP Preliminary data OptiMOS -P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode R DS(on) 1.2 Ω • Super Logic Level (2.5 V rated) ID -0.39 A • 150°C operating temperature SC-75 • Avalanche rated • dv/dt rated Drain pin 3 Type BSA 223SP Package SC-75 Ordering Code Q67042-S4176 Gate pin1 Marking Source pin 2 BPs Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C -0.39 TA=70°C -0.31 Pulsed drain current ID puls Unit -1.56 TA=25°C EAS 1.4 mJ dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation Ptot 0.25 W -55... +150 °C Avalanche energy, single pulse ID=-0.39 A , VDD=-10V, RGS=25Ω Reverse diode dv/dt IS=-0.39A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2002-08-26 BSA 223SP Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 150 Thermal resistance, junction - ambient, leaded RthJA - - 500 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 -0.9 -1.2 Static Characteristics Drain-source breakdown voltage V V GS=0, I D=-250µA Gate threshold voltage, VGS = V DS ID=-1.5µA Zero gate voltage drain current µA IDSS V DS=-20V, VGS=0, Tj=25°C - -0.1 -1 V DS=-20V, VGS=0, Tj=150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 1.27 2.1 Ω RDS(on) - 0.7 1.2 Gate-source leakage current V GS=-12V, VDS=0 Drain-source on-state resistance V GS=-2.5V, I D=-0.29A Drain-source on-state resistance V GS=-4.5, ID=-0.39A Page 2 2002-08-26 BSA 223SP Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values min. Unit typ. max. 0.7 - S pF Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max , 0.35 ID =-0.31A Input capacitance Ciss VGS =0, VDS =-15V, - 45 56 Output capacitance Coss f=1MHz - 21 26 Reverse transfer capacitance Crss - 17 22 Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 3.8 5.7 Rise time tr ID =-0.39A, RG =6Ω - 5 7.5 Turn-off delay time td(off) - 5.1 7.6 Fall time tf - 3.2 4.8 - -0.04 -0.05 - -0.4 -0.5 - -0.5 -0.62 V(plateau) VDD =-10V, ID =-0.39A - -2.2 -2.7 IS - - -0.39 A - - -1.56 -1.33 V ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-10V, ID =-0.39A VDD =-10V, ID =-0.39A, nC VGS =0 to -4.5V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, IF =-0.39 - -1 Reverse recovery time trr VR =-10V, |IF | = |lD |, - 7.6 9.5 ns Reverse recovery charge Qrr diF /dt=100A/µs - 1.1 1.4 nC Page 3 2002-08-26 BSA 223SP Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (T A) parameter: |VGS|≥ 4.5 V BSA 223SP 0.55 BSA 223SP -0.42 A W -0.36 0.45 -0.32 -0.28 0.35 ID P tot 0.4 -0.24 0.3 -0.2 0.25 -0.16 0.2 0.15 -0.12 0.1 -0.08 0.05 -0.04 0 0 20 40 60 80 100 120 °C 0 160 0 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp) parameter : D = 0 , TA = 25 °C parameter : D = t p/T -10 °C 1 BSA 223SP 10 3 BSA 223SP K/W A 10 2 10 1 10 0 DS 0 R DS (on ) = ID V -10 Z thJA /I D t = 180.0µs p 1 ms D = 0.50 0.20 -10 -1 10 -1 0.10 0.05 10 ms 0.02 10 -2 0.01 single pulse -10 -2 -10 -1 -10 0 DC 1 -10 V -10 2 VDS 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2002-08-26 BSA 223SP Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj =25°C parameter: VGS, Tj = 25 °C 0.7 4 3V 4V A 4.5V 6V 7V 0.5 8V 10V R DS(on) Ω -I D 2.5V 2.2V 2.5V 3V 4V 4.5V 6V 7V 8V 10V 3 2.5 0.4 2 2.2V 0.3 1.5 0.2 1 0.1 0.5 0 0 0.3 0.6 0 V 0.9 1.5 0 0.1 0.2 0.3 0.4 0.5 A -VDS 0.7 -ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS|≥ 2 x |I D| x RDS(on)max g fs = f(I D) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.7 1.1 S A 0.9 0.8 gfs -ID 0.5 0.4 0.7 0.6 0.5 0.3 0.4 0.2 0.3 0.2 0.1 0.1 0 0 0.5 1 1.5 2 V 0 3 0 -VGS 0.1 0.2 0.3 0.4 0.5 A 0.7 -ID Page 5 2002-08-26 BSA 223SP Preliminary data 9 Drain-source on-resistance 10 Typ. gate threshold voltage RDS(on) = f(Tj) VGS(th) = f (T j) parameter: ID = -0.39 A, VGS = -4.5 V parameter: VGS = VDS 1.6 1.6 V 98% - V GS(th) R DS(on) Ω 1.2 1 98% 1.2 1 typ. typ. 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 -60 -20 20 60 °C 100 2% 0 -60 160 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0, f=1 MHz, Tj = 25 °C parameter: Tj = 25 °C 10 2 -10 1 BSA 223SP A Ciss 0 C IF -10 pF Coss -10 -1 T j = 25 °C typ T j = 150 °C typ C rss T j = 25 °C (98%) T j = 150 °C (98%) 10 1 0 -10 2 4 6 8 10 12 V 15 -2 0 -VDS -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2002-08-26 BSA 223SP Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (T j), par.: ID = -0.39 A VGS = f (QGate) VDD = -10 V, RGS = 25 Ω parameter: ID = -0.39 A pulsed, T j = 25 °C 1.4 BSA 223SP -16 V mJ -12 E AS V GS 1 -10 0.8 -8 20% 0.6 -6 50% 80% 0.4 -4 0.2 -2 0 20 40 60 80 100 120 °C 0 160 Tj 0 0.2 0.4 0.6 0.8 1 nC 1.3 |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) -24.5 BSA 223SP V V(BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Page 7 2002-08-26 Preliminary data BSA 223SP Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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