Preliminary data SPI21N10 SPP21N10,SPB21N10 SIPMOSī Power-Transistor Product Summary Feature 100 VDS N-Channel Enhancement mode 175°C operating temperature Avalanche rated P-TO262-3-1 V R DS(on) 80 m ID 21 A P-TO263-3-2 P-TO220-3-1 dv/dt rated Type SPP21N10 Package P-TO220-3-1 Ordering Code Q67042-S4116 Marking SPB21N10 P-TO263-3-2 Q67042-S4102 21N10 SPI21N10 P-TO262-3-1 Q67042-S4117 21N10 21N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 21 TC=100°C 15.0 ID puls 84 EAS 130 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 90 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse ID =21 A , VDD =25V, RGS =25 Reverse diode dv/dt mJ kV/µs IS =21A, VDS =80V, di/dt=200A/µs, Tjmax =175°C TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2002-01-31 Preliminary data SPI21N10 SPP21N10,SPB21N10 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.7 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm 2 cooling area F) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID = 44 µA Zero gate voltage drain current µA IDSS VDS =100V, VGS=0V, Tj =25°C - 0.01 1 VDS =100V, VGS=0V, Tj =125°C - 1 100 IGSS - 1 100 nA RDS(on) - 65 80 m Gate-source leakage current VGS =20V, VDS =0V Drain-source on-state resistance VGS =10V, ID =15.0A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-31 SPI21N10 SPP21N10,SPB21N10 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 6.5 12.4 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID*RDS(on)max , ID =15.0A Input capacitance Ciss VGS =0V, VDS=25V, - 650 865 Output capacitance Coss f=1MHz - 140 186 Reverse transfer capacitance Crss - 80 120 Turn-on delay time td(on) VDD =50V, VGS =10V, - 10 15 Rise time tr ID =21A, RG =13 - 56 84 Turn-off delay time td(off) - 37 55 Fall time tf - 23 35 - 3.9 5.2 - 15.5 23.3 - 28.9 38.4 V(plateau) VDD =80V, ID=21A - 6.2 - V IS - - 21 A - - 84 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =80V, ID =21A VDD =80V, ID =21A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =21A - 0.94 1.25 V Reverse recovery time trr VR =50V, IF =lS , - 65 81.5 ns Reverse recovery charge Qrr diF /dt=100A/µs - 153 192 nC Page 3 2002-01-31 SPI21N10 SPP21N10,SPB21N10 Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) parameter: VGS 10 V 100 SPP21N10 24 SPP21N10 A W 20 80 18 16 ID Ptot 70 60 14 50 12 40 10 8 30 6 20 4 10 0 0 2 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C 10 2 SPP21N10 parameter : D = tp /T 10 1 tp = 6.8µs SPP21N10 K/W 10 µs A 10 0 DS (on ) ID =V DS 10 1 Z thJC /I D 100 µs 10 -1 R 1 ms D = 0.50 10 ms 10 10 -2 0.20 0 0.10 DC 0.05 10 -3 0.02 single pulse 0.01 10 -1 -1 10 10 0 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2002-01-31 SPI21N10 SPP21N10,SPB21N10 Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 50 e 260 m d VGS[V]= a= 5.6 b= 6.0 c= 7.0 d= 8.0 e= 10.0 220 200 RDS(on) A c ID d c b a 30 180 160 140 120 20 100 b e 80 a 60 10 VGS[V]= a= 5.6 b= 6.0 40 20 0 0 5 10 0 0 20 V 5 10 15 c= 7.0 d= 8.0 e= 10.0 20 25 30 35 40 A 50 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID ); Tj=25°C parameter: gfs 30 14 S A 12 11 10 ID g fs 20 9 8 15 7 6 5 10 4 3 5 2 1 0 2 3 4 5 6 0 0 8 V 4 8 12 16 24 A ID VGS Page 5 2002-01-31 SPI21N10 SPP21N10,SPB21N10 Preliminary data 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 15.0 A, VGS = 10 V parameter: VGS = VDS 340 SPP21N10 4 m V VGS(th) RDS(on) 280 240 200 ID =0.25mA 3 160 2.5 120 98% 80 typ 2 ID =44µA 40 0 -60 -20 20 60 100 140 °C 1.5 -65 200 -35 -5 25 55 85 115 Tj °C 175 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 2 pF SPP21N10 A Ciss 10 1 C IF 10 3 Coss 10 2 10 0 Tj = 25 °C typ Crss Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 25 30 V 40 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2002-01-31 SPI21N10 SPP21N10,SPB21N10 Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 21 A , VDD = 25 V, RGS = 25 parameter: ID = 21 A pulsed 16 140 SPP21N10 mJ V 120 110 12 VGS EAS 100 90 0,2 VDS max 10 0,8 VDS max 80 8 70 60 6 50 40 4 30 20 2 10 0 25 45 65 85 105 125 145 °C 185 0 0 5 10 15 20 25 30 35 40 nC 50 QGate Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP21N10 120 V (BR)DSS V 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C 200 Tj Page 7 2002-01-31 Preliminary data SPI21N10 SPP21N10,SPB21N10 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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