PROFET® ITS621L1 Smart Two Channel Highside Power Switch for Industrial Applications Features Product Summary Overvoltage protection Operating voltage Operating temperature • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Vbb(AZ) Vbb(on) Ta 43 V 5.0 ... 34 V -30…+85 °C both channels: On-state resistance RON Load current (ISO) IL(ISO) Current limitation IL(SCr) each parallel 100 50 mΩ 4.4 8.5 A 8 8 A PG-TO220AB/7 Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial applications • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays, fuses and discrete circuits 7 7 1 1 Straight leads Standard General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Voltage source V 3 IN1 6 IN2 5 ST ESD Overvoltage protection Current limit 1 4 Logic Voltage Level shifter sensor Rectifier 1 Logic Limit for unclamped ind. loads 1 Charge pump 2 PROFET 1 Temperature sensor 1 Gate 2 protection Current limit 2 Limit for unclamped ind. loads 2 Open load Short to Vbb detection 2 GND 2 OUT1 Open load Short to Vbb detection 1 Charge pump 1 Level shifter Rectifier 2 1) + V bb Gate 1 protection Signal GND OUT2 7 Temperature sensor 2 R R O1 Load O2 GND Load GND With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Infineon Technologies AG 1 of 14 2006-Mar-28 PROFET® ITS621L1 Pin Symbol Function 1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1 2 GND Logic ground 3 IN1 Input 1, activates channel 1 in case of logical high signal 4 Vbb 5 ST Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback: open drain, low on failure 6 IN2 Input 2, activates channel 2 in case of logical high signal 7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 Ω, RL= 2.7 Ω, td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) Junction temperature Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. one channel, IL = 4.4 A, ZL = 32 mH, 0 Ω: both channels parallel, IL = 8.5 A, ZL = 17 mH, 0 Ω: Symbol Vbb Vbb Values 43 34 Unit V V 60 V IL Tj Ta Tstg Ptot self-limited +150 -30 ...+85 -40 ...+105 75 A °C EAS 395 790 mJ 1.0 2.0 kV -10 ... +16 ±2.0 ±5.0 V mA VLoad dump4) W see diagrams on page 9 Electrostatic discharge capability (ESD) (Human Body Model) IN: VESD all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) Current through input pin (DC) Current through status pin (DC) VIN IIN IST see internal circuit diagrams page 7 2) 3) 4) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Infineon Technologies AG 2 2006-Mar-28 PROFET® ITS621L1 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case, both channels: RthJC each channel: junction - ambient (free air): RthJA min ---- Values typ max -1.7 -3.4 -75 Unit K/W Electrical Characteristics Parameter and Conditions, each channel Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1 or 7) IL = 2 A Tj=25 °C: RON Tj=150 °C: each channel Nominal load current, ISO Norm (pin 4 to 1 or 7) VON = 0.5 V, TC = 85 °C each channel: IL(ISO) both channels parallel: Output current (pin 1 or 7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8 Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C Infineon Technologies AG 3 3.5 6.8 80 160 4.4 8.5 -- -- --10 ton toff 80 80 200 200 400 400 µs dV /dton 0.1 -- 1 V/µs -dV/dtoff 0.1 -- 1 V/µs IL(GNDhigh) -- 100 200 mΩ A mA 2006-Mar-28 PROFET® ITS621L1 Parameter and Conditions, each channel Symbol Values min typ max Tj =-40...+150°C: Tj =-40...+150°C: Tj =-40...+25°C: Tj =+150°C: Undervoltage restart of charge pump see diagram page 13 Tj =-40...+150°C: Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: 6 ) Overvoltage protection Tj =-40...+150°C: Ibb=40 mA Standby current (pin 4) VIN=0 Tj=-40...+25°C: Tj= 150°C: Vbb(on) Vbb(under) Vbb(u rst) 5.0 3.5 -- ---- Vbb(ucp) -- ∆Vbb(under) Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 2)7), VIN=5 V both channels on, Tj =-40...+150°C Operating current (Pin 2)7) one channel on, Tj =-40...+150°C: at Tj = 25 °C, Vbb = 12 V unless otherwise specified Operating Parameters Operating voltage5) Undervoltage shutdown Undervoltage restart 5) 6) 7) Unit V V V 5.6 34 5.0 5.0 7.0 7.0 -- 0.2 -- V 34 33 -42 --0.5 47 43 ---- V V V V 14 17 -- 30 35 12 µA IL(off) ---- IGND -- 4 6 mA IGND -- 2 3 mA Ibb(off) V µA At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 8. Add IST, if IST > 0, add IIN, if VIN>5.5 V Infineon Technologies AG 4 2006-Mar-28 PROFET® ITS621L1 Parameter and Conditions, each channel Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Protection Functions8) Initial peak short circuit current limit (pin 4 to 1 or 7) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 11) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 4 to 2) 9) Reverse battery voltage drop (Vout > Vbb) IL = -2.9 A, each channel Tj=150 °C: Diagnostic Characteristics Open load detection current (on-condition) Values min typ max Unit IL(SCp) 11 9 5 18 14 8 25 22 14 A -- 8 -- A 41 150 --- 47 -10 -- 53 --32 V °C K V -- 610 -- mV 20 20 --- 400 300 mA 2 3 4 V 4 10 30 kΩ IL(SCr) VON(CL) Tjt ∆Tjt -Vbb -VON(rev) Tj=-40 °C: IL (OL) Tj=25 ..150°C: Open load detection voltage10) (off-condition) VOUT(OL) Tj=-40..150°C: Internal output pull down (pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150°C RO 8) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 9) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8). 10) External pull up resistor required for open load detection in off state. Infineon Technologies AG 5 2006-Mar-28 PROFET® ITS621L1 Parameter and Conditions, each channel Symbol Values min typ max RI 2.5 3.5 6 kΩ VIN(T+) VIN(T-) ∆ VIN(T) IIN(off) 1.7 1.5 -1 --0.5 -- 3.5 --50 V V V µA On state input current (pin 3 or 6), VIN = 3.5 V, Tj =-40..+150°C IIN(on) 20 50 90 µA Delay time for status with open load after switch off (other channel in off state) (see timing diagrams, page 12), Tj =-40..+150°C Delay time for status with open load after switch off (other channel in on state) (see timing diagrams, page 12), Tj =-40..+150°C Status invalid after positive input slope (open load) Tj=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+25°C, IST = +1.6 mA: Tj = +150°C, IST = +1.6 mA: td(ST OL4) 100 320 800 µs td(ST OL5) -- 5 20 µs td(ST) -- 200 600 µs 5.4 --- 6.1 --- -0.4 0.6 V at Tj = 25 °C, Vbb = 12 V unless otherwise specified Input and Status Feedback11) Input resistance Tj=-40..150°C, see circuit page 7 Input turn-on threshold voltage Tj =-40..+150°C: Input turn-off threshold voltage Tj =-40..+150°C: Input threshold hysteresis Off state input current (pin 3 or 6), VIN = 0.4 V, Tj =-40..+150°C 11) VST(high) VST(low) Unit If a ground resistor RGND is used, add the voltage drop across this resistor. Infineon Technologies AG 6 2006-Mar-28 PROFET® ITS621L1 Truth Table Normal operation Channel 1 Open load Channel 2 Channel 1 Short circuit to Vbb Channel 2 both channel Overtemperature Channel 1 Channel 2 Undervoltage/ Overvoltage L = "Low" Level H = "High" Level IN1 IN2 OUT1 OUT2 ST ITS621L1 L L H H L L H L H X L L H L H L H L H X L L H L H X L L H H Z Z H L H X H H H L H L H L H X Z Z H L H X L H X L X H L H X X X L L H L H X X X L H X L H X L L L L L X X L H H H L L L X X L L L H H H H H(L12)) H L H(L12)) H L L13) H H(L14)) L13) H H(L14)) H L L H L H L H X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12...13) Terms V bb Input circuit (ESD protection) I IN1 4 3 OUT1 IN2 GND GND IN I L1 IGND I ESD-ZD I I L2 I I GND 7 V OUT1 2 R 1 PROFET OUT2 ST V V IN1 IN2 V 5 ST R VON1 VON2 Vbb IN1 I IN2 6 I ST Ibb ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). VOUT2 12) With additional external pull up resistor An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 14) Low resistance to V may be detected in the ON-state by the no-load-detection bb 13) Infineon Technologies AG 7 2006-Mar-28 PROFET® ITS621L1 Open-load detection Status output ON-state diagnostic condition: VON < RON * IL(OL); IN high +5V R ST(ON) + V bb ST ESDZD GND VON ON ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Inductive and overvoltage output clamp OUT Open load detection Logic unit OFF-state diagnostic condition: VOUT > 3 V typ.; IN low + V bb V Z R VON EXT OFF OUT V OUT PROFET GND Open load detection Logic unit VON clamped to 47 V typ. R O Signal GND Overvolt. and reverse batt. protection + V bb IN1 V RI GND disconnect Z2 V IN2 4 bb Logic R ST 3 ST IN1 Ibb Vbb OUT1 V 6 Z1 GND 5 R GND PROFET ST GND OUT2 7 2 V Signal GND VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 kΩ typ, RGND= 150 Ω Infineon Technologies AG IN2 1 V V IN1 IN2 ST V GND Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. 8 2006-Mar-28 PROFET® ITS621L1 GND disconnect with GND pull up Inductive Load switch-off energy dissipation E bb 4 3 V Vbb IN1 OUT1 IN1 6 V IN2 5 E AS 1 PROFET IN2 OUT2 ST GND IN 7 V bb = V ST OUT PROFET 2 V ELoad Vbb ST GND GND ZL { L RL EL ER Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load Energy stored in load inductance: 2 EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is 4 3 Vbb IN1 OUT1 high 6 5 EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt, 1 PROFET IN2 OUT2 ST GND with an approximate solution for RL > 0 Ω: IL· L IL·RL ) EAS= 2·R ·(Vbb + |VOUT(CL)|)· ln (1+ |V L OUT(CL)| 7 2 V Maximum allowable load inductance for a single switch off (both channels parallel) L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, RL = 0 Ω L [mH] bb Normal load current can be handled by the PROFET itself. 10000 Vbb disconnect with charged external inductive load 4 3 IN1 1000 Vbb OUT1 high 6 5 IN2 PROFET OUT2 ST 1 GND D 100 7 2 V bb 10 If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. 1 3 5 7 9 11 IL [A] Infineon Technologies AG 9 2006-Mar-28 PROFET® ITS621L1 Typ. transient thermal impedance chip case ZthJC = f(tp), one Channel active ZthJC [K/W] 10 1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.1 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Typ. transient thermal impedance chip case ZthJC = f(tp), both Channel active ZthJC [K/W] 1 0.1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Infineon Technologies AG 10 2006-Mar-28 PROFET® ITS621L1 Timing diagrams Both channels are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN IN1 IN2 t ST V bb d(ST) *) V V OUT OUT1 V OUT2 IL I L(OL) t ST open drain t *) if the time constant of load is too large, open-load-status may occur Figure 3a: Short circuit shut down by overtempertature, reset by cooling Figure 2a: Switching a lamp: IN IN other channel: normal operation ST IL V I I L(SCp) OUT I L(SCr) L ST t t Heating up may require several milliseconds, depending on external conditions Infineon Technologies AG 11 2006-Mar-28 PROFET® ITS621L1 Figure 4a: Overtemperature: Reset if Tj <Tjt Figure 5b: Open load: detection in ON-state, turn on/off to open load IN1 IN IN2 channel 2: normal operation ST V OUT1 V OUT I L1 channel 1: open load T t J d(ST OL4) t t d(ST) d(ST OL5) t Figure 5c: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load Figure 5a: Open load: detection in ON-state, open load occurs in on-state IN1 IN1 IN2 channel 2: normal operation channel 2: normal operation V VOUT1 OUT1 channel 1: open load IL1 t ST t IN2 d(ST) normal load t d(ST OL1) t d(ST OL2) I L1 open load t d(ST OL1) ST t d(ST OL2) channel 1: open load t d(ST) t d(ST) t d(ST OL5) ST t t td(ST OL5) depends on external circuitry because of high impedance td(ST OL1) = 30 µs typ., td(ST OL2) = 20 µs typ Infineon Technologies AG 12 2006-Mar-28 PROFET® ITS621L1 Figure 6a: Undervoltage: Figure 7a: Overvoltage: IN V IN bb Vbb V ON(CL) Vbb(over) V bb(o rst) Vbb(u cp) Vbb(u rst) V bb(under) V OUT V OUT ST ST open drain t t Figure 6b: Undervoltage restart of charge pump off-state on-state V V bb(u rst) V V V bb(over) off-state VON(CL) V on bb(o rst) bb(u cp) bb(under) V bb charge pump starts at Vbb(ucp) =5.6 V typ. Infineon Technologies AG 13 2006-Mar-28 PROFET® ITS621L1 Package and Ordering Code Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2006 All Rights Reserved. All dimensions in mm Standard PG-TO220AB/7 ITS621L1 Ordering code SP000219533 Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. PG-TO220AB/7, Opt. E3230 Ordering code ITS621L1 E3230 SP000221224 Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Infineon Technologies AG 14 2006-Mar-28