PROFET® BTS 307
Smart Highside Power
Switch
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
65
V
5.8 ... 58 V
250 mΩ
1.7
A
TO-220AB/5
5
5
Standard
1
Straight leads
1
5
SMD
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
3
V Logic
2
Voltage
Charge pump
sensor
Level shifter
Rectifier
IN
OUT
5
Temperature
sensor
Open load
ESD
4
Limit for
unclamped
ind. loads
Logic
Load
detection
ST
Short circuit
detection
GND
PROFET
1
Signal GND
)
1
Load GND
With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
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BTS 307
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Supply voltage for full short circuit protection2)
Tj Start=-40 ...+150°C
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Electrostatic discharge capability (ESD)
IN, ST:
(Human Body Model)
all other pins:
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
Symbol
Vbb
Vbb
IL
Tj
Tstg
Ptot
VESD
VIN
IIN
IST
Values
65
40
Unit
V
V
self-limited
-40 ...+150
-55 ...+150
50
1.0
tbd (>1.0)
-0.5 ... +36
±2.0
±5.0
A
°C
W
kV
V
mA
see internal circuit diagrams page 5
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
chip - case: RthJC
junction - ambient (free air):
2)
RthJA
min
---
Values
typ max
-2.5
-75
Unit
K/W
Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External
shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with
higher Vbb.
Semiconductor Group
2
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BTS 307
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A, Vbb = 24 V
Tj=25 °C: RON
Tj=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=32 V, VIN= 0, see diagram
page 6
Turn-on time to 90% VOUT:
Turn-off time to 10% VOUT:
RL = 12 Ω, Vbb = 20V, Tj =-40...+150°C
Slew rate on, 10 to 30% VOUT,
RL = 12 Ω, Vbb = 20V, Tj =-40...+150°C
Slew rate off, 10 to 30% VOUT,
RL = 12 Ω, Vbb = 20V, Tj =-40...+150°C
Operating Parameters
Operating voltage 3)
Tj =-40...+150°C:
Undervoltage shutdown
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+150°C:
Undervoltage restart of charge pump
see diagram page 10
Tj =-40...+150°C:
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage protection4)
Tj =-40...+150°C:
Ibb=40 mA
Standby current (pin 3),
VIN=0
Tj=-40...+150°C:
5)
Operating current (Pin 1) , VIN=5 V
)
3
4)
)
5
IL(ISO)
IL(GNDhigh)
--
220
250
500
1.4
390
1.7
mΩ
--
--
-1.1
15
20
---
80
70
µs
dV /dton
--
--
6
V/µs
-dV/dtoff
--
--
7
V/µs
Vbb(on)
Vbb(under)
Vbb(u rst)
Vbb(ucp)
5.8
2.7
---
---5.6
58
4.7
4.9
7.5
V
V
V
V
--
0.4
--
V
65
70
--
V
ton
toff
∆Vbb(under)
Vbb(AZ)
µA
Ibb(off)
IGND
A
mA
---
10
2.2
50
--
mA
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
See also VON(CL) in table of protection functions and circuit diagram page 6.
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
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BTS 307
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Protection Functions6)
Initial peak short circuit current limit (pin 3 to 5)
Tj =-40°C:
Tj =25°C:
=+150°C:
Tj
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
IL= 1 A, Tj =-40..+150°C:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 7)
Values
min
typ
max
Unit
IL(SCp)
--4.0
-10
--
19
---
A
59
150
---
--10
--
75
--32
V
°C
K
V
--
6
--
µA
2.4
3
4
V
V
VON(SC)
--
2.5
--
RI
--
20
--
kΩ
VIN(T+)
VIN(T-)
∆ VIN(T)
IIN(off)
1
0.8
-1
--0.5
--
2.5
--30
V
V
V
µA
On state input current (pin 2), VIN = 3.5? V
IIN(on)
10
25
70
µA
Delay time for status with open load
td(ST OL3)
--
200
--
µs
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high)
ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(low)
5.4
--
6.1
--
-0.4
V
Diagnostic Characteristics
Open load detection current
IL(off)
(included in standby current Ibb(off))
Open load detection voltage
Short circuit detection voltage
(pin 3 to 5)
VON(CL)
Tjt
∆Tjt
-Vbb
Tj=-40..150°C: VOUT(OL)
Input and Status Feedback8)
Input resistance
see circuit page 5
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V
after Input neg. slope (see diagram page 10)
6)
)
7
8)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 6).
If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
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BTS 307
Truth Table
Input-
Output
level
level
Normal
operation
Open load
Status
BTS 307
BTS 707
L
L
L
H
H
H
9
)
L
H
H
H
H
L
L
L
H
L
L
L
H
H
H
H
H
L
L
L
H
L
L
L
L
L
H
L
L
no overvoltage shutdown,
see normal operation
Short circuit
to GND
Short circuit
to Vbb
Overtemperature
Undervoltage
Overvoltage
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 10)
Terms
Status output
+5V
Ibb
3
I IN
2
IL
V
IN
VST
OUT
PROFET
I ST
V
R ST(ON)
Vbb
IN
4
5
ST
GND
GND
1
bb
R
IGND
IN
ESDZD
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 0 Ω at 1.6 mA, ESD zener diodes are not to
be used as voltage clamp at DC conditions. Operation
in this mode may result in a drift of the zener voltage
(increase of up to 1 V).
VOUT
GND
Input circuit (ESD protection)
R
ST
VON
Short circuit detection
Fault Signal at ST-Pin: VON > 2.5 V typ, no switch off by
the PROFET itself, external switch off recommended!
I
+ V bb
ESD-ZD I
I
I
V
ON
GND
OUT
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
)
9
Logic
unit
Short circuit
detection
Power Transistor off, high impedance, internal pull up current source for open load detection.
Semiconductor Group
5
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BTS 307
GND disconnect
Inductive and overvoltage output clamp
+ V bb
V
3
+5V
Z
VON
12k
V
bb
OUT
5
ST
4
PROFET
Vbb
PROFET
OUT
GND
IN
2
GND
1
V
IN VST
V
GND
VON clamped to -- V typ.
For Vbb=24V and VIN=0V: VST>2.8V @ IST ≥ 0 if pulled up as shown.
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Overvolt. and reverse batt. protection
GND disconnect with GND pull up
+ V bb
V
R IN
IN
RI
3
Z2
2
IN
Logic
R ST
PROFET
ST
V
Vbb
4
5
ST
GND
PROFET
Z1
OUT
1
GND
R GND
V
V
bb
V
IN ST
V
GND
Signal GND
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 Ω,
RST= 15 kΩ, RI= 20 kΩ typ.
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Vbb disconnect with energized inductive
load
Open-load detection
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
3
high
2
IN
Vbb
PROFET
4
OFF
I
5
ST
GND
1
L(OL)
V
Logic
unit
OUT
Open load
detection
V
OUT
bb
Normal load current can be handled by the PROFET
itself.
Signal GND
Semiconductor Group
6
2003-Oct-01
BTS 307
Inductive Load switch-off energy
dissipation
Vbb disconnect with charged external
inductive load
high
2
S
3
IN
Vbb
E AS
IN
PROFET
4
E bb
OUT
5
D
PROFET
ST
=
GND
OUT
ST
GND
1
V
ELoad
Vbb
ZL
bb
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
{
L
RL
EL
ER
Energy stored in load inductance:
2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS=
Semiconductor Group
7
IL· L
IL·RL
·(Vbb + |VOUT(CL)|)· ln (1+
)
|VOUT(CL)|
2·RL
2003-Oct-01
BTS 307
Options Overview
all versions: High-side switch, Input protection, ESD protectionand reverse battery
protection with 150 Ω in GND connection, protection against loss of ground
Type
Logic version
BTS 410D2 410E2 410G2 410H2
Overtemperature protection with hysteresis
Tj >150 °C, latch function10)11)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
D
E
G
X
X
X
X
X
X
X
308
H
X
switches off when VON>3.5 V typ. and Vbb> 8 V
typ10) (when first turned on after approx. 150 µs)
switches off when VON>8.5 V typ.10)
(when first turned on after approx. 150 µs)
307
X
X
X
Achieved through overtemperature protection
X
Open load detection
in OFF-state with sensing current 6 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
X
X
X
X
X
Undervoltage shutdown with auto restart
X
X
X
X
X
X
Overvoltage shutdown with auto restart
X
X
X
X
-
X
overtemperature
X
X
X
X
X
X
short circuit to GND
X
X
-
X
X
X
-12)
12)
-12)
X
X
X
Status feedback for
short to Vbb
-
open load
X
X
X
X
X
X
undervoltage
X
-
-
-
X
-
overvoltage
X
-
-
-
-
-
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Status output type
CMOS
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
Protection against loss of GND
X
X
) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V
OUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
11)
With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
12)
Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
10
Semiconductor Group
8
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BTS 307
Timing diagrams
Figure 3a: Short circuit:
shut down by overtempertature, reset by cooling
Figure 1a: Vbb turn on, :
IN
IN
V
V OUT
t d(bb IN)
V
bb
normal
operation
I
OUT
Output short to GND
I
L
L(SCp)
I
L(SCr)
A
ST open drain
A
ST
t
t
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 µs
Figure 2a: Switching an inductive load,
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
IN
ST
ST
V
V
OUT
I
Heating up requires several milliseconds, depending on external
conditions. External shutdown in response to status fault signal
recommended.
OUT
T
J
L
t
t
Semiconductor Group
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BTS 307
Figure 6a: Undervoltage:
Figure 5a: Open load, : detection in OFF-state, turn
on/off to open load
IN
IN
V
bb
t
d(ST OL3)
ST
V
bb(under)
Vbb(u cp)
V
bb(u rst)
V
V OUT
OUT
I
ST open drain
normal
open
L
t
t
*)
Figure 6b: Undervoltage restart of charge pump
td(ST,OL3) depends on external circuitry because of high
impedance
*) IL = 6 µA typ
V on
Figure 5b: Open load, : detection in OFF-state, open
load occurs in off-state
ST
on-state
off-state
IN
V
V
V
OUT
V
V
OUT(OL)
I
L
bb(u
normal
open
*)
bb(under)
Vbb
charge pump starts at Vbb(ucp) =5.6 V typ.
normal
*)
bb(u cp)
t
*) IL = 6 µA typ
Semiconductor Group
10
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BTS 307
Figure 7a: Overvoltage, no shutdown:
IN
Vbb
V
VON(CL)
OUT
VOUT(OL)
ST
t
Semiconductor Group
11
2003-Oct-01
BTS 307
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS 307
SMD TO-220AB/5, Opt. E3062 Ordering code
Ordering code
BTS 307 E3062A
tbd
C67078-S5204-A4
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
TO-220AB/5, Option E3043 Ordering code
BTS 307 E3043
T&R:
C67078-S5204-A3
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and
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Technologies Representatives worldwide (see address list).
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Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Semiconductor Group
12
2003-Oct-01