feo06075 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 F BPW 34 FS BPW 34 FS (E9087) 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter NEW: in SMT and as Reverse Gullwing 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6 0.4 0 ... 5˚ 1.8 1.4 5.08 mm spacing BPW 34 F Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g GEO06643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen bei 950 nm ● kurze Schaltzeit (typ. 20 ns) ● DIL-Plastikbauform mit hoher Packungsdichte ● BPW 34 FS/(E9087); geeignet für Vapor-Phase Löten und IR-Reflow Löten Features ● Especially suitable for applications of 950 nm ● Short switching time (typ. 20 ns) ● DIL plastic package with high packing density ● BPW 34 FS/(E9087); suitable for vaporphase and IR-reflow soldering Anwendungen Applications ● IR remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment ● Photointerrupters ● IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern, Gerätefernsteuerungen ● Lichtschranken für Gleich- und Wechsellichtbetrieb Semiconductor Group 1 1998-08-27 1.1 0.9 6.7 6.2 0...5 ˚ 0.2 0.1 0...0.1 0.3 1.2 1.1 Chip position feo06861 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) 4.0 3.7 1.7 1.5 0.9 0.7 4.5 4.3 1.8 ±0.2 0...0.1 GEO06863 1.1 0.9 6.7 6.2 0...5 ˚ 0.3 1.2 1.1 Chip position Cathode lead 0.2 0.1 Photosensitive area 2.65 mm x 2.65 mm BPW 34 FS 1.7 1.5 BPW 34 FAS (E9087) Photosensitive area 2.65 mm x 2.65 mm feo06916 4.0 3.7 0.9 0.7 4.5 4.3 1.8 ±0.2 Cathode lead GEO06916 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type Bestellnummer Ordering Code BPW 34 F Q62702-P929 BPW 34 FS Q62702-P1604 BPW 34 FS (E9087) Q62702-P1826 Semiconductor Group 2 1998-08-27 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Grenzwerte Maximum Ratings Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 ... + 85 °C Sperrspannung Reverse voltage VR 32 V Verlustleistung, TA = 25 °C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Ee = 1 mW/cm2 S 50 (≥ 40) µA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 950 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax λ 780 ... 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 7.00 mm2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×B 2.65 × 2.65 mm × mm Halbwinkel Half angle ϕ ± 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 (≤ 30) nA Spektrale Fotoempfindlichkeit Spectral sensitivity Sλ 0.59 A/W Quantenausbeute Quantum yield η 0.77 Electrons Photon Leerlaufspannung, Ee = 0.5 mW/cm2 Open-circuit voltage VO 330 (≥ 275) mV Semiconductor Group 3 L×W 1998-08-27 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics (cont’d) Bezeichnung Description Symbol Symbol Wert Value Einheit Unit Kurzschlußstrom, Ee = 0.5 mW/cm2 Short-circuit current ISC 25 µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA tr, tf 20 ns Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 72 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV – 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V NEP 4.3 × 10– 14 W √Hz Nachweisgrenze, VR = 10 V Detection limit D* 6.2 × 1012 cm · √Hz W Semiconductor Group 4 1998-08-27 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Relative spectral sensitivity Srel = f (λ) Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) OHF00368 100 OHF01097 µA 10 4 mV 160 mW Ptot 140 10 2 10 3 120 10 3 ΙP S rel % Total power dissipation Ptot = f (TA) OHF00958 80 VO 100 60 10 1 10 2 ΙP 40 80 60 10 0 10 1 40 20 20 0 700 800 900 1000 nm λ 10 -1 0 10 1200 10 2 µW/cm 2 10 10 4 Capacitance C = f (VR), f = 1 MHz, E = 0 OHF00080 4000 0 0 20 40 60 Ee Dark current IR = f (VR), E = 0 ΙR 10 1 0 Dark current IR = f (TA), VR = 10 V, E = 0 OHF00081 100 C pA 80 ˚C 100 TA OHF00082 10 3 Ι R nA pF 80 10 2 3000 70 60 2000 10 1 50 40 30 10 0 1000 20 10 0 0 5 10 15 V VR 0 -2 10 20 10 -1 10 0 10 1 V 10 2 VR 10 -1 0 20 40 60 80 ˚C 100 TA Directional characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 Semiconductor Group 0.4 0 20 40 60 80 5 100 120 1998-08-27