BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF1009S SOT143 1=S 2=D 3=G2 4=G1 - - JLs BF1009SR SOT143R 1=D 2=S 3=G1 4=G2 - - JLs Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 12 V Continuous drain current ID 25 mA Gate 1/ gate 2-source current ±IG1/2SM 10 Gate 1 (external biasing) +VG1SE 3 Total power dissipation Ptot V mW TS ≤ 76 °C, BF1009S, BF1009SR 200 TS ≤ 94 °C, BF1009W 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 °C Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. 1 Feb-18-2004 BF1009S... Thermal Resistance Parameter Symbol Channel - soldering point 1) Rthchs Value Unit K/W BF1009S, BF1009SR ≤ 370 BF1009SW ≤ 280 Electrical Characteristics Parameter Symbol Values Unit min. typ. max. V(BR)DS 12 - - +V(BR)G1SS 8 - 12 ±V (BR)G2SS 10 - 16 +IG1SS - - 60 µA ±IG2SS - - 50 nA IDSS - - 500 µA IDSO 10 14 19 mA - 0.9 - DC Characteristics Drain-source breakdown voltage V ID = 300 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate 2 source leakage current ±V G2S = 8 V, VG1S = 0 , V DS = 0 Drain current VDS = 9 V, VG1S = 0 , VG2S = 6 V Operating current (selfbiased) VDS = 9 V, VG2S = 6 V Gate2-source pinch-off voltage VG2S(p) V VDS = 9 V, I D = 100 µA 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Feb-18-2004 BF1009S... Electrical Characteristics Parameter AC Characteristics Symbol Values Unit min. typ. max. 26 30 - mS Cg1ss - 2.1 2.7 pF Cdss - 0.9 - 18 22 - dB - 1.4 2.1 dB 40 50 - (verified by random sampling) Forward transconductance g fs VDS = 9 V, V G2S = 6 V Gate1 input capacitance VDS = 9 V, V G2S = 6 V, f = 1 MHz Output capacitance VDS = 9 V, V G2S = 6 V, f = 1 MHz Power gain (self biased) Gp VDS = 9 V, V G2S = 6 V, f = 800 MHz Noise figure F VDS = 9 V, V G2S = 6 V, f = 800 MHz ∆G p Gain control range VDS = 9 V, V G2S = 6 ... 0 V, f = 800 MHz 3 Feb-18-2004 BF1009S... Total power dissipation Ptot = ƒ(TS) Total power dissipation Ptot = ƒ(TS) BF1009S, BF1009SR BF1009SW 220 220 mA 180 180 160 160 P tot P tot mW 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 75 90 105 120 °C TS 150 TS Drain current ID = ƒ(VG2S) Insertion power gain |S21|² = ƒ(VG2S) 10 dB 15 mA -5 11 -10 |S21|2 ID 0 12 10 9 -15 -20 8 -25 7 -30 6 -35 5 -40 4 3 -45 2 -50 1 -55 0 0 1 2 3 4 V -60 0 6 VG2S 1 2 3 4 V 6 VG2S 4 Feb-18-2004 BF1009S... Forward transfer admittance Gate 1 input capacitance Cg1ss= ƒ(Vg2s) |Y21| = ƒ(VG2S) f = 200MHz 28 mS pF 3 22 2.4 20 2.2 C g1ss |Y 21| 24 18 16 2 1.8 1.6 14 1.4 12 1.2 10 1 8 0.8 6 0.6 4 0.4 2 0.2 0 0 1 2 3 4 V 0 0 6 VG2S 1 2 3 4 V 6 VG2S Output capacitance C dss = ƒ(VG2S) f = 200MHz pF 3 2.4 Cdss 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 V 6 VG2S 5 Feb-18-2004