INFINEON BF1009S

BF1009S...
Silicon N_Channel MOSFET Tetrode
• For low noise, high gain controlled
input stage up to 1 GHz
• Operating voltage 9 V
• Integrated biasing network
Drain
AGC
HF
Input
G2
G1
HF Output
+ DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BF1009S
SOT143
1=S
2=D
3=G2
4=G1
-
-
JLs
BF1009SR
SOT143R
1=D
2=S
3=G1
4=G2
-
-
JLs
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage
VDS
12
V
Continuous drain current
ID
25
mA
Gate 1/ gate 2-source current
±IG1/2SM
10
Gate 1 (external biasing)
+VG1SE
3
Total power dissipation
Ptot
V
mW
TS ≤ 76 °C, BF1009S, BF1009SR
200
TS ≤ 94 °C, BF1009W
200
Storage temperature
Tstg
-55 ... 150
Channel temperature
Tch
150
°C
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1
Feb-18-2004
BF1009S...
Thermal Resistance
Parameter
Symbol
Channel - soldering point 1)
Rthchs
Value
Unit
K/W
BF1009S, BF1009SR
≤ 370
BF1009SW
≤ 280
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DS
12
-
-
+V(BR)G1SS
8
-
12
±V (BR)G2SS
10
-
16
+IG1SS
-
-
60
µA
±IG2SS
-
-
50
nA
IDSS
-
-
500
µA
IDSO
10
14
19
mA
-
0.9
-
DC Characteristics
Drain-source breakdown voltage
V
ID = 300 µA, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, V G2S = 0 , VDS = 0
Gate2 source breakdown voltage
±IG2S = 10 mA, VG1S = 0 , V DS = 0
Gate1-source leakage current
VG1S = 6 V, VG2S = 0
Gate 2 source leakage current
±V G2S = 8 V, VG1S = 0 , V DS = 0
Drain current
VDS = 9 V, VG1S = 0 , VG2S = 6 V
Operating current (selfbiased)
VDS = 9 V, VG2S = 6 V
Gate2-source pinch-off voltage
VG2S(p)
V
VDS = 9 V, I D = 100 µA
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2
Feb-18-2004
BF1009S...
Electrical Characteristics
Parameter
AC Characteristics
Symbol
Values
Unit
min.
typ.
max.
26
30
-
mS
Cg1ss
-
2.1
2.7
pF
Cdss
-
0.9
-
18
22
-
dB
-
1.4
2.1
dB
40
50
-
(verified by random sampling)
Forward transconductance
g fs
VDS = 9 V, V G2S = 6 V
Gate1 input capacitance
VDS = 9 V, V G2S = 6 V, f = 1 MHz
Output capacitance
VDS = 9 V, V G2S = 6 V, f = 1 MHz
Power gain (self biased)
Gp
VDS = 9 V, V G2S = 6 V, f = 800 MHz
Noise figure
F
VDS = 9 V, V G2S = 6 V, f = 800 MHz
∆G p
Gain control range
VDS = 9 V, V G2S = 6 ... 0 V, f = 800 MHz
3
Feb-18-2004
BF1009S...
Total power dissipation Ptot = ƒ(TS)
Total power dissipation Ptot = ƒ(TS)
BF1009S, BF1009SR
BF1009SW
220
220
mA
180
180
160
160
P tot
P tot
mW
140
140
120
120
100
100
80
80
60
60
40
40
20
20
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
15
30
45
60
75
90 105 120 °C
TS
150
TS
Drain current ID = ƒ(VG2S)
Insertion power gain
|S21|² = ƒ(VG2S)
10
dB
15
mA
-5
11
-10
|S21|2
ID
0
12
10
9
-15
-20
8
-25
7
-30
6
-35
5
-40
4
3
-45
2
-50
1
-55
0
0
1
2
3
4
V
-60
0
6
VG2S
1
2
3
4
V
6
VG2S
4
Feb-18-2004
BF1009S...
Forward transfer admittance
Gate 1 input capacitance Cg1ss= ƒ(Vg2s)
|Y21| = ƒ(VG2S)
f = 200MHz
28
mS
pF
3
22
2.4
20
2.2
C g1ss
|Y 21|
24
18
16
2
1.8
1.6
14
1.4
12
1.2
10
1
8
0.8
6
0.6
4
0.4
2
0.2
0
0
1
2
3
4
V
0
0
6
VG2S
1
2
3
4
V
6
VG2S
Output capacitance C dss = ƒ(VG2S)
f = 200MHz
pF
3
2.4
Cdss
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
1
2
3
4
V
6
VG2S
5
Feb-18-2004