INFINEON BF2040W

BF2040...
Silicon N-Channel MOSFET Tetrode
• For low noise , high gain controlled
input stages up to 1GHz
• Operating voltage 5 V
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BF2040
SOT143
1=S
2=D
3=G2
4=G1
-
-
NFs
BF2040R
SOT143
1=D
2=S
3=G1
4=G2
-
-
NFs
BF2040W
SOT343
1=D
2=S
3=G1
4=G2
-
-
NF
Maximum Ratings
Parameter
Symbol
Drain-source voltage
VDS
Continuous drain current
ID
20
Gate 1/ gate 2-source current
±IG1/2SM
10
Gate 1 (external biasing)
+VG1SE
7
Total power dissipation
Ptot
Value
8
Unit
V
mA
V
mW
TS ≤ 76 °C, BF2040, BF2040R
200
TS ≤ 94 °C, BF2040W
200
Storage temperature
Tstg
-55 ... 150
Channel temperature
Tch
150
°C
Thermal Resistance
Parameter
Symbol
Channel - soldering point 1)
Rthchs
Value
Unit
K/W
BF2040, BF2040R
≤ 370
BF2040W
≤ 280
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Feb-25-2004
BF2040...
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DS
10
-
-
+V(BR)G1SS
6
-
15
+V(BR)G2SS
6
-
15
+IG1SS
-
-
50
+IG2SS
-
-
50
IDSS
-
-
50
µA
IDSX
-
15
-
mA
VG1S(p)
0.3
0.6
-
V
VG2S(p)
0.3
0.7
-
DC Characteristics
Drain-source breakdown voltage
V
ID = 20 µA, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, V G2S = 0 , VDS = 0
Gate2-source breakdown voltage
+IG2S = 10 mA, V G1S = 0 , VDS = 0
Gate1-source leakage current
nA
VG1S = 5 V, VG2S = 0 , VDS = 0
Gate2-source leakage current
VG2S = 5 V, VG1S = 0 , VDS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
Gate2-source pinch-off voltage
VDS = 5 V, I D = 20 µA
2
Feb-25-2004
BF2040...
Electrical Characteristics
Symbol
Parameter
Values
Unit
min.
typ.
max.
37
42
-
mS
Cg1ss
-
2.9
3.4
pF
Cdss
-
1.6
-
20
23
-
dB
-
1.6
2.2
dB
45
50
-
AC Characteristics - (verified by random sampling)
Forward transconductance
gfs
VDS = 5 V, I D = 15 mA, VG2S = 4 V
Gate1 input capacitance
VDS = 5 V, I D = 15 mA, VG2S = 4 V,
f = 1 MHz
Output capacitance
VDS = 5 V, I D = 15 mA, VG2S = 4 V,
f = 1 MHz
Power gain
Gp
VDS = 5 V, I D = 15 mA, VG2S = 4 V,
f = 800 MHz
Noise figure
F
VDS = 5 V, I D = 15 mA, VG2S = 4 V,
f = 800 MHz
∆G p
Gain control range
VDS = 5 V, V G2S = 4 ...0 V , f = 800 GHz
3
Feb-25-2004
BF2040...
Total power dissipation Ptot = ƒ(TS)
Total power dissipation Ptot = ƒ(TS)
BF2040, BFD2040R
BF2040W
220
220
mA
180
180
160
160
P tot
P tot
mW
140
140
120
120
100
100
80
80
60
60
40
40
20
20
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
15
30
45
60
75
90 105 120 °C
TS
150
TS
Drain current ID = ƒ(IG1)
Output characteristics ID = ƒ(V DS)
VG2S = 4 V
VG2S = 4V
28
mA
26
mA
24
22
22
20
20
18
18
ID
ID
VG1S = Parameter
16
1.3V
16
14
14
1.2V
12
12
10
10
1.1V
8
8
1V
6
6
4
4
2
2
0
0
1.4V
10
20
30
40
50
60
70
µA
0
0
90
IG1
1
2
3
4
5
6
7
8
V
10
VDS
4
Feb-25-2004
BF2040...
Gate 1 current IG1 = ƒ(V G1S)
Gate 1 forward transconductance
VDS = 5V
g fs = ƒ(ID)
VDS = 5V, VG2S = Parameter
VG2S = Parameter
195
µA
45
mS
4V
4V
165
35
150
g fs
135
I G1
3.5V
3.5V
120
105
30
3V
25
3V
90
2.5V
20
2V
75
15
2.5V
60
45
10
2V
30
5
15
0
0
0.4
0.8
1.2
1.6
2
2.4
V
0
0
3.2
4
8
12
16
20
24
28
32 mA
VG1S
Drain current ID = ƒ(VG1S)
40
ID
VDS = 5V
Drain current ID = ƒ(V GG)
VDS = 5V, VG2S = 4V, RG1 = 80kΩ
VG2S = Parameter
(connected to VGG, V GG=gate1 supply voltage)
16
28
mA
4V
mA
3V
24
22
12
18
ID
ID
20
10
16
2V
14
8
12
6
10
8
1.5V
4
6
4
2
2
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
V
0
0
2
VG1S
1
2
3
V
5
VGG
5
Feb-25-2004
BF2040...
Drain current ID = ƒ(VGG)
VG2S = 4V
RG1 = Parameter in kΩ
28
mA
70
24
80
22
90
ID
20
18
110
16
130
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
V
8
VGG=VDS
6
Feb-25-2004