INFINEON BTS6510

Data Sheet BTS6510
Smart Highside High Current Power Switch
Product Summary
Operating voltage
On-state resistance
Noinal current
Load current (ISO)
Short circuit current limitation
Current sense ratio
Reversave
• Reverse battery protection by self turn on of
power MOSFET
Features
• Overload protection
• Current limitation
• Short circuit protection
• Overtemperature protection
• Overvoltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
Vbb(on) 5.0 ... 34
RON
IL(nom)
IL(ISO)
IL(SC)
IL : IIS
V
6.0 mΩ
17 A
70
A
130
A
14 000
TO 220-7
Application
7
• Power switch with current sense diagnostic
feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
1
S M D
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load

current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
4 & Tab
R
Voltage
source
Voltage
sensor
Overvoltage
Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
3
IN
Logic
ESD
I IN
Limit for
unclamped
ind. loads
Output
Voltage
detection
+ V bb
bb
OUT
1,2,6,7
IL
Current
Sense
Load
Temperature
sensor
IS

PROFET
I IS
Load GND
5
VIN
V IS
R
IS
Logic GND
1
)
2)
With additional external diode.
Additional external diode required for energized inductive loads (see page 8).
Infineon Technologies AG
Page 1of 15
2003-Oct-01
Data Sheet BTS6510
Pin
Symbol
Function
1
OUT
O
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
3
especially in high current applications! )
2
OUT
O
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!3)
3
IN
I
Input, activates the power switch in case of short to ground
4
Vbb
+
Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the Vbb connection
4
instead of this pin ).
5
IS
S
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 6)
6
OUT
O
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!3)
7
OUT
O
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications!3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for short circuit protection,
Tj,start =-40 ...+150°C: (EAS limitation see diagram on page 9)
Load current (short circuit current, see page 5)
Load dump protection VLoadDump = VA + Vs, VA = 13.5 V
RI5) = 2 Ω, RL = 0.54 Ω, td = 200 ms,
IN, IS = open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.,
IL = 20 A, ZL = 7.5 mH, 0 Ω, (see diagrams on page 9 )
Electrostatic discharge capability (ESD)
Symbol
Vbb
Vbb
Values
42
34
Unit
V
V
self-limited
A
75
V
Tj
Tstg
Ptot
-40 ...+150
-55 ...+150
170
°C
EAS
1.5
J
4
kV
+15 , -250
+15 , -250
mA
IL
VLoad dump6)
VESD
W
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
Current through input pin (DC)
Current through current sense status pin (DC)
IIN
IIS
see internal circuit diagrams on page 7
3)
4)
5)
6)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Otherwise add about 0.3 mΩ to the RON if the pin is used instead of the tab.
RI = internal resistance of the load dump test pulse generator.
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Page 2 of 15
2003-Oct-01
Data Sheet BTS6510
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
7
chip - case: RthJC )
junction - ambient (free air): RthJA
SMD version, device on PCB8):
min
---
Values
typ
max
-- 0.75
60
-33
Unit
K/W
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7)
VIN = 0, IL = 20 A
Tj = 25 °C:
Tj = 150 °C:
VIN = 0, IL = 90 A
Tj = 150 °C:
9)
Vbb = 6V , VIN = 0, IL = 20 A
Tj = 150 °C:
10)
Nominal load current , (Tab to pins 1,2,6,7)
ISO Proposal: VON = 0.5 V,TC = 85°C,Tj ≤ 150°C 11)
SMD 8): TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V
Maximum load current in resistive range
(Tab to pins 1,2,6,7)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 12
VON = 1.8 V, Tc = 150 °C:
12)
Turn-on time
IIN
to 90% VOUT:
Turn-off time
IIN
to 10% VOUT:
RL = 1 Ω , Tj =-40...+150°C
Slew rate on 12) (10 to 30% VOUT )
RL = 1 Ω , TJ = 25 °C
Slew rate off 12) (70 to 40% VOUT )
RL = 1 Ω , TJ = 25 °C
Values
min
typ
max
6.0
10.5
10.7
17
mΩ
--
4.4
7.9
-10
IL(ISO)
IL(NOM)
55
13.6
70
17
---
A
IL(Max)
ton
toff
250
150
150
80
--230
130
--470
200
dV/dton
0.1
0.25
0.6
V/µs
-dV/dtoff
0.15
0.35
0.6
V/µs
RON
--
Unit
A
µs
7)
Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9)
Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
10)
not subject to production test, specified by design
11)
TJ is about 105°C under these conditions.
12)
See timing diagram on page 13.
)
8
Page 3 of 15
2003-Oct-01
Data Sheet BTS6510
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Inverse Load Current Operation
On-state resistance (Pins 1,2,6,7 to pin 4)
VbIN = 12 V, IL = - 20 A
Tj = 25 °C: RON(inv)
see page 9
Tj = 150 °C:
Nominal inverse load current (Pins 1,2,6,7 to Tab)
IL(inv)
)
11
VON = -0.5 V, Tc = 85 °C
-VON
Drain-source diode voltage (Vout > Vbb)
IL = - 20 A, IIN = 0, Tj = +150°C
Values
min
typ
max
--
Unit
6.0
10.5
--
mΩ
55
4.4
7.9
70
--
0.6
--
V
5.0
1.5
-3.0
34
4.5
V
V
3.0
60
62
---
4.5
-66
15
25
6.0
--25
50
V
V
A
Operating Parameters
Operating voltage (VIN = 0) 9, 13)
14
Undervoltage shutdown )
Undervoltage start of charge pump
see diagram page 14
Overvoltage protection
Ibb = 15 mA
Standby current
IIN = 0
15
)
Vbb(on)
VbIN(u)
VbIN(ucp)
Tj =-40°C: VbIN(Z)
Tj = 25...+150°C:
Tj =-40...+25°C: Ibb(off)
Tj = 150°C:
µA
) If the device is turned on before a V -decrease, the operating voltage range is extended down to VbIN(u).
bb
For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit.
14)
VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
(typ.) the charge pump is not active and VOUT ≈Vbb - 3 V.
15)
See also VON(CL) in circuit diagram on page 8.
13
Page 4 of 15
2003-Oct-01
Data Sheet BTS6510
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Protection Functions16)
Short circuit current limit (Tab to pins 1,2,6,7)17)
VON = 6 V
Tc =-40°C:
Tc =25°C:
Tc =+150°C:
18)
Output clamp
IL= 40 mA:
(inductive load switch off)
IL(SC)
IL(SC)
IL(SC)
-VOUT(CL)
Values
min
typ
max
Unit
-45
-14
110
130
115
17
-180
-20
A
39
150
--
42
-10
47
---
V
°C
K
--
--
32
V
--
5.4
8.9
7.0
12.3
mΩ
Rbb
--
120
--
Ω
IL = 90 A,Tj =-40°C: kILIS
Tj =25°C:
Tj =150°C:
IL = 20 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 10 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 4 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):
12 400
12 000
11 400
12 200
12 000
11 500
11 100
11 500
11 400
10 000
11 000
10 600
14 200
13 700
12 800
14 800
14 100
13 200
15 300
14 500
13 300
17 600
15 600
13 800
16 000
15 400
14 200
17 400
16 200
15 000
19 500
17 500
15 200
28 500
22 000
18 000
V
see diagram Ind. and overvolt. output clamp page 7
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. overvoltage),IL= 40 mA
Thermal overload trip temperature
Thermal hysteresis
VON(CL)
Tjt
∆Tjt
Reverse Battery
Reverse battery voltage 19)
-Vbb
On-state resistance (Pins 1,2,6,7 to pin 4) Tj = 25 °C: RON(rev)
Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 kΩ Tj = 150 °C:
Integrated resistor in Vbb line
Diagnostic Characteristics
Current sense ratio,
static on-condition,
kILIS = IL : IIS20,
VON < 1.5 V ),
VIS <VOUT - 5V,
VbIN > 4.0 V
see diagram on page 11
16
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
17
) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit. The
lifetime will be reduced under such conditions.
18)
This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 7). If the diode
is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.
19)
The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 8.
20)
If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
Page 5 of 15
2003-Oct-01
Data Sheet BTS6510
Parameter and Conditions
Symbol
Values
min
typ
max
IIS,lim
6.5
--
IIN = 0: IIS(LL)
--
--
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Sense current saturation
Current sense leakage current
-0.5
Unit
mA
µA
VIN = 0, IL ≤ 0: IIS(LH)
Current sense overvoltage protection
Tj =-40°C: VbIS(Z)
Tj = 25...+150°C:
Ibb = 15 mA
21)
Current sense settling time
ts(IS)
--
2
--
60
62
--
-66
--
--500
µs
Input
Input and operating current (see diagram page 12) IIN(on)
--
0.8
1.5
mA
--
--
80
µA
V
IN grounded (VIN = 0)
Input current for turn-off
22
)
IIN(off)
Truth Table
Normal
operation
Very high
load current
Currentlimitation
Short circuit to
GND
Overtemperature
Short circuit to
Vbb
Open load
Negative output
voltage clamp
Inverse load
current
Input
current
Output
Current
Sense
level
level
L
H
L
H
IIS
0
nominal
H
H
IIS, lim
H
H
0
L
H
L
H
L
H
L
H
L
L
L
L
L
H
H
24
Z )
H
L
0
0
0
0
0
23
<nominal )
0
0
0
L
H
H
H
0
0
Remark
=IL / kilis, up to IIS=IIS,lim
up to VON=VON(Fold back)
IIS no longer proportional to IL
VON > VON(Fold back)
L = "Low" Level
H = "High" Level
Overtemperature reset by cooling: Tj < Tjt (see diagram on page 14)
) not subject to production test, specified by design
22)
We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than
21
500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
23)
Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
24)
Power Transistor "OFF", potential defined by external impedance.
Page 6 of 15
2003-Oct-01
Data Sheet BTS6510
Terms
Current sense status output
I bb
4
VbIN
Vbb
VON
Vbb
R bb
V
IL
V
3
bb
IN
RIN
V
OUT
PROFET
I IN
IS
1,2,6,7
IIS
IS
5
IN
VbIS
V IS
R
I IS
VOUT
DS
R IS
Two or more devices can easily be connected in
parallel to increase load current capability.
Input circuit (ESD protection)
V bb
ZD
V
Z,IS
ZD
VIS
IS
VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be
driven only by the internal circuit as long as Vout - VIS >
5 V. If you want measure load currents up to IL(M), RIS
Vbb - 5 V
.
should be less than
IL(M) / Kilis
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Inductive and overvoltage output clamp
R bb
+ Vbb
Z,IN
V bIN
VZ1
IN
I
VON
IN
VZG
OUT
PROFET
V IN
When the device is switched off (IIN = 0) the voltage
between IN and GND reaches almost Vbb. Use a
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
VZ,IN = 66 V (typ).
DS
IS
VOUT
VON is clamped to VON(Cl) = 42 V typ. At inductive load
switch-off without DS, VOUT is clamped to VOUT(CL) =
-19 V typ. via VZG. With DS, VOUT is clamped to Vbb VON(CL) via VZ1. Using DS gives faster deenergizing of
the inductive load, but higher peak power dissipation in
the PROFET. In case of a floating ground with a
potential higher than 19V referring to the OUT –
potential the device will switch on, if diode DS is not
used.
Page 7 of 15
2003-Oct-01
Data Sheet BTS6510
Overvoltage protection of logic part
+ Vbb
V
R IN
Z,IN
V
IN
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL < 72 V or
VZb < 30 V if RIN=0). For higher clamp voltages
currents at IN and IS have to be limited to 250 mA.
R bb
Z,IS
Vbb disconnect with energized inductive
load
Logic
V OUT
Version a:
PROFET
IS
V
R IS
bb
V
V Z,VIS
RV
IN
bb
PROFET
Signal GND
Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 kΩ
nominal. Note that when overvoltage exceeds 71 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
OUT
IS
V ZL
Reverse battery protection
- Vbb
Version b:
R bb
V
IN
OUT
R IN
IN
Power
Transistor
Logic
Vbb
bb
PROFET
OUT
IS
IS
DS
D
RIS
RL
V Zb
RV
Signal GND
Power GND
Note that there is no reverse battery protection when
using a diode without additional Z-diode VZL, VZb.
RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse
Version c: Sometimes a neccessary voltage clamp is
battery protection in applications with Vbb above
given by non inductive loads RL connected to the same
1
1
1
+
+
=
16 V19); recommended value:
switch
and eliminates the need of clamping circuit:
RIN RIS RV
0.1A
1
0.1A
if DS is not used (or
=
if DS is
|Vbb| - 12V
RIN |Vbb| - 12V
used).
V
Vbb
bb
To minimize power dissipation at reverse battery
RL
operation, the summarized current into the IN and IS
OUT
IN
PROFET
pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or by
IS
proper adjusting the current through RIS and RV.
Infineon Technologies AG
Page 8 of 15
2003-Oct-01
Data Sheet BTS6510
Maximum allowable load inductance for
a single switch off
Inverse load current operation
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
L [µH]
Vbb
V bb
IL[A]
- IL
IN
+
PROFET
OUT
10000
V OUT +
IS
-
IIS
V IN
V IS
-
R IS
1000
The device is specified for inverse load current
operation (VOUT > Vbb > 0V). The current sense feature
is not available during this kind of operation (IIS = 0).
With IIN = 0 (e.g. input open) only the intrinsic drain
source diode is conducting resulting in considerably
increased power dissipation. If the device is switched
on (VIN = 0), this power dissipation is decreased to the
much lower value RON(INV) * I2 (specifications see page
4).
Note: Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
E AS
ELoad
bb
i L(t)
V bb
IN
PROFET
OUT
IS
I
IN
ZL
RIS
10
1
10
100
1000
Externally adjustable current limit
E bb
V
100
EL
L
{
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by IS*RIS . After a delay time defined by
RV*CV T1 will be reset. The device is turned on again,
the short circuit current is defined by IL(SC).
ER
RL
V bb
Vbb
IN
Energy stored in load inductance:
EL =
1/ ·L·I 2
2
L
R load
IN
Signal
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
Infineon Technologies AG
ln (1+ |V
IL·RL
OUT(CL)|
T1
Signal
GND
with an approximate solution for RL > 0 Ω:
IL· L
(V + |VOUT(CL)|)
2·RL bb
OUT
IS
RV
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS=
PROFET
CV
T2
R IS
Power
GND
)
Page 9 of 15
2003-Oct-01
Data Sheet BTS6510
Options Overview
Type
BTS
Overtemperature protection with hysteresis
Tj >150 °C, latch function25)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
with overtemperature shutdown
6510P 550P 555
650P
X
X
X
X
X
X
switches off when VON>6 V typ.
(when first turned on after approx. 180 µs)
Overvoltage shutdown
X
X
X
-
-
-
X
X26)
X
26
X )
X
X26)
Output negative voltage transient limit
to Vbb - VON(CL)
to VOUT = -19 V typ
) Latch except when V -V
bb
OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch
between turn on and td(SC).
26)
Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.
25
Infineon Technologies AG
Page 10 of 15
2003-Oct-01
Data Sheet BTS6510
Characteristics
Current sense versus load current:
IIS = f(IL), TJ= -40 ... +150 °C
Current sense ratio:
IIS = f(IL), TJ= 25 °C
30000
22000
28000
20000
26000
24000
18000
22000
max
20000
16000
max
18000
typ
14000
16000
typ
min
14000
12000
12000
min
10000
10000
0
20
40
60
80
0
IIS [mA]
20
40
60
80
kILIS
IL [A]
Current sense ratio:
KILIS = f(IL),TJ = -40°C
kilis
IL [A]
Current sense ratio:
KILIS = f(IL),TJ = 150°C
kilis
22000
30000
28000
20000
26000
24000
18000
22000
16000
20000
max
max
18000
14000
16000
typ
typ
14000
12000
12000
min
min
10000
10000
0
20
40
60
0
80
IL [A]
Infineon Technologies AG
Page 11 of 15
20
40
60
80
IL [A]
2003-Oct-01
Data Sheet BTS6510
Typ. current limitation characteristic
IL = f (VON, Tj )
Typ. input current
IIN = f (VbIN), VbIN = Vbb - VIN
IIN [mA]
IL [A]
1.6
450
400
1.4
350
1.2
300
1.0
250
0.8
200
T J = 25°C
150
0.6
0.4
100
T J = -40°C
50
T J = 150°C
0.2
0
0 VON(FB) 5
10
15
20
0
VON [V]
Typ. on-state resistance
RON = f (Vbb, Tj ); IL = 20 A; VIN = 0
0
20
40
60
80
VbIN [V]
RON [mOhm]
14
static
dynamic
12
10
Tj = 150°C
8
85°C
6
25°C
4
-40°C
2
0
0
5
10
15
40
Vbb [V]
Infineon Technologies AG
Page 12 of 15
2003-Oct-01
Data Sheet BTS6510
Timing diagrams
Figure 1a: Switching a resistive load,
change of load current in on-condition:
Figure 2c: Switching an inductive load:
IIN
IIN
VOUT
90%
dV/dtoff
VOUT
t on
dV/dton
t off
10%
IL
tslc(IS)
Load 1
IIS
t slc(IS)
IL
Load 2
IIS
tson(IS)
t
t
t soff(IS)
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
Figure 3d: Short circuit:
shut down by overtemperature detection with auto
restart on cooling
Figure 2b: Switching motors and lamps:
IIN
IN
IL
VOUT
IL(SCp)
I
L(SCr)
IIL
I IS
V
OUT >>0
V
=0
OUT
IIS
t
t
Sense current saturation can occur at very high
inrush currents (see IIS,lim on page Fehler!
Textmarke nicht definiert.).
Infineon Technologies AG
Page 13 of 15
2003-Oct-01
Data Sheet BTS6510
Figure 4e: Overtemperature
Reset if Tj<Tjt
IIN
IIS
Auto Restart
VOUT
Tj
t
Figure 6f: Undervoltage restart of charge pump,
overvoltage clamp
VOUT
VIN = 0
VON(CL)
dynamic, short
Undervoltage
not below
VbIN(u)
6
4
IIN = 0
2
V ON(CL)
0
0
VbIN(u)
VbIN(ucp)
Infineon Technologies AG
Page 14 of 15
2003-Oct-01
Data Sheet BTS6510
Package and Ordering Code
All dimensions in mm
SMD TO 220-7,
BTS 6510 B
Ordering code
T&R:
Q67060-S6311
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Footprint:
Warnings
10.8
9.4
4.6
0.47
0.8
8.42
Infineon Technologies AG
16.15
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.
Page 15 of 15
2003-Oct-01