NPN Silicon RF Transistor ● BF 554 For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BF 554 CC Q62702-F1042 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 20 V Collector-base voltage VCB0 30 Emitter-base voltage VEB0 5 Collector current IC 30 mA Total power dissipation, TA ≤ 25 ˚C Ptot 280 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Rth JA ≤ Thermal Resistance Junction - ambient2) 1) 2) 450 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BF 554 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR) CE0 20 – – V Collector cutoff current VCB = 20 V, IE = 0 ICB0 – – 100 nA DC current gain IC = 1 mA, VCE = 10 V hFE 60 – 250 – Base-emitter voltage IC = 1 mA, VCE = 10 V VBE – 0.7 – V Transition frequency IC = 1 mA, VCE = 10 V, f = 100 MHz fT – 250 – MHz Collector-base capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Ccb – 0.6 – pF Noise figure IC = 1 mA, VCE = 10 V f = 200 kHz, gS = 2 mS f = 1 MHz, gS = 1.5 mS f = 100 MHz, gS = 10 mS F Output conductance IC = 1 mA, VCE = 10 V, f = 0.5...10 MHz g22e AC Characteristics Semiconductor Group 2 dB – – – 1.5 1.2 3 – – – – 4 – µS BF 554 Total power dissipation Ptot = f (TA) DC current gain hFE = f (IC) VCE = 10 V Collector current IC = f (VBE) VCE = 10 V Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10 Semiconductor Group 3 BF 554 Collector cutoff current ICB0 = f (TA) VCB = 20 V Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Collector-base capacitance Ccb = f (VCB) f = 1 MHz Noise figure F = f (f) IC = 1 mA, VCE = 10 V, RS = 60 Ω Semiconductor Group 4