IRF IRF7506

PD - 9.1268F
IRF7506
HEXFET® Power MOSFET
Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
Description
l
S1
G1
S2
G2
1
8
2
7
3
6
4
5
D1
VDSS = -30V
D1
D2
D2
RDS(on) = 0.27Ω
T o p V iew
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device
for applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will
allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA
cards.
MICRO8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
Units
-1.7
-1.4
-9.6
1.25
10
± 20
5.0
-55 to + 150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient„
Typ.
Max.
Units
–––
100
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97
IRF7506
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
0.92
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.039
–––
–––
–––
–––
–––
–––
–––
–––
7.5
1.3
2.5
9.7
12
19
9.3
180
87
42
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.27
VGS = -10V, ID = -1.2A ƒ
Ω
0.45
VGS = -4.5V, ID = -0.60A ƒ
–––
V
VDS = VGS , ID = -250µA
–––
S
VDS = -10V, ID = -0.60A
-1.0
VDS = -24V, VGS = 0V
µA
-25
VDS = -24V, VGS = 0V, TJ = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
11
ID = -1.2A
1.9
nC
VDS = -24V
3.7
VGS = -10V, See Fig. 6 and 9 ƒ
–––
VDD = -15V
–––
ID = -1.2A
ns
–––
RG = 6.2Ω
–––
RD = 12Ω, See Fig. 10 ƒ
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-1.25
–––
–––
-9.6
–––
–––
–––
–––
30
37
-1.2
45
55
A
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = -1.2A, VGS = 0V ƒ
TJ = 25°C, I F = -1.2A
di/dt = -100A/µs ƒ
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
‚ ISD ≤ -1.2A, di/dt ≤ -140A/µs, VDD ≤ V(BR)DSS , TJ ≤ 150°C
ƒ Pulse width ≤ 300µs – duty cycle ≤ 2%
„ Surface mounted on FR-4 board, t ≤ 10sec.
IRF7506
10
10
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
1
-3.0 V
20 µs P U LSE W IDTH
TJ = 25 °C
A
0.1
0.1
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
TOP
-I D , D ra in -to -S o u rc e C u rre n t (A )
-I D , D ra in -to -S o u rc e C u rre n t (A )
TOP
1
1
-3.0V
20 µs P U LSE W IDTH
TJ = 15 0°C
A
0.1
10
0.1
1
-VD S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
-I D , D rain -to- S our ce C urr ent ( A )
10
T J = 2 5 °C
T J = 1 5 0 °C
1
V DS = -1 0 V
2 0 µ s P U L S E W ID T H
0.1
3.0
4.0
5.0
6.0
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
10
-VD S , D rain-to-S ource V oltage (V )
7.0
A
I D = -1.2A
1.5
1.0
0.5
VG S = -10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF7506
V GS
C is s
C rs s
C os s
=
=
=
=
20
0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd
-V G S , G a te -to -S o u rce V o lta g e (V )
C , C a p a c ita n c e (p F )
400
300
C iss
C os s
200
C rs s
100
0
10
V DS = -24 V
V DS = -15 V
16
12
8
4
FO R TEST C IR C U IT
SEE F IGU R E 9
0
A
1
I D = -1.2 A
100
0
-VD S , Drain-to-Source V oltage (V)
4
6
8
10
A
12
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
-I D , D ra in C u rre n t (A )
-I S D , R e ve rs e D ra in C u rre n t (A )
2
TJ = 1 50 °C
TJ = 25 °C
1
VG S = 0 V
0.1
0.4
0.6
0.8
1.0
1.2
-VS D , S ource-to-Drain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.4
10
10µ s
10 0µs
1
1 ms
T A = 25 °C
T J = 15 0°C
S ing le Pulse
0.1
1
10m s
A
10
-V D S , D rain-to-S ource Voltage (V )
Fig 8. Maximum Safe Operating Area
100
IRF7506
RD
VDS
QG
VGS
-10V
QGS
D.U.T.
RG
QGD
+
VG
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
td(on)
12V
tr
t d(off)
tf
VGS
50KΩ
.2µF
10%
.3µF
D.U.T.
+VDS
VGS
90%
-3mA
IG
VDS
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response
(Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
0.01
1
0.1
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7506
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

• dv/dt controlled by RG
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[ VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 12. For P-Channel HEXFETS
[ ISD]
IRF7506
Package Outline
Micro8 Outline
Dimensions are shown in millimeters (inches)
LE A D A S S IG N M E N T S
3
- B -
D D D D
8 7
8 7 6
3
IN C H E S
D IM
D
D1 D1 D2 D2
6 5
8 7 6 5
5
S IN G L E
H
E
0 .2 5 (.0 1 0 )
-A -
M
A
M
DUAL
1 2 3 4
1
2 3 4
1 2 3 4
S1 G 1 S2 G 2
S S S G
e
6X
M IL L IM E T E R S
M IN
MAX
M IN
M AX
A
.0 3 6
.0 4 4
0 .9 1
1 .1 1
A1
.0 0 4
.0 0 8
0 .1 0
0 .2 0
B
.0 1 0
.0 1 4
0 .2 5
0 .3 6
C
.0 0 5
.0 0 7
0 .1 3
0 .1 8
D
.1 1 6
.1 2 0
2 .9 5
3 .0 5
e
.0 2 5 6 B A S IC
0 .6 5 B A S IC
e1
.0 1 2 8 B A S IC
0 .3 3 B A S IC
E
.1 1 6
.1 2 0
2 .9 5
3 .0 5
H
.1 8 8
.1 9 8
4 .7 8
5 . 03
L
.0 1 6
.0 2 6
0 .4 1
0. 6 6
θ
0°
6°
0°
6°
e 1
R E C O M M E N D E D F O O T P R IN T
θ
1 .0 4
( .0 4 1 )
8X
A
- C B
0 .1 0 (.0 0 4 )
A 1
8X
0 .0 8 (.0 0 3 )
M
C
L
8X
A S
B
S
0 .3 8 8 X
( .0 1 5 )
C
8X
3 .2 0
( .1 2 6 )
4 .2 4
5 .2 8
( .1 6 7 ) ( . 2 08 )
N OT ES :
1 D IM EN SION IN G A ND T OLE RA N C IN G P ER AN SI Y14 .5M -1982.
0. 6 5 6 X
( .0 2 5 6 )
2 C O N TR OLL IN G D IM EN SION : INC H .
3 D IM EN SION S DO N OT IN C LU D E M OLD F LAS H .
Part Marking Information
Micro8
A
D AT E C O D E ( YW W )
Y = L AS T D IG IT O F YEA R
W W = W E EK
E XAM PL E : T H IS IS AN IR F 75 0 1
4 51
7501
PA R T N U M B ER
TO P
IRF7506
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
T E R M IN AL N U M B E R 1
12 .3 ( .48 4 )
11 .7 ( .46 1 )
8 .1 ( . 31 8 )
7 .9 ( . 31 2 )
F EE D D IR E C T IO N
N O TE S :
1 . O U TLIN E CO N FO R M S TO E IA -48 1 & EIA- 541 .
2 . C O NTRO L LIN G D IM E NSIO N : MILL IM ETE R.
3 30. 00
(12 .99 2)
M A X.
14 .40 ( .56 6 )
12 .40 ( .48 8 )
NO TE S :
1. C O N T R O LLIN G D IM EN SIO N : M ILL IM E T ER .
2. O U T LIN E C O N F O R M S T O E IA -481 & EIA -54 1.
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IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97