PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through (NPT) Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability • Square RBSOA • UltraSoft Diode Recovery Characteristics • Positive VCE(on) Temperature Coefficient • Extended Lead TO-247AD Package VCE(on) typ. = 3.05V G VGE = 15V, IC = 20A, 25°C E N-channel Benefits • Benchmark Efficiency Above 20KHz • Optimized for Welding, UPS, and Induction Heating Applications • Rugged with UltraFast Performance • Low EMI • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation • Longer Leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.1) Continuous Collector Current (Fig.1) Pulsed Collector Current (Fig.3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (Fig.2) Maximum Power Dissipation (Fig.2) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw. Max. Units 1200 40 20 120 120 20 120 ± 20 300 120 -55 to + 150 V A V W °C 300, (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt ZθJC www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Transient Thermal Impedance Junction-to-Case Min. Typ. Max. ––– ––– ––– ––– ––– ––– ––– 0.24 ––– 6 (0.21) 0.42 0.83 ––– 40 ––– Units °C/W g (oz) (Fig.24) 1 12/14/99 IRGP20B120UD-E Electrical C h aracteristics @ T J = 25°C (u n less o th erw ise sp ecified ) P aram eter V (B R )C E S C o lle cto r-to -E m itte r B re a kd o w n V o lta g e M in. Typ. M ax. Units 1200 ∆V (B R )C E S / ∆Tj T e m p e ra tu re C o e ff. o f B re a kd o w n V o lta g e V V /°C V G E = 0 V , Ic = 1 m A ( 2 5 -1 2 5 o C ) + 1 .2 3 .0 5 3 .4 5 IC = 2 0 A , V G E = 1 5 V 5, 6 3 .3 7 3 .8 0 IC = 2 5 A , V G E = 1 5 V 7, 9 V o lta g e 4 .2 3 4 .8 5 IC = 4 0 A , V G E = 1 5 V 10 3 .8 9 4 .5 0 I C = 2 0 A , V G E = 1 5 V , T J = 1 2 5 °C 11 4 .3 1 5 .0 6 I C = 2 5 A , V G E = 1 5 V , T J = 1 2 5 °C 5 .0 6 .0 V G E (th) G a te T h re sh o ld V o lta g e ∆V G E (th) / ∆Tj T e m p e ra tu re C o e ff. o f T h re sh o ld V o lta g e g fe F o rw a rd T ra n sco n d u cta n ce 4 .0 1 5 .7 V o - 1 .2 1 3 .6 V mV/ C 1 7 .8 S 250 V FM Z e ro G a te V o lta g e C o lle cto r C u rre n t D io d e F o rw a rd V o lta g e D ro p 420 750 1482 2200 1 .6 7 1 .9 6 1 .7 6 2 .0 6 1 .7 3 2 .0 3 1 .8 7 IG E S Fig. C o lle cto r-to -E m itte r S a tu ra tio n V C E (on) IC E S Conditions V G E = 0 V ,I c = 2 5 0 µ A 9,10,11,12 o V C E = V G E , I C = 1 m A (2 5 -1 2 5 C ) V C E = 5 0 V , IC = 2 0 A , P W = 8 0 µ s VGE = 0 V, VCE = 1 2 0 0 V µA V G E = 0 V , V C E = 1 2 0 0 V , T J = 1 2 5 °C V G E = 0 V , V C E = 1 2 0 0 V , T J = 1 5 0 °C IC = 2 0 A V IC = 2 5 A 8 I C = 2 0 A , T J = 1 2 5 °C 2 .1 8 ±1 0 0 G a te -to -E m itte r L e a ka g e C u rre n t V C E = V G E , IC = 2 5 0 µ A I C = 2 5 A , T J = 1 2 5 °C nA VGE = ±20V Sw itch in g C h aracteristics @ T J = 25°C (u n less o th erw ise sp ecified ) P aram eter M in. Typ. M ax. Units 169 254 24 36 Qg T o ta l G a te ch a rg e (tu rn -o n ) Q ge G a te - E m itte r C h a rg e (tu rn -o n ) Q gc G a te - C o lle cto r C h a rg e (tu rn -o n ) 82 126 E on T u rn -O n S w itch in g L o ss 850 1050 E off T u rn -O ff S w itch in g L o ss 425 650 E tot T o ta l S w itch in g L o ss 1275 1800 E on T u rn -o n S w itch in g L o ss 1350 1550 E off T u rn -o ff S w itch in g L o ss 610 875 Conditions Fig. IC = 2 0 A nC 23 VCC = 6 0 0 V CT 1 VGE = 15V µJ IC = 2 0 A , V C C = 6 0 0 V CT 4 V G E = 1 5 V , R g = 5 Ω, L = 200µH WF 1 o T J = 2 5 C , E n e rg y lo sse s in clu d e ta il a n d d io d e re ve rse re co ve ry Ic = 2 0 A , V C C = 6 0 0 V µJ WF 2 13, 15 V G E = 1 5 V , R g = 5 Ω, L = 200µH CT 4 o E tot T o ta l S w itch in g L o ss 1960 2425 td (o n ) T u rn - o n d e la y tim e 50 65 tr R ise tim e 20 30 td (o ff) T u rn - o ff d e la y tim e 204 230 tf F a ll tim e 24 35 C ies In p u t C a p a cita n ce C oes O u tp u t C a p a cita n ce C res R e ve rse T ra n sfe r C a p a cita n ce T J = 1 2 5 C , E n e rg y lo sse s in clu d e ta il a n d d io d e re ve rse re co ve ry Ic = 2 0 A , V C C = 6 0 0 V ns 14, 16 V G E = 1 5 V , R g = 5 Ω, L = 200µH CT 4 o WF 1 TJ = 125 C WF 2 2200 VGE = 0V 210 pF 85 VCC = 3 0 V 22 f = 1 .0 M H z o T J = 1 5 0 C , Ic = 1 2 0 A R BSO A R e ve rse b ia s sa fe o p e ra tin g a re a WF 1 & 2 FU L L S Q U A R E 4 VCC = 1 0 0 0 V, VP = 1 2 0 0 V CT 2 R g = 5 Ω, V G E = + 1 5 V to 0 V o 10 TJ = 150 C CT 3 VCC = 9 0 0 V, VP = 1 2 0 0 V WF 4 ---- ---- µs 1600 2100 µJ TJ = 125 C ns V C C = 6 0 0 V , Ic = 2 0 A A V G E = 1 5 V , R g = 5 Ω, L = 200µH SC SO A S h o rt C ircu it S a fe O p e ra tin g A re a E rec R e ve rse re co ve ry e n e rg y o f th e d io d e trr D io d e R e ve rse re co ve ry tim e Irr P e a k R e ve rse R e co ve ry C u rre n t 32 In te rn a l E m itte r In d u cta n ce 13 R g = 5 Ω, V G E = + 1 5 V to 0 V Le 2 300 36 nH o 17,18,19 20, 21 CT 4, WF 3 M e a su re d 5 m m fro m th e p a cka g e . www.irf.com IRGP20B120UD-E F ig .2 - P o w e r D is s ip a tio n v s . C a s e T e m p e ra tu re Fig.1 - Maximum DC Collector Current vs. Case Temperature 50 320 45 280 40 240 35 200 (W ) to t 25 160 P I C (A) 30 20 120 15 80 10 40 5 0 0 0 40 80 120 160 0 40 T C (°C) 80 120 160 T C (°C ) F ig .4 - R e v e rs e B ia s S O A T j = 1 5 0 °C , V G E = 1 5 V Fig.3 - Forward SOA T C =25°C; Tj < 150°C 1000 1000 PULSED 2µs 100 10µs 100 (A ) C 10 1ms I IC (A) 100µs 10 1 10ms DC 0.1 1 1 www.irf.com 10 100 V CE (V) 1000 10000 1 10 V 100 (V ) 1000 10000 CE 3 IRGP20B120UD-E Fig.6 - Typical IGBT Output Characteristics Tj=25°C; tp=300µs Fig.5 - Typical IGBT Output Characteristics Tj= -40°C; tp=300µs 60 60 V GE = 15V V GE = 12V V GE = 12V 45 V GE = 10V 45 V GE = 10V 40 V GE = 8V 40 V GE = 8V 35 (A) 35 30 C 30 25 25 I I V GE = 15V 50 C (A) 50 V GE = 18V 55 V GE = 18V 55 20 20 15 15 10 10 5 5 0 0 0 1 2 3 4 5 6 0 V CE (V) Fig.7 - Typical IGBT Output Characteristics Tj=125°C; tp=300µs 60 55 50 45 40 45 5 6 40 (A) 35 30 35 30 F 25 I I 3 4 V CE (V) - 40°C 25°C 125°C 50 C (A) 55 V GE = 10V V GE = 8V 2 Fig.8 - Typical Diode Forward Characteristic tp=300µs 60 V GE = 18V V GE = 15V V GE = 12V 1 25 20 20 15 15 10 10 5 5 0 0 0 1 2 3 V CE (V) 4 4 5 6 0 1 2 V F (V) 3 4 www.irf.com IRGP20B120UD-E Fig.10 - Typical V CE vs V GE Tj= 25°C 20 20 18 18 16 16 14 14 12 12 10 V CE ( V ) V CE ( V ) Fig.9 - Typical V CE vs V GE Tj= -40°C I CE =10A I CE =20A I CE =40A 8 10 8 6 6 4 4 2 2 0 0 6 8 10 12 14 V GE (V) 16 18 20 6 10 12 14 V GE (V) 16 18 20 18 225 16 200 14 175 12 150 Tj=25°C Tj=125°C (A) 250 125 C I CE =10A I CE =20A I CE =40A I V CE ( V ) 20 8 8 Fig.12 - Typ. Transfer Characteristics V CE =20V; tp=20µs Fig.11 - Typical V CE vs V GE Tj= 125°C 10 I CE =10A I CE =20A I CE =40A 100 6 75 4 50 2 25 0 0 Tj=125°C Tj=25°C 6 www.irf.com 8 10 12 14 V GE (V) 16 18 20 0 4 8 12 V GE (V) 16 20 5 IRGP20B120UD-E Fig.13 - Typical Energy Loss vs Ic Tj=125°C; L=200µH; V CE =600V; Rg=22 Ω ; V GE =15V Fig.14 - Typical Switching Time vs Ic Tj=125°C; L=200µH; V CE =600V; Rg=22 Ω ; V GE =15V 6000 1000 Eon 5000 4000 t (nS) Energy (µJ) tdoff 3000 Eoff 100 tr tdon 2000 tf 1000 10 0 0 10 20 30 I C (A) 40 0 50 20 30 40 50 I C (A) Fig.15 - Typical Energy Loss vs Rg Tj=125°C; L=200µH; V CE =600V; I CE =20A; V GE =15V 3000 10 Fig.16 - Typical Switching Time vs Rg Tj=125°C; L=200µH; V CE =600V; I CE =20A; V GE =15V 1000 2800 Eon tdoff 2600 2400 2000 1800 1600 Eoff 1400 1200 t (nS) Energy (uJ) 2200 tdon 100 tr 1000 tf 800 600 400 200 0 10 0 5 10 15 20 25 30 35 40 45 50 55 Rg (ohms) 6 0 5 10 15 20 25 30 35 40 45 50 55 Rg (ohms) www.irf.com IRGP20B120UD-E Fig.18 - Typical Diode I RR vs Rg Tj=125°C; I F =20A Fig.17 - Typical Diode I RR vs I F Tj=125°C 45 45 40 40 35 35 30 25 IRR ( A ) Rg=5 Ω Rg=10 Ω 20 I RR (A) 30 Rg=22 Ω 20 15 15 Rg=51 Ω 10 25 10 5 5 0 0 0 10 20 30 I F (A) 40 50 0 60 Fig.20 - Typical Diode Q RR V CC =600V; V GE =15V; Tj=125°C V CC =600V; V GE =15V I F =20A; Tj=125°C 40 10 15 20 25 30 35 40 45 50 55 Rg (ohms) Fig.19 - Typical Diode I RR vs dI F /dt 45 5 7000 6500 Rg=5 Ω 6000 35 Rg=10 Ω 5Ω 51 Ω 5500 50A 30 5000 Rg=22 Ω 25 Q RR ( n C ) I RR ( A ) 22 Ω 10 Ω Rg=51 Ω 20 40A 4500 30A 4000 25A 3500 20A 15 3000 10 10A 2500 5 2000 0 1500 0 www.irf.com 200 400 600 800 dI F / dt (A/µs) 1000 1200 0 200 400 600 800 1000 1200 dI F / dt (A/µs) 7 IRGP20B120UD-E Fig.21 - Typ. Diode E rec vs. I F Tj=125°C 2800 2600 5Ω 2400 10 Ω 22 Ω Energy (uJ) 2200 51 Ω 2000 1800 1600 1400 1200 1000 800 0 10 20 30 40 50 60 I F (A) Fig.23 - Typ. Gate Charge vs. V GE I C =20A; L=600µH Fig.22 - Typical Capacitance vs V CE V GE =0V; f=1MHz 16 10000 600V 14 C ies 800V 1000 10 V GE ( V ) CapacItance (pF) 12 C oes 6 100 4 C res 2 0 10 0 20 40 60 V CE (V) 8 8 80 100 0 40 80 120 160 200 Q G , Total Gate Charge (nC) www.irf.com IRGP20B120UD-E Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case θ 10 1 D =0.5 0.2 0.1 0.1 0.05 P DM 0.02 0.01 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + T C SINGLE PULSE 0.001 0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000 t 1 , Rectangular Pulse Duration (sec) www.irf.com 9 IRGP20B120UD-E Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit L L VCC DUT 80 V DUT 1000V 0 Rg 1K Fig. CT.4 - Switching Loss Circuit Fig. CT.3 - S.C. SOA Circuit d iod e cla m p / DUT D riv er D C L 900V - 5V DUT / D R IV E R DUT VCC Rg Fig. CT.5 - Resistive Load Circuit R = DUT VCC IC M VCC Rg 10 www.irf.com IRGP20B120UD-E Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125°C using Fig. CT.4 1000 Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125°C using Fig. CT.4 25 800 80 600 60 90% ICE 800 20 600 90% test current 15 400 ICE ( A ) 10 40 tr V CE ( V ) 400 ICE ( A ) V CE ( V ) tf TEST CURRENT 200 5% VCE 200 20 10% test current 5 5% VCE 5% ICE 0 0 0 0 Eon Loss Eof f Loss -200 -5 -0.2 0.0 0.2 0.4 0.6 -200 0.8 -20 -0.2 -0.1 t i me (µs) 0.0 0.1 0.2 0.3 t i me (µs) Fig. WF.3 - Typ. Diode Recovery Waveform @ Tj=125°C using Fig. CT.4 600 30 400 20 Fig. WF.4 - Typ. S.C. Waveform @ TC=150°C using Fig. CT.3 1200 250 1000 200 800 150 600 100 400 50 200 0 QRR 10 0 Peak IRR -200 -10 10% Peak IRR -400 -20 -600 -30 -800 -40 -0.2 0.0 0.2 0.4 t i me (µs) www.irf.com V CE (V ) 0 ICE ( A ) V CE ( V ) tRR ICE ( A ) 200 0.6 0.8 0 -50 -10 0 10 20 30 t i me (µs) 11 IRGP20B120UD-E TO-247AD Case Outline and Dimensions ∆ Ρ Γ . Νο: WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 12/99 12 www.irf.com