BSL307SP Preliminary data OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS(on) 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A P-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5 6 Type Package Ordering Code Marking BSL307SP P-TSOP-6-1 Q67042-S4067 sPC Drain pin 1,2, 5,6 Gate pin 3 Source pin 4 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -5.5 TA=70°C -4.4 ID puls -22 EAS 44 mJ dv/dt -6 kV/µs Gate source voltage VGS ±20 V Power dissipation Ptot 2 W -55... +150 °C Pulsed drain current TA=25°C Avalanche energy, single pulse ID =-5.5 A , VDD =-25V, RGS =25Ω Reverse diode dv/dt IS =-5.5A, VDS =24V, di/dt=200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2001-12-12 BSL307SP Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 50 - - 230 - - 62.5 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -30 - - VGS(th) -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS ID =-40µA Zero gate voltage drain current µA IDSS VDS =-30V, VGS =0, Tj =25°C - -0.1 -1 VDS =-30V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 52 74 mΩ RDS(on) - 31 43 Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-4.2A Drain-source on-state resistance VGS =-10V, ID =-5.5A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤ 5 sec. Page 2 2001-12-12 BSL307SP Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 4.7 9.4 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-4.4A Input capacitance Ciss VGS =0, VDS =-25V, - 805 - Output capacitance Coss f=1MHz - 234 - Reverse transfer capacitance Crss - 195 - Turn-on delay time td(on) VDD =-15V, VGS =-10V, - 7.3 11 Rise time tr ID =-1A, RG=6Ω - 8.4 12.6 Turn-off delay time td(off) - 36.4 55 Fall time tf - 29 44 - -2 -2.5 - -8.2 -12.3 - -23.4 -29 V(plateau) VDD =-24V, ID =-5.5A - -2.8 - V IS - - -5.5 A - - -22 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-24V, ID =-5.5A VDD =-24V, ID =-5.5A, nC VGS =0 to -10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, |IF | = |ID | - -0.88 -1.3 V Reverse recovery time trr VR =-15V, |IF | = |lD |, - 16.6 21 ns Reverse recovery charge Qrr diF /dt=100A/µs - 6.2 7.8 nC Page 3 2001-12-12 BSL307SP Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 10 V 2.2 BSL307SP -6 A W -5 1.8 -4.5 1.6 -4 1.4 ID Ptot BSL307SP -3.5 1.2 -3 1 -2.5 0.8 -2 0.6 -1.5 0.4 -1 0.2 -0.5 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 2 BSL307SP 10 2 -10 1 R (o DS VD S tp = 90.0µs 100 µs n) 10 1 Z thJS = BSL307SP K/W /I D A 160 TA 3 Safe operating area -10 °C ID 1 ms -10 0 10 0 10 -1 10 ms D = 0.50 0.20 10 -2 0.10 0.05 -10 -1 0.02 DC 10 -3 0.01 single pulse -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2001-12-12 BSL307SP Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 50 0.1 Vgs = -5.5V Vgs = -6V Ω Vgs = -5V A Vgs = -4.5V Vgs = -4V 0.08 30 RDS(on) Vgs = -7V Vgs = -8V Vgs = -10V - ID Vgs = -3.5V Vgs = -4.5V 0.07 0.06 0.05 20 0.04 Vgs = -4V 0.03 10 Vgs= - 3V Vgs = - 3.5V Vgs = - 4.5V Vgs= - 6V Vgs = - 10V 0.02 Vgs = -3.5V 0.01 Vgs = -3V 0 0 1 2 3 4 5 6 7 8 V 0 0 10 5 10 15 20 25 30 35 40 - V DS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: tp = 80 µs 20 50 15 S g fs A - ID A - ID 12 10 7.5 8 5 4 2.5 0 0 1 2 3 V 5 - V GS 0 0 5 10 A 20 - ID Page 5 2001-12-12 BSL307SP Preliminary data 9 Drain-source on-resistance 10 Typ. gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -5.5 A, VGS = -10 V parameter: VGS = VDS 2.4 60 V mΩ - VGS(th) RDS(on) 2 50 45 1.8 98% 1.6 98% 1.4 40 typ. 1.2 35 1 30 typ. 0.8 25 20 -60 2% 0.6 -20 20 60 100 °C 0.4 -60 160 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 BSL307SP A pF C IF -10 1 Ciss 10 3 -10 0 Tj = 25 °C typ Coss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) Crss 10 2 0 5 10 15 20 V 30 - VDS -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2001-12-12 BSL307SP Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -5.5 A |VGS| = f (QGate ) VDD = -25 V, RGS = 25 Ω parameter: ID = -5.5 A pulsed 45 18 mJ V 14 - VGS E AS 35 30 12 25 10 20 8 15 6 10 4 5 2 0 25 50 75 100 °C 150 Tj 0 0 0.2 VDS max. 0.5 VDS max. 0.8 VDS max. 5 10 15 20 25 nC 35 |QGate| 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -36 BSL307SP V (BR)DSS V -34 -33 -32 -31 -30 -29 -28 -27 -60 -20 20 60 100 °C 180 Tj Page 7 2001-12-12 Preliminary data BSL307SP Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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