PD-91646C
IRF7521D1
PRELIMINARY
FETKY MOSFET / Schottky Diode
●
●
●
●
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Co-packaged HEXFET® Power MOSFET
and Schottky Diode
N-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
Micro8TM Footprint
A
A
S
G
1
8
K
2
7
K
3
6
4
5
VDSS = 20V
RDS(on) = 0.135Ω
D
D
Schottky Vf = 0.39V
T op V ie w
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
Micro8
TM
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the Micro8TM
an ideal device for applications where printed circuit board space is at a premium.
TM
The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA cards.
TM
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current ➀
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
Maximum
Units
2.4
1.9
19
1.3
0.8
10
± 12
5.0
-55 to +150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum
Units
100
°C/W
Junction-to-Ambient ➃
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.
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01/29/99
2
IRF7521D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
20
–––
–––
0.70
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.085
0.12
–––
–––
–––
–––
–––
–––
5.3
0.84
2.2
5.7
24
15
16
260
130
61
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
0.135
VGS = 4.5V, ID = 1.7A
Ω
0.20
VGS = 2.7V, ID = 0.85A
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 10V, ID = 0.85A
1.0
VDS = 16V, VGS = 0V
µA
25
VDS = 16V, VGS = 0V, TJ = 125°C
100
VGS = 12V
nA
-100
VGS = -12V
8.0
ID = 1.7A
1.3
nC
VDS = 16V
3.3
VGS = 4.5V, See Fig. 6
–––
VDD = 10V
–––
ID = 1.7A
ns
–––
RG = 6.0Ω
–––
RD = 5.7Ω,
–––
VGS = 0V
–––
pF
VDS = 15V
–––
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– 1.3
A
––– 14
––– 1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V
39
59
ns
TJ = 25°C, IF = 1.7A
37
56
nC di/dt = 100A/µs
Schottky Diode Maximum Ratings
IF(av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units.
Conditions
1.9
50% Duty Cycle. Rectangular Wave, TA = 25°C
A
See Fig.14
1.4
TA = 70°C
120
5µs sine or 3µs Rect. pulse
Following any rated
11
10ms sine or 6ms Rect. pulse load condition &
A
with VRRM applied
Schottky Diode Electrical Specifications
VFM
Parameter
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.50
0.62
V
0.39
0.57
0.02
mA
8
92
pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 20V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7521D1
Power Mosfet Characteristics
100
100
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOT TOM 1.5V
10
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
1
0.1
1 .5V
20 µ s P U LS E W ID TH
TJ = 2 5°C
A
0.01
0.1
1
I , D rain-to-Source Current (A )
D
I , D ra in-to -S o urc e C u rren t (A )
D
TO P
10
1
1 .5V
0.1
2 0µ s P U L S E W ID TH
TJ = 15 0°C
A
0.01
10
0.1
1
V D S , D rain-to-S ourc e V oltage (V )
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
I D , D ra in -to-S ourc e C urrent (A)
100
10
T J = 1 5 0 °C
T J = 2 5°C
1
V DS = 10V
2 0 µ s P UL S E W ID TH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
V G S , G ate-to -So urce Voltag e (V)
Fig 3. Typical Transfer Characteristics
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V DS , D rain-to-S ource V oltage (V )
A
I D = 1.7A
1.5
1.0
0.5
V G S = 4.5 V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
A
IRF7521D1
Power Mosfet Characteristics
V GS
C is s
C rs s
C o ss
400
=
=
=
=
10
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
-V G S , G ate-to-S ource V oltage (V )
500
C , Capacitance (pF)
C iss
300
C oss
200
C rss
100
0
A
1
10
6
4
2
100
FO R TE S T CIR C U IT
S E E FIG U R E 9
0
2
4
6
8
V D S , D rain-to-S ourc e V oltage (V )
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
A
10
100
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
I D , Drain C urrent (A )
I S D , R everse Drain C urrent (A )
8
0
100
10
T J = 1 50 °C
T J = 25 °C
1
10
100µs
1m s
1
10m s
V G S = 0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V S D , S ourc e-to-D rain V oltage (V )
4
I D = 1 .7A
V D S = 16 V
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.8
0.1
T A = 25 °C
T J = 15 0°C
S ing le P u lse
0.1
A
1
10
100
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
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IRF7521D1
Power Mosfet Characteristics
Thermal Response (Z thJC )
1000
100
D = 0.50
0.20
0.10
10
0.05
P DM
0.02
t1
0.01
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.12
1.0
0.8
VGS = 2.5V
0.6
0.4
0.2
V
V GS == 5.0V
4.0V
0.0
A
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
I D , D rain C urrent (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
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RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.10
I D = 1.7A
0.08
0.06
0.04
A
0.0
2.0
4.0
6.0
8.0
V G S , Gate-to-Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
IRF7521D1
Schottky Diode Characteristics
10
100
TJ = 150°C
Reverse Current - IR (mA)
125°C
1
100°C
75°C
0.1
50°C
0.01
25°C
0.001
A
0.0001
0
4
8
12
16
20
1
Reverse Voltage - V R (V)
T J = 1 50 °C
T J = 1 25 °C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
T J = 2 5 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Forwa
rd VVotage
o lta ge DDrop
ro p -- VVFM
(V )
Forward
F ( V)
Fig. 12 -Typical Forward Voltage Drop Characteristics
A llow ab le A m b ient Tem p era ture - (°C )
In sta n tan e o us Fo rw a rd C urre nt - I F (A )
10
160
V r = 20V
R t hJA = 100°C/W
Square wave
140
120
100
80
D
D
D
D
D
60
40
= 3/4
= 1/2
= 1/3
= 1/4
= 1/5
DC
20
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A v era ge Forw ard C urrent - I F(AV ) (A )
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7521D1
Micro8TM Package Details
LE AD A SSIGN M EN TS
INC H ES
D IM
D
M ILLIME TE RS
M IN
M AX
MIN
M AX
A
.0 36
.044
0 .91
1.11
A1
.0 04
.008
0 .10
0.20
B
.0 10
.014
0 .25
0.36
C
.005
.007
0.13
0.18
D
.116
.120
2.95
3.05
e
.0256 B ASIC
0.65 BAS IC
e1
.0128 B ASIC
0.33 BAS IC
E
.1 16
H
e
L
6X
θ
3
-B-
D D D D
D1 D1 D2 D2
8 7 6 5
8 7 6 5
S IN G LE
D UAL
1 2 3 4
1 2 3 4
S S S G
S 1 G 1 S2 G 2
8 7 6 5
3
H
E
0.2 5 (.010)
-A-
M
A
M
1 2 3 4
.120
2.95
3.0 5
.188
.198
4.78
5.03
.016
.026
0.4 1
0.66
0°
6°
0°
6°
e1
RE C OM M E ND ED F O O TP RIN T
θ
1.04
( .0 41 )
8X
A
-C-
0.10 (.004)
B
A1
8X
0.0 8 (.0 03)
M
C A S
L
8X
B S
0.38
8X
( .015 )
C
8X
3.2 0
( .126 )
4.2 4
5.2 8
( .167 ) ( .2 08 )
N O TE S :
1 DIME N S ION IN G A N D T O L E RA N C IN G P E R A N S I Y 1 4 .5M -1 9 8 2 .
2 CO N T R OL L IN G DIME N S ION : INC H .
3 DIME N S ION S D O N O T INC L U D E M O L D F L A S H .
0.65 6X
( .02 56 )
Part Marking
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IRF7521D1
Micro8TM Tape & Reel
T E R M IN AL N U M B E R 1
12 .3 ( .4 8 4 )
11 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
FE E D D IR E C TIO N
N OTES:
1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA - 5 4 1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
3 3 0 .0 0
(1 2 .9 9 2 )
MAX.
14 .4 0 ( .5 6 6 )
12 .4 0 ( .4 8 8 )
NO TES :
1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S TO E IA -4 8 1 & E IA -5 4 1 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice . 01/99
8
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