IRF IRF7526D1

PD -91649C
IRF7526D1
FETKY TM MOSFET & Schottky Diode
l
l
l
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Co-packaged HEXFET Power
MOSFET and Schottky Diode
P-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
Micro8TM Footprint
Description
A
A
S
G
1
8
K
2
7
K
3
6
4
5
D
VDSS = -30V
RDS(on) = 0.20Ω
D
Schottky Vf = 0.39V
T op V ie w
TM
The FETKY
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
TM
The new Micro8 package, with half the footprint area of the standard SO-8, provides
TM
the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal
device for applications where printed circuit board space is at a premium. The low
TM
profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8
TM
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current ➀
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
Maximum
-2.0
-1.6
-16
1.25
0.8
10
± 20
-5.0
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient ➃
Maximum
Units
100
°C/W
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
‚ ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ Pulse width ≤ 300µs – duty cycle ≤ 2%
„ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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5/7/99
IRF7526D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-30
–––
–––
-1.0
0.94
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.17
0.30
–––
–––
–––
–––
–––
–––
7.5
1.3
2.5
9.7
12
19
9.3
180
87
42
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
0.20
VGS = -10V, ID = -1.2A ƒ
Ω
0.40
VGS = -4.5V, ID = -0.60A ƒ
–––
V
VDS = VGS, I D = -250µA
–––
S
VDS = -10V, I D = -0.60A
-1.0
VDS = -24V, VGS = 0V
µA
-25
VDS = -24V, VGS = 0V, T J = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
11
ID = -1.2A
1.9
nC VDS = -24V
3.7
VGS = -10V, See Fig. 6 ƒ
–––
VDD = -15V
–––
ID = -1.2A
ns
–––
RG = 6.2Ω
–––
RD = 12Ω, ƒ
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
30
37
Max. Units
Conditions
-1.25
A
-9.6
-1.2
V
TJ = 25°C, IS = -1.2A, VGS = 0V
45
ns
TJ = 25°C, I F = -1.2A
55
nC di/dt = 100A/µs ƒ
Schottky Diode Maximum Ratings
IF(av)
I SM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
1.9
A
1.3
120
11
A
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
See Fig. 14
TA = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Schottky Diode Electrical Specifications
VFM
Parameter
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.50
0.62
V
0.39
0.57
0.06
mA
16
92
pF
3600 V/µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 30V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7526D1
Power Mosfet Characteristics
10
10
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-I D , Drain-to-S ource Current (A )
-I D , Drain-to-S ource Current (A )
TOP
1
-3.0 V
2 0µ s P U L S E W ID TH
TJ = 25 °C
A
0.1
0.1
1
1
-3.0 V
2 0µ s P U L S E W ID TH
TJ = 15 0°C
A
0.1
10
0.1
1
-V D S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e
(N o rm alize d)
-I D , D rain-to -So urc e C urre nt (A )
10
TJ = 2 5°C
T J = 1 5 0 °C
1
V D S = -1 0 V
2 0 µ s P U L S E W ID T H
0.1
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
-VG S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
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-V D S , D rain-to-S ource V oltage (V )
A
I D = -1 .2A
1.5
1.0
0.5
VG S = -10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T J , J unc tion T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7526D1
Power Mosfet Characteristics
20
V GS
C is s
C rs s
C oss
=
=
=
=
0V,
f = 1MHz
C g s + C g d , C d s S H O R TE D
C gd
C ds + C gd
-V G S , G ate-to-S ource V oltage (V )
400
C , Capacitance (pF)
300
C iss
C o ss
200
C rss
100
0
10
V D S = -24 V
V D S = -15 V
16
12
8
4
FO R TE S T CIR C U IT
S E E FIG U R E 9
0
A
1
I D = -1 .2 A
0
100
2
4
6
8
10
A
12
Q G , Total G ate C harge (nC )
-VD S , D rain-to-S ourc e V oltage (V )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
-I D , D rain C urrent (A)
-IS D , R everse Drain C urrent (A )
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
T J = 1 50 °C
1
T J = 2 5 °C
V G S = 0V
0.1
0.4
0.6
0.8
1.0
1.2
-VS D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
1.4
10
100µs
1
1m s
10m s
T A = 25 °C
T J = 15 0°C
S ing le P u lse
0.1
1
A
10
100
-V D S , D rain-to-S ourc e V oltage (V )
Fig 8. Maximum Safe Operating Area
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IRF7526D1
Power Mosfet Characteristics
Thermal Response (Z thJC )
1000
100
D = 0.50
0.20
0.10
10
0.05
P DM
0.02
t1
0.01
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1.5
1.0
V G S = -4.5V
0.5
V G S = -1 0V
0.0
A
0
1
2
3
4
-ID , D rain C urrent (A )
Fig 10. Typical On-Resistance Vs. Drain
Current
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0.60
0.50
0.40
I
= -2.0A
0.30
0.20
0.10
3
6
9
12
15
-V GS , G ate-to-S ourc e V oltage (V )
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
A
IRF7526D1
Schottky Diode Characteristics
10
100
TJ = 15 0 °C
Reverse Current - IR (mA)
1 2 5 °C
1
1 0 0°C
7 5°C
0.1
5 0 °C
0.01
2 5 °C
0.001
A
0.0001
0
5
10
15
20
25
30
R eve rse V o lta ge - V R (V )
1
T J = 1 50°C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
T J = 1 25°C
T J = 2 5°C
0.1
0.0
0.2
0.4
0.6
0.8
FForward
orwa rd VVoltage
oltage D
ro p -- V
V F M(V)(V )
Drop
F
1.0
A llow ab le Am b ient Tem perature - (°C )
Instantan eo us F orw a rd C urrent - I F (A)
10
160
V r = 8 0 % R ated
R t hJA = 1 0 0 °C /W
Sq uare w ave
140
120
100
80
D
D
D
D
D
60
40
= 3 /4
= 1 /2
= 1 /3
= 1 /4
= 1 /5
DC
20
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A v era ge F orw ard C urrent - I F(A V ) (A )
Fig. 12 -Typical Forward Voltage Drop
Characteristics
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7526D1
Micro8TM Package Details
LE AD A SSIGN M EN TS
INC H ES
D IM
D
M ILLIME TE RS
M IN
M AX
MIN
M AX
A
.0 36
.044
0 .91
1.11
A1
.0 04
.008
0 .10
0.20
B
.0 10
.014
0 .25
0.36
C
.005
.007
0.13
0.18
D
.116
.120
2.95
3.05
e
.0256 B ASIC
0.65 BAS IC
e1
.0128 B ASIC
0.33 BAS IC
E
.1 16
.120
2.95
3.0 5
H
.188
.198
4.78
5.03
e
L
.016
.026
0.4 1
0.66
6X
θ
0°
6°
3
-B-
D D D D
D1 D1 D2 D2
8 7 6 5
8 7 6 5
S IN G LE
D UAL
1 2 3 4
1 2 3 4
8 7 6 5
3
H
E
0.2 5 (.010)
-A-
M
A
M
1 2 3 4
S S S G
S 1 G 1 S2 G 2
0°
6°
e1
RE C OM M E ND ED F O O TP RIN T
θ
1.04
( .0 41 )
8X
A
-CB
0.10 (.004)
A1
8X
0.0 8 (.0 03)
M
C A S
L
8X
B S
0.38
8X
( .015 )
C
8X
3.2 0
( .126 )
4.2 4
5.2 8
( .167 ) ( .2 08 )
N O TE S :
1 DIME N S ION IN G A N D T O L E RA N C IN G P E R A N S I Y 1 4 .5M -1 9 8 2 .
2 CO N T R OL L IN G DIME N S ION : INC H .
3 DIME N S ION S D O N O T INC L U D E M O L D F L A S H .
0.65 6X
( .02 56 )
Part Marking
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IRF7526D1
Micro8TM Tape & Reel
T E R M IN AL N U M B E R 1
12 .3 ( .4 8 4 )
11 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
FE E D D IR E C TIO N
N OTES:
1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA - 5 4 1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
3 3 0 .0 0
(1 2 .9 9 2 )
MAX.
14 .4 0 ( .5 6 6 )
12 .4 0 ( .4 8 8 )
NO TES :
1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S TO E IA -4 8 1 & E IA -5 4 1 .
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http://www.irf.com/
Data and specifications subject to change without notice . 5/99
8
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