IRF IRF7704PBF

PD- 96025
IRF7704PbF
HEXFET® Power MOSFET
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Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
Lead-Free
VDSS
RDS(on) max (mW)
ID
-40V
46@VGS = -10V
-4.6A
74@VGS = -4.5V
-3.7A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
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TSSOP-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-40
-4.6
-3.7
-19
1.5
1.0
12
± 20
-55 to + 150
V
mW/°C
V
°C
Max.
Units
83
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
02/06/06
IRF7704PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-40
–––
–––
–––
-1.0
7.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.03
–––
–––
–––
–––
–––
–––
–––
–––
25
10
9.5
25
360
190
100
3150
250
200
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, I D = -1mA
46
VGS = -10V, ID = -4.6A ‚
mΩ
74
VGS = -4.5V, ID = -3.7A ‚
-3.0
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -4.6A
-10
VDS = -32V, VGS = 0V
µA
-25
VDS = -32V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
38
ID = -4.6A
15
nC
VDS = -15V
14
VGS = -4.5V
–––
VDD = -20V ‚
–––
ID = -1.0A
ns
–––
RG = 6.0Ω
–––
VGS = -4.5V
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-1.5
–––
–––
-19
–––
–––
–––
–––
29
41
-1.2
44
62
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.5A, VGS = 0V
TJ = 25°C, I F = -1.5A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on 1 in square Cu board
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7704PbF
1000
100
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
100
10
1
0.1
-2.70V
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
1
100
2.0
1.0
T J = 25°C
0.1
VDS = -25V
20µs PULSE WIDTH
3.5
4.0
4.5
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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5.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (Α)
T J = 150°C
3.0
1
10
100
Fig 2. Typical Output Characteristics
100.0
2.5
20µs PULSE WIDTH
TJ = 150 °C
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.0
-2.70V
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
10.0
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
TOP
TOP
ID = 4.6A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7704PbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
4000
Ciss
Coss = Cds + Cgd
3000
2000
1000
Coss
Crss
-VGS , Gate-to-Source Voltage (V)
12
5000
8
6
4
2
0
10
100
0
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I D, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
-V DS, Drain-to-Source Voltage (V)
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS =-32V
VDS =-20V
10
0
1
ID = -4.6A
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1msec
1
10msec
0.1
1.2
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7704PbF
5.0
V DS
VGS
-ID , Drain Current (A)
4.0
RD
D.U.T.
RG
+
VDD
3.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
td(on)
0.0
tr
t d(off)
tf
VGS
25
50
75
100
125
10%
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to -Source On Resistance ( Ω )
IRF7704PbF
0.08
0.06
0.04
ID = -4.6A
0.02
0.0
4.0
8.0
12.0
16.0
0.070
0.060
VGS = -4.5V
0.050
0.040
VGS = -10V
0.030
0.020
0
4
-VGS, Gate -to -Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
8
12
16
20
-I D , Drain Current (A)
Fig 12. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF7704PbF
80
60
2.5
ID = -250µA
Power (W)
-V GS(th) Gate threshold Voltage (V)
3.0
40
2.0
20
0
1.5
-75
-50
-25
0
25
50
75
100
125
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
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150
0.001
0.010
0.100
1.000
10.000
100.000
Time (sec)
Fig 15. Typical Power Vs. Time
7
IRF7704PbF
TSSOP8 Package Outline
Dimensions are shown in millimeters (inches)
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IRF7704PbF
TSSOP8 Part Marking Information
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TSSOP-8 Tape and Reel Information
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Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/06
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