SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSS 149 VDS 200 V ID 0.35 A RDS(on) 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code BSS 149 Q67000-S252 1 Tape and Reel Information 2 3 Pin Configuration Marking Package E6325: 2000 pcs/carton; Ammopack 1 2 3 G D S SS149 TO-92 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 200 V Drain-gate voltage, RGS = 20 kΩ VDGR 200 Gate-source voltage VGS ± 14 Gate-source peak voltage, aperiodic Vgs ± 20 Continuous drain current, TA = 34 ˚C ID 0.35 A Pulsed drain current, TA = 25 ˚C ID puls 1.05 Max. power dissipation, TA = 25 ˚C Ptot 1.0 W Operating and storage temperature range Tj, Tstg – 55 … + 150 ˚C Thermal resistance, chip-ambient (without heat sink) RthJA ≤ 125 K/W DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Semiconductor Group 1 04.97 BSS 149 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 200 – – − 1.8 − 1.2 − 0.7 Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA V(BR)DSS Gate threshold voltage VDS = 3 V, ID = 1 mA VGS(th) Drain-source cutoff current VDS = 200 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C IDSS Gate-source leakage current VGS = 20 V, VDS = 0 IGSS Drain-source on-resistance VGS = 0 V, ID = 0.05 A RDS(on) V µA – – – – 0.2 200 – 10 100 – 2.5 3.5 0.4 0.6 – nA Ω Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 0.35 A gfs Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss Turn-on time ton, (ton = td(on) + tr) VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω, ID = 0.29 A Turn-off time toff, (toff = td(off) + tf) VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω, ID = 0.29 A Semiconductor Group S pF – 500 670 – 40 60 – 12 20 td(on) – 7 10 tr – 20 30 td(off) – 60 80 tf – 50 65 2 ns BSS 149 Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Reverse Diode Continuous reverse drain current TA = 25 ˚C IS Pulsed reverse drain current TA = 25 ˚C ISM Diode forward on-voltage IF = 0.7 A, VGS = 0 VSD VGS(th) Grouping Symbol ∆VGS(th) Range of VGS(th) Threshold voltage selected in groups P R S T U V W A 1): – 0.35 – – 1.05 – 0.8 1.2 Limit Values Unit Test Condition – V min. max. – 0.15 V – 0.95 – 1.08 – 1.21 – 1.34 – 1.47 – 1.60 – 1.73 – 0.80 – 0.93 – 1.06 – 1.19 – 1.32 – 1.45 – 1.58 V V V V V V V VGS(th) 1) A specific group cannot be ordered seperately. Each reel only contains transistors from one group. Semiconductor Group – 3 VDS1 = 0.2 V VDS2 = 3 V; ID = 1 mA BSS 149 Characteristics at Tj = 25 ˚C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 ˚C Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS Semiconductor Group 4 BSS 149 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max. Typ. forward transconductance gfs = f (ID) parameter: VDS ≥ 2 × ID × RDS(on)max., tp = 80 µs Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.05 A, VGS = 0 V, (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz Semiconductor Group 5 BSS 149 Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = 3 V, ID = 1 mA, (spread) Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 µs, Tj, (spread) Drain current ID = f (TA) parameter: VGS ≥ 3 V Drain-source breakdown voltage V(BR) DSS = b × V(BR)DSS (25 ˚C) Semiconductor Group 6