INFINEON Q67000-S220

BSP 17
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V
Pin 1
G
Pin 2
D
Pin 3
Pin 4
S
Type
VDS
ID
RDS(on)
Package
Marking
BSP 17
50 V
3.2 A
0.1 Ω
SOT-223
BSP 17
Type
BSP 17
Ordering Code
Q67000-S220
D
Tape and Reel Information
E6327
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TA = 27 °C
Values
Unit
A
3.2
IDpuls
DC drain current, pulsed
TA = 25 °C
12.8
EAS
Avalanche energy, single pulse
mJ
ID = 3.2 A, VDD = 25 V, RGS = 25 Ω
L = 586 µH, Tj = 25 °C
6
Gate source voltage
VGS
Power dissipation
Ptot
TA = 25 °C
Semiconductor Group
± 20
V
W
1.8
1
Sep-12-1996
BSP 17
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip to ambient air
RthJA
≤ 70
Therminal resistance, junction-soldering point 1)
RthJS
≤ 10
DIN humidity category, DIN 40 040
K/W
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
VGS = 0 V, ID = 0.25 mA, Tj = 0 °C
Gate threshold voltage
50
-
-
2.1
3
4
VGS(th)
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
V
IDSS
µA
VDS = 50 V, VGS = 0 V, Tj = 25 °C
-
0.1
1
VDS = 50 V, VGS = 0 V, Tj = 125 °C
-
10
100
Gate-source leakage current
IGSS
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
-
10
100
Ω
RDS(on)
VGS = 10 V, ID = 3.2 A
Semiconductor Group
nA
-
2
0.09
0.1
Sep-12-1996
BSP 17
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
gfs
VDS≥ 2 * ID * RDS(on)max, ID = 3.2 A
Input capacitance
2.5
pF
-
450
600
-
220
350
-
85
150
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
-
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
4.8
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
S
td(on)
ns
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Rise time
-
20
30
-
40
60
-
55
70
-
40
55
tr
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Turn-off delay time
td(off)
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Fall time
tf
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Semiconductor Group
3
Sep-12-1996
BSP 17
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current IS
TA = 25 °C
Inverse diode direct current,pulsed
-
-
12.8
V
1.05
1.2
trr
ns
-
40
-
Qrr
VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs
Semiconductor Group
3.2
-
VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs
Reverse recovery charge
-
VSD
VGS = 0 V, IF = 6.4 A, Tj = 25 °C
Reverse recovery time
-
ISM
TA = 25 °C
Inverse diode forward voltage
A
µC
-
4
0.04
-
Sep-12-1996
BSP 17
Power dissipation
Ptot = ƒ(TA)
Ptot
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 10 V
2.0
3.4
W
A
1.6
ID
2.8
1.4
2.4
1.2
2.0
1.0
1.6
0.8
1.2
0.6
0.8
0.4
0.4
0.2
0.0
0.0
0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
TA
120
°C
160
TA
Safe operating area ID=f(VDS)
Transient thermal impedance
Zth JA = ƒ(tp)
parameter: D = tp / T
parameter : D = 0, TC=25°C
10 2
K/W
10 1
ZthJC
10 0
10 -1
D = 0.50
10 -2
0.20
0.10
10 -3
0.05
single pulse
10 -4
0.02
0.01
10 -5
-8
-7
-6
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
10 s 10
tp
Semiconductor Group
5
Sep-12-1996
BSP 17
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
l
7.5
A
6.5
ID
0.32
Ptot = 2W
j
i
g
kh
fed c
a
Ω
VGS [V]
a
4.0
6.0
b
4.5
c
5.0
d
5.5
4.5
e
6.0
4.0
b f
6.5
g
7.0
h
7.5
3.0
i
8.0
2.5
j
9.0
k
10.0
l
20.0
5.5
5.0
3.5
2.0
a
b
RDS (on)
0.24
0.20
0.16
c
0.12
d
k
l
0.08
e
gi fh
j
1.5
0.04 VGS [V] =
1.0
a
4.0
0.5
0.0
b
4.5
c
5.0
d
5.5
e
f
6.0 6.5
g
7.0
h
i
7.5 8.0
j
9.0
k
l
10.0 20.0
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS
A
4.5
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
8
7.0
S
A
6.0
ID
gfs
6
5.5
5.0
4.5
5
4.0
4
3.5
3.0
3
2.5
2.0
2
1.5
1.0
1
0.5
0.0
0
0
1
2
3
Semiconductor Group
4
5
6
7
8
V
VGS
10
6
0.0
1.0
2.0
3.0
4.0
5.0
6.0
A
ID
7.5
Sep-12-1996
BSP 17
Drain-source on-resistance
RDS (on) = ƒ(Tj )
parameter: ID = 3.2 A, VGS = 10 V
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
0.26
4.6
Ω
V
0.22
4.0
RDS (on)
0.20
VGS(th)
3.6
0.18
3.2
0.16
2.8
0.14
typ
2.4
98%
typ
0.12
98%
2%
2.0
0.10
1.6
0.08
1.2
0.06
0.04
0.8
0.02
0.4
0.00
0.0
-60
-20
20
60
100
°C
160
-60
-20
20
60
100
°C
Tj
160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj , tp = 80 µs
10 1
10 2
nF
A
C
IF
10 0
10 1
Ciss
Coss
10 -1
10 0
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -2
0
5
10
Semiconductor Group
15
20
25
30
V
VDS
40
10 -1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
7
Sep-12-1996
BSP 17
Avalanche energy EAS = ƒ(Tj )
parameter: ID = 3.2 A, VDD = 25 V
RGS = 25 Ω, L = 586 µH
EAS
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
6.5
60
mJ
V
5.5
58
5.0
V(BR)DSS 57
56
4.5
55
4.0
54
3.5
53
3.0
52
2.5
51
50
2.0
49
1.5
48
1.0
47
0.5
46
45
0.0
20
40
60
80
100
120
°C
160
Tj
Semiconductor Group
-60
-20
20
60
100
°C
160
Tj
8
Sep-12-1996
BSP 17
Package outlines
SOT-223
Dimensions in mm
Semiconductor Group
9
Sep-12-1996