BSP 296 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067 D Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage RGS = 20 kΩ Values 100 V 100 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current ID TA = 42 °C A 1 IDpuls DC drain current, pulsed TA = 25 °C 4 Ptot Power dissipation TA = 25 °C Semiconductor Group Unit W 1.8 1 Sep-12-1996 BSP 296 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 70 Therminal resistance, junction-soldering point 1) RthJS ≤ 10 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V 100 - - 0.8 1.4 2 VDS = 100 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 100 V, VGS = 0 V, Tj = 125 °C - 8 50 VDS = 60 V, VGS = 0 V, Tj = 25 °C - - 100 Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 Ω RDS(on) - 0.55 0.8 VGS = 4.5 V, ID = 1 A - 0.95 1.4 2 nA nA VGS = 10 V, ID = 1 A Semiconductor Group µA Sep-12-1996 BSP 296 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 1 A Input capacitance 0.5 pF - 300 400 - 60 90 - 30 45 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 1.3 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Rise time - 8 12 - 15 25 - 120 160 - 65 85 tr VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω Semiconductor Group 3 Sep-12-1996 BSP 296 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - 1 - - 4 VSD VGS = 0 V, IF = 2 A, Tj = 25 °C Semiconductor Group - ISM TA = 25 °C Inverse diode forward voltage A V - 4 0.95 1.3 Sep-12-1996 BSP 296 Power dissipation Ptot = ƒ(TA) Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 2.0 1.1 W A 1.6 ID 0.9 0.8 1.4 0.7 1.2 0.6 1.0 0.5 0.8 0.4 0.6 0.3 0.4 0.2 0.2 0.1 0.0 0.0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 TA 120 °C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T parameter : D = 0, TC=25°C 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 296 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 2.4 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 2.6 Ptot = 2W Ω l j k ihgf A e d 1.8 1.6 1.4 c 1.2 1.0 0.8 0.6 b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 6.0 i 7.0 j 8.0 b k 9.0 l 10.0 RDS (on) 2.0 1.8 1.6 1.4 1.2 1.0 c 0.8 d ihgf j ke 0.6 0.4 0.4 a 0.2 b 2.2 VGS [V] a 2.0 2.0 ID a VGS [V] = 0.2 0.0 a 2.0 2.5 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VDS A 1.5 ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs ID k 10.0 Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 4.5 2.0 A S gfs 3.5 1.6 1.4 3.0 1.2 2.5 1.0 2.0 0.8 1.5 0.6 1.0 0.4 0.5 0.2 0.0 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A ID 4.0 Sep-12-1996 BSP 296 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 1 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 2.0 4.6 Ω V 4.0 RDS (on) 1.6 VGS(th) 1.4 3.6 3.2 1.2 2.8 2.4 98% 1.0 98% 2.0 0.8 typ typ 1.6 0.6 1.2 2% 0.4 0.8 0.2 0.4 0.0 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C Tj 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 3 10 1 pF A Ciss C IF 10 2 10 0 Coss Crss 10 1 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 Sep-12-1996 BSP 296 Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) parameter : D = 0.01, TC=25°C 120 V 116 V(BR)DSS114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 Sep-12-1996 BSP 296 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996