INFINEON Q62702-S565

BSS 131
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V
Pin 1
Pin 2
G
Pin 3
S
Type
VDS
ID
RDS(on)
Package
Marking
BSS 131
240 V
0.1 A
16 Ω
SOT-23
SRs
Type
BSS 131
BSS 131
Ordering Code
Q62702-S565
Q67000-S229
D
Tape and Reel Information
E6327
E6433
Maximum Ratings
Parameter
Symbol
Drain source voltage
VDS
VDGR
Drain-gate voltage
RGS = 20 kΩ
Values
240
V
240
Gate source voltage
VGS
± 14
Gate-source peak voltage,aperiodic
Vgs
± 20
Continuous drain current
ID
TA = 26 °C
A
0.1
IDpuls
DC drain current, pulsed
TA = 25 °C
0.4
Ptot
Power dissipation
TA = 25 °C
Semiconductor Group
Unit
W
0.36
1
Sep-13-1996
BSS 131
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip to ambient air
RthJA
≤ 350
≤ 285
Therminal resistance, chip-substrate- reverse side 1)RthJSR
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
1) For package mounted on aluminium
K/W
55 / 150 / 56
15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V
240
-
-
0.8
1.4
2
VDS = 240 V, VGS = 0 V, Tj = 25 °C
-
0.1
1
VDS = 240 V, VGS = 0 V, Tj = 125 °C
-
2
60
VDS = 130 V, VGS = 0 V, Tj = 25 °C
-
-
30
Gate threshold voltage
VGS(th)
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
Gate-source leakage current
IDSS
IGSS
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
-
1
10
Ω
RDS(on)
-
12
16
VGS = 4.5 V, ID = 0.1 A
-
15
26
2
nA
nA
VGS = 10 V, ID = 0.1 A
Semiconductor Group
µA
Sep-13-1996
BSS 131
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
gfs
VDS≥ 2 * ID * RDS(on)max, ID = 0.1 A
Input capacitance
0.06
pF
-
60
80
-
8
12
-
3.5
5
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
-
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
0.14
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
S
td(on)
ns
VDD = 30 V, VGS = 10 V, ID = 0.26 A
RGS = 50 Ω
Rise time
-
5
8
-
8
12
-
12
16
-
15
20
tr
VDD = 30 V, VGS = 10 V, ID = 0.26 A
RGS = 50 Ω
Turn-off delay time
td(off)
VDD = 30 V, VGS = 10 V, ID = 0.26 A
RGS = 50 Ω
Fall time
tf
VDD = 30 V, VGS = 10 V, ID = 0.26 A
RGS = 50 Ω
Semiconductor Group
3
Sep-13-1996
BSS 131
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current IS
TA = 25 °C
Inverse diode direct current,pulsed
-
0.1
-
-
0.4
VSD
VGS = 0 V, IF = 0.2 A, Tj = 25 °C
Semiconductor Group
-
ISM
TA = 25 °C
Inverse diode forward voltage
A
V
-
4
0.8
1.2
Sep-13-1996
BSS 131
Power dissipation
Ptot = ƒ(TA)
Ptot
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 10 V
0.40
0.11
W
A
0.32
ID
0.09
0.08
0.28
0.07
0.24
0.06
0.20
0.05
0.16
0.04
0.12
0.03
0.08
0.02
0.04
0.01
0.00
0
0.00
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
TA
°C
160
TA
Safe operating area ID=f(VDS)
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
parameter : D = 0.01, TC=25°C
285
V
275
V(BR)DSS270
265
260
255
250
245
240
235
230
225
220
215
-60
-20
20
60
100
°C
160
Tj
Semiconductor Group
5
Sep-13-1996
BSS 131
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.24
Ptot = 0W
A
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
50
l
k
jihgf e
d
VGS [V]
0.20
ID
a
Ω
0.18
0.16
c
0.14
0.12
0.10
0.08
0.06
a
2.0
b
2.5
c
3.0
d
3.5
e
4.0
f
4.5
g
5.0
h
6.0
i
7.0
j
8.0
b k
9.0
l
10.0
b
RDS (on) 40
35
30
25
20
c
15
k i jg
e df
h
10
0.04
a
0.02
5
0.00
0
VGS [V] =
a
2.5
2.0
b
3.0
c
3.5
d
4.0
e
f
4.5 5.0
g
6.0
h
i
7.0 8.0
j
9.0
k
10.0
0
1
2
3
4
5
6
7
8
V
10
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14
VDS
A
0.18
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
0.32
0.24
S
A
0.20
ID
gfs
0.24
0.18
0.16
0.20
0.14
0.16
0.12
0.10
0.12
0.08
0.08
0.06
0.04
0.04
0.02
0.00
0
0.00
1
2
3
4
5
6
7
8
V
10
VGS
Semiconductor Group
6
0.00
0.04
0.08
0.12
0.16
0.20
0.24 A
ID
0.30
Sep-13-1996
BSS 131
Drain-source on-resistance
RDS (on) = ƒ(Tj )
parameter: ID = 0.1 A, VGS = 10 V
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
40
4.6
Ω
V
4.0
RDS (on)
32
VGS(th)
28
3.6
3.2
24
2.8
2.4
98%
20
98%
2.0
16
typ
typ
1.6
12
1.2
2%
8
0.8
4
0.4
0
0.0
-60
-20
20
60
100
°C
160
-60
-20
20
60
100
°C
Tj
160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj , tp = 80 µs
10 3
10 0
pF
A
C
IF
10 2
10 -1
Ciss
10 1
10 -2
Coss
Tj = 25 °C typ
Tj = 150 °C typ
Crss
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 0
0
5
10
Semiconductor Group
15
20
25
30
V
VDS
40
10 -3
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
7
Sep-13-1996
BSS 131
Package outlines
SOT-23
Dimensions in mm
Semiconductor Group
8
Sep-13-1996