BSS 284 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-1.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 284 -50 V -0.13 A 10 Ω SOT-23 SDs Type BSS 284 Ordering Code Q62702-S299 D Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Drain source voltage VDS V Drain-gate voltage -50 Unit V DGR RGS = 20 kΩ -50 Gate source voltage VGS Continuous drain current ID TA = 30 °C ± 20 A -0.13 IDpuls DC drain current, pulsed TA = 25 °C -0.52 Ptot Power dissipation TA = 25 °C Semiconductor Group Values W 0.36 1 18/02/1997 BSS 284 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 350 ≤ 285 Therminal resistance, chip-substrate- reverse side 1)RthJSR DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium K/W 55 / 150 / 56 15 mm x 16.7 mm x 0.7 mm Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage -50 - - -0.8 -1.2 -1.6 VGS(th) VGS=VDS, ID = -1 mA Zero gate voltage drain current V IDSS µA VDS = -50 V, VGS = 0 V, Tj = 25 °C - -0.1 -1 VDS = -50 V, VGS = 0 V, Tj = 125 °C - -2 -60 VDS = -25 V, VGS = 0 V, Tj = 25 °C - - -0.1 Gate-source leakage current IGSS VGS = -20 V, VDS = 0 V Drain-Source on-state resistance - -1 -10 Ω RDS(on) VGS = -10 V, ID = -0.13 A Semiconductor Group nA - 2 5 10 18/02/1997 BSS 284 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = -0.13 A Input capacitance 0.05 pF - 30 40 - 17 25 - 8 12 Crss VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance 0.08 Ciss VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance S td(on) ns VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω Rise time - 7 10 - 12 18 - 10 13 - 20 27 tr VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω Turn-off delay time td(off) VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω Fall time tf VDD = -30 V, VGS = -10 V, ID = -0.27 A RGS = 50 Ω Semiconductor Group 3 18/02/1997 BSS 284 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - -0.13 - - -0.52 VSD VGS = 0 V, IF = -0.26 A, Tj = 25 °C Semiconductor Group - ISM TA = 25 °C Inverse diode forward voltage A V - 4 -0.9 -1.2 18/02/1997 BSS 284 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V 0.40 -0.14 A W -0.12 Ptot 0.32 ID -0.11 -0.10 0.28 -0.09 0.24 -0.08 0.20 -0.07 -0.06 0.16 -0.05 0.12 -0.04 0.08 -0.03 -0.02 0.04 -0.01 0.00 0.00 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 TA °C 160 TA Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25°C -60 V -58 V(BR)DSS-57 -56 -55 -54 -53 -52 -51 -50 -49 -48 -47 -46 -45 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 18/02/1997 BSS 284 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C -0.30 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 32 Ptot = 0W k A l j i h -0.26 ID a Ω VGS [V] a -2.0 -0.24 -0.22 g -0.20 -0.18 -0.16 -3.0 d -3.5 e -4.0 -4.5 -5.0 h -6.0 i -7.0 j -8.0 e -0.06 c f -0.12 -0.08 -2.5 f g -0.14 -0.10 b k -9.0 d l -10.0 RDS (on) b c d e 24 20 16 12 f 8 h j i c 4 VGS [V] = -0.04 a b c d e f -2.5 -2.0 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 b -0.02 0.00 a 0.0 -1.0 -2.0 -3.0 g h i j -7.0 -8.0 -9.0 -10.0 0 -4.0 V -5.5 0.00 -0.04 -0.08 -0.12 -0.16 A VDS -0.24 ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max -0.9 0.16 A ID g S gfs -0.7 0.12 -0.6 0.10 -0.5 0.08 -0.4 0.06 -0.3 0.04 -0.2 0.02 -0.1 0.0 0.00 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 VGS Semiconductor Group 6 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 A ID -0.8 18/02/1997 BSS 284 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -0.13 A, VGS = -10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA 26 -2.6 Ω V 22 RDS (on) -2.2 VGS(th) 20 -2.0 18 -1.8 16 -1.6 14 98% -1.4 98% 12 -1.2 10 -1.0 8 -0.8 typ 6 typ 2% -0.6 4 -0.4 2 -0.2 0 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 Tj °C 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 3 -10 0 pF A C IF 10 2 -10 -1 Ciss Coss 10 1 -10 -2 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 Semiconductor Group -15 -20 -25 -30 V VDS -40 -10 -3 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD 7 18/02/1997