PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS ® FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and CDMA2000 operation from 450 to 470 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. VDD = 28 V, IDQ = 900 mA, f = 470 MHz Drain Efficiency (%) Efficiency -10 30 -20 25 -30 20 ACP FC – 0.75 MHz 15 -40 ACPR FC + 1.98 MHz -50 10 -60 5 -70 Adjacent Channel Power Ratio (dBc) 0 35 PTF041501F Package H-31260-2 Features CDMA IS-95 Performance 40 PTF041501E Package H-30260-2 36 37 38 39 40 41 42 43 44 45 46 47 • Thermally-enhanced packages • Broadband internal matching • Typical CDMA performance at 470 MHz, 28 V - Average output power = 32 W - Linear Gain = 21 dB - Efficiency = 31% • Typical CW performance, 470 MHz, 28 V - Output power at P–1dB = 165 W - Efficiency = 61% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 5:1 VSWR @ 28 V, 150 W (CW) output power Output Power (dBm), Avg. RF Characteristics 3-carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, f = 470 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 21 — dB Drain Efficiency ηD — 42 — % ACPR — –45 — dB Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 04, 2007-08-01 PTF041501E PTF041501F RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 150 W PEP, f = 470 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 20.0 21 — dB Drain Efficiency ηD 45 46 — % Intermodulation Distortion IMD — –30 –29 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.07 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 900 mA VGS 2 2.9 4 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 625 W 3.57 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW) RθJC 0.28 °C/W Ordering Information Type Package Outline Package Description Marking PTF041501E H-30260-2 Thermally-enhanced slotted flange, single-ended PTF041501E PTF041501F H-31260-2 Thermally-enhanced earless flange, single-ended PTF041501F Data Sheet 2 of 11 Rev. 04, 2007-08-01 PTF041501E PTF041501F Typical Performance (data taken in a production test fixture) POUT, Gain & Efficiency (at P-1dB) vs. Frequency IM3 vs. Output Power at Selected Biases VDD = 28 V, IDQ = 900 mA VDD = 28 V, f1 = 469, f2 = 470 MHz 65 Gain (dB) 60 21 Gain 55 20 Output Power 50 19 18 450 455 460 465 -25 -30 IMD (dBc) Efficiency 22 -20 Efficiency (%), POUT (dBm) 23 675 mA -35 900 mA -40 -45 1125 mA -50 -55 -60 45 470 -65 36 38 Frequency (MHz) 42 44 46 Broadband Circuit Performance Power Sweep VDD = 28 V, IDQ = 900 mA, POUT avg.. = 48.75 dBm VDD = 28 V, f = 470 MHz Efficiency 22 20 10 Gain 20 0 Return Loss 10 Power Gain (dB) 30 Return Loss (dB) 40 -10 450 455 460 465 470 IDQ = 1125 mA 21 IDQ = 900 mA 20 IDQ = 675 mA 19 18 17 16 -20 475 39 Frequency (MHz) Data Sheet 50 23 30 0 445 48 Output Power (dBm), avg. 50 Gain (dB), Efficiency (%) 40 41 43 45 47 49 51 53 55 Output Power (dBm) 3 of 11 Rev. 04, 2007-08-01 PTF041501E PTF041501F Typical Performance (cont.) Output Power (at 1 dB Compression) vs. Supply Voltage Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 900 mA, f = 470 MHz IDQ = 900 mA, f = 470 MHz 22 70 Gain 60 50 20 40 19 30 18 20 17 16 0 41 53 52 51 10 Efficiency 39 54 43 45 47 49 51 53 50 55 24 26 28 32 Supply Voltage (V) Output Power (dBm) Intermodulation Distortion vs. POUT Three-carrier CDMA 2000 Performance (in a broadband circuit) VDD = 28 V, IDQ = 900 mA, f1 = 469 MHz, f2 = 470 MHz VDD = 28 V, IDQ = 900 mA, f = 470 MHz 0 50 -35 Efficiency -20 Drain Efficiency (%) -10 IMD (dBc) 30 3rd Order -30 -40 5th -50 -60 7th 40 -40 30 -45 20 -50 ACP Low 10 -55 ALT Up -70 ACP Up -60 0 36 38 40 42 44 46 48 50 36 Output Power (dBm), Avg. Data Sheet Adj. Ch. Power Ratio (dBc) Gain (dB) 21 55 Output Power (dBm) 80 Drain Efficiency (%) 23 38 40 42 44 46 48 50 Output Power (dBm), Avg. 4 of 11 Rev. 04, 2007-08-01 PTF041501E PTF041501F Typical Performance (cont.) Bias Voltage vs. Temperature Normalized Bias Voltage Voltage normalized to typical gate voltage, series show current. 1.03 2.25 A 1.02 4.50 A 6.75 A 1.01 9.00 A 1.00 11.25 A 0.99 13.50 A 0.98 0.97 0.96 -20 0 20 40 60 80 100 Case Temperature (ºC) Z Source Ω Frequency Z Load Ω MHz R jX R jX 450 1.07 –3.15 1.18 0.96 455 1.03 –3.04 1.21 1.03 460 1.02 –2.89 1.24 1.17 465 1.01 –2.80 1.28 1.25 470 0.99 –2.67 1.26 1.36 Data Sheet 5 of 11 470 MHz 450 MHz 0.2 S Z Load 0.1 G 0 .0 Z Load W ARD L OA D T HS T O L E NG Z Source Z0 = 50 Ω Z Source 470 MHz 450 MHz 0.1 E WAV <--- D 0.1 - W AV E LE NGT H S T OW A RD GEN Broadband Circuit Impedance Rev. 04, 2007-08-01 PTF041501E PTF041501F Reference Circuit C1 0.001µF R2 1.3KV R1 1.2KV QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF C3 0.001µF R3 2KV R4 2KV R5 3.3KV C4 10µF 35V R6 10V L1 C5 R7 0.1µF 5.1KV C10 100pF C6 120pF l7 C7 100pF l1 C15 5.6pF DUT l2 l3 l4 C8 2.1pF C13 0.1µF 50V C12 10µF 50V VDD C14 10µF 50V l8 l5 RF_IN C11 1µF l6 l11 C9 4.3pF l9 C17 11pF l12 l13 C16 5.1pF C18 11pF l10 C19 100pF l 14 l15 RF_OUT C20 8.2pF L2 C21 100pF C22 1µF C23 10µF 50V C24 0.1µF 50V C25 10µF 50V 041501ef_sch Reference circuit schematic for f = 460 MHz Circuit Assembly Information DUT PTF041501E or PTF041501F PCB 0.76 mm [.030"] thick, εr = 9.2 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 l14 l15 LDMOS Transistor Rogers TMM10 2 oz. copper Electrical Characteristics at 460 MHz 1 Dimensions: L x W (mm) Dimensions: L x W (in.) λ, 50.0 Ω λ, 24.0 Ω λ, 24.0 Ω λ, 4.8 Ω λ, 50.0 Ω λ, 4.8 Ω λ, 38.0 Ω λ, 10.9 Ω λ, 38.0 Ω λ, 10.9 Ω λ, 5.6 Ω λ, 5.6 Ω λ, 5.6 Ω λ, 21.3 Ω λ, 50.0 Ω 4.32 x 0.71 8.13 x 2.54 6.10 x 2.54 21.59 x 17.78 21.59 x 0.71 8.89 x 17.78 40.64 x 1.27 5.59 x 7.11 40.64 x 1.27 5.59 x 7.11 5.59 x 15.24 23.62 x 15.24 1.27 x 15.24 25.40 x 3.05 3.81 x 0.71 0.016 0.033 0.025 0.097 0.081 0.040 0.158 0.030 0.158 0.030 0.025 0.105 0.006 0.104 0.014 0.170 0.320 0.240 0.850 0.850 0.350 1.600 0.220 1.600 0.220 0.220 0.930 0.050 1.000 0.150 x x x x x x x x x x x x x x x 0.028 0.100 0.100 0.700 0.028 0.700 0.050 0.280 0.050 0.280 0.600 0.600 0.600 0.120 0.028 1 Electrical characteristics are rounded. Data Sheet 6 of 11 Rev. 04, 2007-08-01 PTF041501E PTF041501F Reference Circuit (cont.) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C13, C24 C6 C7, C10, C19, C21 C8 C9 C11, C22 C12, C14, C23, C25 C15 C16 C17, C18 C20 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5 R6 R7 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Ceramic capacitor, 120 pF Ceramic capacitor, 100 pF Digi-Key Digi-Key Digi-Key ATC ATC PCC1772CT-ND PCS6106TR-ND P4525-ND 100B 121 100B 101 Ceramic capacitor, 2.1 pF Ceramic capacitor, 4.3 pF Capacitor, 1.0 µF Capacitor, 10 µF, 50 V ATC ATC ATC Garrett Electronics 100B 2R1 100B 4R3 920C105 TPS106K050R0400 Ceramic capacitor, 5.6 pF Ceramic capacitor, 5.1 pF Ceramic capacitor, 11 pF Ceramic capacitor, 8.2 pF Ferrite, 6 mm Transistor Voltage regulator Chip resistor, 1.2 k-ohms Chip resistor, 1.3 k-ohms Chip resistor, 2 k-ohms Potentiometer, 2 k-ohms Chip resistor, 3.3 k-ohms Chip resistor, 10 ohms Chip resistor, 5.1 k-ohms ATC ATC ATC ATC Ferroxcube Infineon National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 100B 5R6 100B 5R1 100B 110 100B 8R2 53/3/4.6-452 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2.0KECT-ND 3224W-202ETR-ND P3.3KECT-ND P10ECT-ND P5.1KECT-ND Data Sheet 7 of 11 Rev. 04, 2007-08-01 PTF041501E PTF041501F Reference Circuit (cont.) V DD LM V DD RF_OUT 35V + 10 RF_IN V DD 041501ef_assy Reference circuit assembly diagram* (not to scale) *Gerber Files for this circuit available on request Data Sheet 8 of 11 Rev. 04, 2007-08-01 PTF041501E PTF041501F Package Outline Specifications Package H-30260-2 45° X (2.03 [.080]) 2X 12.70 [.500] 4X R 1.52 [.060] D (2X 4.83±0.50 [.190±.020]) S +0.10 LID 13.21 –0.15 +.004 [.520 –.006 ] 2X 3.25 [.128] FLANGE 13.72 [.540] 23.37±0.51 [.920±.020] 2X 1.63 [.064] R G SPH 1.57 [.062] 22.35±0.23 [.880±.009] 4.11±0.38 [.162±.015] 0.0381 [.0015] -A27.94 [1.100] 34.04 [1.340] 1.02 [.040] 260-cases_30260 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 of 11 Rev. 04, 2007-08-01 PTF041501E PTF041501F Package Outline Specifications (cont.) Package H-31260-2 2X 12.70 [.500] 45° X 2.031 [.080] 2x 4.83±0.50 [.190±.020] D 13.72 [.540] LID 13.21 +0.10 –0.15 [.520 +.004 ] –.006 23.37±0.51 [.920±.020] . G 4X R 0.51 [R.020] MAX LID 22.35±0.23 [.880±.009] 4.11±0.38 [.162±.015] 0.0381 [.0015] -A1.02 [.040] SPH 1.57 [.062] FLANGE 23.11 [.910] S 260-cases_31260 Diagram Notes: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 10 of 11 Rev. 04, 2007-08-01 PTF041501E/F Confidential, Limited Internal Distribution Revision History: 2007-08-01 2005-04-15, Data Sheet Previous Version: Data Sheet Page Subjects (major changes since last revision) 6 all Corrected circuit information Updated company information We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2007-08-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2005. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 04, 2007-08-01