PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. VDD = 28 V, IDQ = 1.2 A, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing 30 Efficiency 20 IM3 -40 15 -45 10 ACPR -50 0 36 38 40 42 44 Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion = –36 dBc - Adjacent channel power = –41 dBc • Typical CW performance, 2170 MHz, 30 V - Output power at P–1dB = 180 W - Efficiency = 52% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power 5 -55 34 • 25 Drain Efficiency (%) IM3 (dBc), ACPR (dBc) -25 -35 PTFA211801F Package H-37260-2 Features 2-Carrier WCDMA Drive-up -30 PTFA211801E Package H-36260-2 46 48 Average Output Power (dBm) RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 35 W average ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 14.5 15.5 — dB Drain Efficiency ηD 26 27.5 — % Intermodulation Distortion IMD — –36 –34 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 04, 2007-11-15 PTFA211801E PTFA211801F RF Characteristics (cont.) CW Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, P OUT = 150 W average, f = 2170 MHz Characteristic Gain Compression Symbol Min Typ Max Unit Gcomp — 0.5 1.0 dB Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 140 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 15.5 — dB Drain Efficiency ηD — 38.5 — % Intermodulation Distortion IMD — –28 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.05 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 1.2 A VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 565 W 3.23 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW) RθJC 0.31 °C/W Data Sheet 2 of 11 Rev. 04, 2007-11-15 PTFA211801E PTFA211801F Ordering Information Type and Version Package Type Package Description Marking PTFA211801E V4 H-36260-2 Thermally-enhanced slotted flange, single-ended PTFA211801E PTFA211801F V4 H-37260-2 Thermally-enhanced earless flange, single-ended PTFA211801F Typical Performance (data taken in a production test fixture) Two-carrier WCDMA at Various Biases Broadband Performance VDD = 28 V, f = 2140 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ VDD = 28 V, IDQ = 1.2 A, POUT = 45.0 dBm CW -35 1.3 A 1.4 A -40 1.2 A -45 1.1 A -50 -55 34 36 38 40 42 44 46 Efficiency 25 -10 Return Loss 20 15 Gain 10 -15 -20 -25 5 -30 2070 2090 2110 2130 2150 2170 2190 2210 48 Output Power, Avg. (dBm) Data Sheet -5 Input Return Loss (dB) 30 Gain (dB), Efficiency (%) 3rd Order IMD (dBc) -30 Frequency (MHz) 3 of 11 Rev. 04, 2007-11-15 PTFA211801E PTFA211801F Typical Performance (cont.) Power Sweep, CW Conditions Power Sweep, CW Conditions VDD = 28 V, IDQ = 1.2 A, f = 2170 MHz VDD = 30 V, IDQ = 1.2 A, f = 2170 MHz TCASE = 25°C TCASE = 90°C 18 60 Efficiency 60 Efficiency Gain 15 34 14 21 13 0 20 40 60 80 50 Gain 16 Gain (dB) Gain (dB) 47 Drain Efficiency (%) 17 16 8 100 120 140 160 180 40 15 30 14 20 13 10 12 0 20 40 Output Power (W) 0 80 100 120 140 160 180 Output Power (W) Intermodulation Distortion Products vs. Tone Spacing 2-Tone Drive-up VDD = 28 V, IDQ = 1.2 A, f = 2140 MHz, tone spacing = 1 MHz VDD = 28 V IDQ = 1.2 A, f = 2140 MHz, POUT = 51 dBm PEP -20 -20 -25 Intermodulation Distortion (dBc) Intermodulation Distortion (dBc) 60 3rd Order -30 -35 -40 5th -45 7th -50 -55 45 -25 40 Efficiency -30 35 -35 30 IM3 -40 25 IM5 -45 20 -50 15 -55 10 IM7 -60 5 -65 0 5 10 15 20 25 30 35 40 0 38 42 46 50 54 Output Power, PEP (dBm) Tone Spacing (MHz) Data Sheet Drain Efficiency (%) 17 4 of 11 Rev. 04, 2007-11-15 PTFA211801E PTFA211801F Voltage Sweep VDD = 28 V, IDQ = 1.2 A, f = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, P/A R = 8.5 dB, 3.84 MHz BW IDQ = 1.2 A, f = 2140 MHz, POUT = 51 dBm PEP, tone spacing = 1 MHz 35 Efficiency 30 Gain -35 25 ACPR Low 20 -40 15 10 -45 5 ACPR Up -50 0 34 36 38 40 42 44 46 48 Average Output Power (dBm) -10 45 -15 40 Efficiency -20 IM3 Up 35 -25 30 -30 25 -35 20 -40 15 Gain -45 Gain (dB), Drain Efficiency (%) -30 3rd Order Intermodulation Distortion (dBc) Single-carrier WCDMA Drive-up Drain Efficiency (%), Gain (dB) Adjacent Channel Power Ratio (dB) Typical Performance (cont.) 10 23 24 25 26 27 28 29 30 31 32 33 Supply Voltage (V) Bias Voltage vs. Temperature Normalized Bias Voltage (V) Voltage normalized to typical gate voltage, series show current 1.03 0.3 A 1.02 0.9 A 1.5 A 1.01 2.3 A 1.00 4.5 A 0.99 6.8 A 9.0 A 0.98 11.3 A 0.97 13.5 A 0.96 0.95 -20 0 20 40 60 80 100 Case Temperature (°C) Data Sheet 5 of 11 Rev. 04, 2007-11-15 PTFA211801E PTFA211801F Broadband Circuit Impedance Z Source NE R A TO R 0. D Z0 = 50 Ω Z Load 0 .1 Z Load G 2210 MHz S R jX R jX 2070 7.2 –0.5 1.5 2.3 2110 7.8 –0.2 1.4 2.6 2140 8.4 –0.0 1.4 2.8 2170 9.1 0.0 1.4 3.0 2210 10.0 –0.2 1.3 3.4 0.3 0.2 0.1 0.0 2070 MHz 2210 MHz 0.1 E MHz Z Source WAV Z Load Ω W ARD LOA D T HS T O L E NG Z Source Ω Frequency 2070 MHz See next page for reference circuit information Data Sheet 6 of 11 Rev. 04, 2007-11-15 PTFA211801E PTFA211801F Reference Circuit C1 0.001µF R2 1.3KV R1 1.2K V QQ1 LM7805 V DD Q1 BCP56 C2 0.001µF C3 0.001µF R3 2K V R4 2K V R5 10V C4 10µF 35V R6 5.1K V C5 0.1µF R8 5.1K V R7 5.1KV C6 0.1µF C7 .01µF C8 9.1pF C12 9.1pF l7 R9 10 V C10 8.2pF RF_IN l1 l2 C13 0.02µF C14 1µF l8 C21 8.2pF DUT l3 C9 0.5pF l4 l5 l6 l10 C11 1.5pF V DD C15 22µF 50V l11 l12 l13 l14 RF_OUT C20 0.3pF l9 C16 9.1pF C17 0.02µF C18 1µF A211801ef_sch C19 22µF 50V Reference circuit schematic for ƒ = 2140 MHz Circuit Assembly Information DUT PTFA211801E or PTFA211801F PCB 0.76 mm [.030"] thick, εr = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8, l9 l10 l11 (taper) l12 l13 l14 LDMOS Transistor Rogers TMM4 Electrical Characteristics at 2140 MHz1 Dimensions: L x W (mm) 0.097 0.267 0.136 0.087 0.018 0.077 0.207 0.256 0.087 0.073 0.019 0.087 0.403 λ, 50.0 Ω λ, 50.0 Ω λ, 42.0 Ω λ, 42.0 Ω λ, 11.4 Ω λ, 6.9 Ω λ, 48.0 Ω λ, 45.0 Ω λ, 5.0 Ω λ, 5.0 Ω / 40.0 Ω λ, 40.0 Ω λ, 50.0 Ω λ, 50.0 Ω 7.37 x 1.40 19.86 x 1.40 10.24 x 1.85 6.50 x 1.85 1.24 x 10.24 5.23 x 17.78 15.70 x 1.50 19.30 x 1.65 5.84 x 25.40 5.59 x 25.40 / 1.98 1.45 x 1.98 6.65 x 1.40 30.73 x 1.40 2 oz. copper Dimensions: L x W (in.) 0.290 0.782 0.403 0.256 0.049 0.206 0.618 0.760 0.230 0.220 0.057 0.262 1.210 x 0.055 x 0.055 x 0.073 x 0.073 x 0.403 x 0.700 x 0.059 x 0.065 x 1.000 x 1.000 / 0.078 x 0.078 x 0.055 x 0.055 1Electrical characteristics are rounded. Data Sheet 7 of 11 Rev. 04, 2007-11-15 PTFA211801E PTFA211801F Reference Circuit (cont.) + 10 35V LM RF_IN RF_OUT A211801ef _assy Reference circuit assembly diagram* (not to scale) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C6 C7 C8, C12, C16 C9 C10, C21 C11 C13, C17 C14, C18 C15, C19 C20 Q1 QQ1 R1 R2 R3 R4 R5, R9 R6, R7, R8 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Capacitor, 0.01 µF Ceramic capacitor, 9.1 pF Ceramic capacitor, 0.5 pF Ceramic capacitor, 8.2 pF Ceramic capacitor, 1.5 pF Ceramic capacitor, 0.02 µF Ceramic capacitor, 1 µF Electrolytic capacitor, 22 µF, 50 V Ceramic capacitor, 0.3 pF Transistor Voltage regulator Chip resistor, 1.2 k-ohms Chip resistor, 1.3 k-ohms Chip resistor, 2 k-ohms Potentiometer, 2 k-ohms Chip resistor, 10 ohms Chip resistor, 5.1 k-ohms Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC ATC ATC Digi-Key ATC Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND PCS6106TR-ND PCC104BCT 200B103 100B 9R1 100B 0R5 100B 8R2 100B 1R5 200B 203 920C105 PCE3374CT-ND 100B 0R3 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P5.1KECT-ND *Gerber Files for this circuit available on request Data Sheet 8 of 11 Rev. 04, 2007-11-15 PTFA211801E PTFA211801F Package Outline Specifications Package H-36260-2 45° X 2.03 [.080] 2X 12.70 [.500] 4X R 1.52 [.060] C L D (2X 4.83±0.50 [.190±.020]) S LID 13.21 +0.10 –0.15 [.520 +.004 ] –.006 2X 3.25 [.128] C L FLANGE 13.72 [.540] 23.37±0.51 [.920±.020] 2X 1.63 [.064] R G 27.94 [1.100] SPH 1.57 [.062] 22.35±0.23 [.880±.009] C L 4.11±0.38 [.162±.015] 0.0381 [.0015] -A2 6 0 -c a s e s _ 3 0 2 6 0 /1 1 -1 5 -0 7 34.04 [1.340] 1.02 [.040] Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 9 of 11 Rev. 04, 2007-11-15 PTFA211801E PTFA211801F Package Outline Specifications (cont.) Package H-37260-2 2X 12.70 [.500] 45° X 2.031 [.080] CL 2x 4.83±0.50 [.190±.020] D 13.72 [.540] C L LID 13.21 +0.10 –0.15 +.004 [.520 –.006] 23.37±0.51 [.920±.020] G 4X R 0.89 [R.035] MAX LID 22.35±0.23 [.880±.009] 4.11±0.38 [.162±.015] 0 . 0 3 8 1 [.0 0 1 5 ] -A260-cases_31260_11-15-07 1.02 [.040] SPH 1.57 [.062] FLANGE 23.11 [.910] S Diagram Notes—unless otherwise specified: 1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 2. All tolerances ± 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Data Sheet 10 of 11 Rev. 04, 2007-11-15 PTFA211801E/F Confidential, Limited Internal Distribution Revision History: 2007-11-15 2005-06-10, Data Sheet Previous Version: Data Sheet Page Subjects (major changes since last revision) 1, 3, 9, 10 Update product to V 4.1, with new package technologies. Update package outline diagrams. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2007-11-15 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2005. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 04, 2007-11-15