INFINEON PTF080101S-

PTF080101S
Thermally-Enhanced High Power RF LDMOS FET
10 W, 860 – 960 MHz
Description
The PTF080101S is a 10-watt, internally-matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.
Thermally-enhanced packaging provides the coolest operation possible.
Full gold metallization ensures excellent device lifetime and reliability.
PTF080101S
Package 32259
Features
Typical EDGE Performance
VDD = 28 V, IDQ = 150 mA, f = 959.8 MHz
TCASE = 25°C
TCASE = 85°C
4
40
Efficiency
3
30
2
20
1
10
EVM
0
0
28
30
Thermally-enhanced packaging
•
Broadband internal matching
•
Typical EDGE performance
- Average output power = 5 W
- Gain = 18.5 dB
- Efficiency = 38%
•
Typical CW performance
- Output power at P–1dB = 13 W
- Gain = 17.5 dB
- Efficiency = 55%
•
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
•
Excellent thermal stability
•
Low HCI drift
•
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
50
Drain Efficiency (%)
RMS EVM (Average %).
5
•
32
34
36
38
Output Power (dBm)
ESD: Electrostatic discharge sensitive device—observe handling precautions!
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 150 mA, P OUT = 5.0 W, f = 959.8 MHz
Characteristic
Symbol
Min
Typ
Max
Units
EVM (RMS)
—
2.0
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–61
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
—
–71
—
dBc
Gain
Gps
—
18.5
—
dB
Drain Efficiency
ηD
—
38
—
%
Error Vector Magnitude
Data Sheet
1 of 9
2004-10-05
PTF080101S
RF Characteristics (cont.)
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 150 mA, POUT = 10 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Units
Gain
Gps
18.0
18.5
—
dB
Drain Efficiency
ηD
36.0
38
—
%
Intermodulation Distortion
IMD
—
–32
–30
dBc
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
On-State Resistance
VGS = 10 V, IDS = 0.1 A
RDS(on)
—
0.83
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 150 mA
VGS
2.5
3.2
4.0
V
Gate Leakage Current
VGS = 10 V, V DS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
58
W
0.333
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C)
RθJC
3.0
°C/W
Ordering Information
Type
Package Outline
Package Description
Marking
PTF080101S
32259
Thermally-enhanced SMD, single-ended
PTF080101S
Data Sheet
2 of 9
2004-10-05
PTF080101S
Typical Performance (measurements taken in production test fixture)
EDGE Modulation Spectrum Performance
EVM & Modulation Spectrum Performance
VDD = 28 V, IDQ = 150 mA, f = 959.8 MHz
2.0
50
400 kHz
30
-65
20
-70
600 kHz
10
-75
Drain Efficiency (%)
40
-60
EVM RMS (Average %) .
Efficiency
28
30
32
34
36
38
400 KHz
1.8
-60
1.6
-65
EVM
-70
1.4
1.2
1.0
0.08
0
-80
-55
600 KHz
0.10
Output Power (dBm)
0.12
0.14
0.16
0.18
0.20
-75
Modulation Spectrum (dBc)
TCASE = 25°C
TCASE = 85°C
-55
Modulation Spectrum (dBc)
VDD = 28 V, POUT = 4 W, f = 959.8 MHz
-80
0.22
Quiscent Drain Current (A)
Gain & Efficiency vs. Output Power
Broadband Performance
VDD = 28 V, IDQ = 150 mA, f = 960 MHz
VDD = 28 V, IDQ = 150 mA, POUT = 10 W
30
70
21
60
19
50
Gain
18
40
17
30
16
20
Efficiency
15
10
0
14
20
25
30
35
40
20
10
40
0
30
-10
-20
840
45
Output Power (dBm)
50
Gain
Return Loss
860
880
20
900
920
940
Drain Efficiency (%)
60
Gain (dB), Return Loss (dB)
20
Drain Efficiency (%)
Gain (dB)
Efficiency
10
960
Frequency (MHz)
All published data at TCASE = 25°C unless otherwise indicated
Data Sheet
3 of 9
2004-10-05
PTF080101S
Typical Performance (cont.)
Gain vs. Output Power
Output Power vs. Supply Voltage
VDD = 28 V, f = 960 MHz
IDQ = 150 mA, f = 960 MHz
42
20.5
Output Power (dBm)
19.5
IDQ = 150 mA
18.5
IDQ = 50 mA
41
40
39
38
37
17.5
27
30
33
36
39
20
42
25
Output Power (dBm)
35
Supply Voltage (V)
Intermodulation Distortion vs. Output Power
3-Carrier CDMA 2000 Performance
VDD = 28 V, IDQ = 150 mA, f1 = 959 MHz, f2 = 960 MHz
VDD = 28 V, IDQ = 150 mA, f = 960 MHz
-20
3rd Order
Drain Efficiency (%)
-30
IMD (dBc)
30
5th
-40
-50
7th
-60
-70
50
-30
45
-35
40
-40
35
Adj 1.98 MHz
30
-45
-50
Alt 1, 3.21 MHz
25
-55
20
-60
15
-65
10
-70
Alt 2, 5.23 MHz
5
-75
Efficiency
0
-80
25
30
35
40
24
26
28
30
32
34
36
38
40
Output Power (dBm)
Output Power, PEP (dBm)
Data Sheet
-80
22
45
Adj. Ch. Power Ratio (dBc)
Power Gain (dB)
IDQ = 300 mA
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PTF080101S
Typical Performance (cont.)
IS-95 CDMA Performance
Gate-Source Voltage vs. Temperature
VDD = 28 V, IDQ = 150 mA, f = 960 MHz
Voltage normalized to typical gate voltage,
series show current
-45
Adj 750 kHz
30
-50
25
-55
20
-60
Efficiency
15
-65
10
-70
5
-75
Alt 1 1.98MHz
0
Normalized Bias Voltage
35
Drain Efficiency (%)
1.04
-40
Adj. Ch. Power Ratio (dBc)
40
22 24
26 28 30
32 34
1.02
1.01
0.97 A
1.20 A
1.00
0.99
0.98
0.97
0.96
-80
18 20
0.05 A
0.28 A
0.51 A
0.74 A
1.03
-20
36 38
0
Output Power (dBm), Avg.
20
40
60
80
100
Case Temperature (°C)
Broadband Circuit Impedance
Z0 = 50 Ω
D
NER
ATO
R -->
Z Load
G
0. 2
Z Source
960 MHz
860 MHz
S
Z Load
0 .1
Z Load Ω
jX
R
jX
860
1.4
–0.8
10.0
8.0
880
1.3
–0.2
10.0
8.4
900
1.4
0.2
10.0
8.7
920
1.5
0.5
10.0
9.0
940
1.5
1.0
10.1
9.3
960
1.6
1.1
10.3
9.4
Data Sheet
5 of 9
Z Source
960 MHz
0.2
R
0.1
MHz
0.0
Z Source Ω
W ARD L OA D T HS T O
Frequency
860 MHz
0.1
2004-10-05
PTF080101S
Reference Circuit
C11
0.001µF
R5
1.3KV
R4
1.2KV
QQ1
LM7805
VDD
Q1
BCP56
C12
0.001µF
C13
0.001µF
R7
24KV
R6
2K V
R8
5.1KV
+
C14
10 µF
R9
10 V
C1
36 pF
C15
0.1 µF
R10
5.1KV l17
l10
C5
36pF
R11
10 V
C9
36 pF
DUT
l1
l3
l4
C2
2.4 pF
l2
l5
C3
36 pF
V DD
l9
l16
RF_IN
l11
+ C7
C6
36 pF
100 µF
l6
l7
l8
l12
C4
7.5pF
l13
C8
2.7 pF
l14
l15
RF_OUT
C10
3.0 pF
080101sf_sch
Reference Circuit Schematic for 960 MHz
Circuit Assembly Information
DUT
PCB
PTF080101S
0.76 mm [.030”] thick,
Microstrip
Electrical Characteristics at 960 MHz*
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
l11
l12
l13
l14
l15
l16
l17
εr = 4.5
LDMOS Transistor
2 oz. copper
Rogers TMM4
Dimensions: L x W (mm)
Dimensions: L x W (in.)
0.023 λ, 50.0 Ω
0.172 λ, 16.0 Ω
0.044 λ, 50.0 Ω
0.084 λ, 50.0 Ω
0.149 λ, 9.3 Ω
0.010 λ, 9.3 Ω
0.023 λ, 27.0 Ω
0.065 λ, 11.9 Ω
0.031 λ, 70.0 Ω
0.108 λ, 70.0 Ω
0.108 λ, 70.0 Ω
0.094 λ, 11.9 Ω
0.041 λ, 11.9 Ω
0.078 λ, 50.0 Ω
0.011 λ, 50.0 Ω
0.076 λ, 70.0 Ω
0.165 λ, 70.0 Ω
3.68 x 1.27
25.40 x 0.64
6.99 x 1.27
13.46 x 1.27
21.46 x 11.94
1.52 x 11.94
3.56 x 3.25
9.53 x 9.02
5.08 x 0.64
17.78 x 0.64
17.78 x 0.64
13.72 x 9.02
5.97 x 9.02
12.45 x 1.27
1.78 x 1.27
11.18 x 0.64
24.38 x 0.64
0.145
1.000
0.275
0.530
0.845
0.060
0.140
0.375
0.200
0.700
0.700
0.540
0.235
0.490
0.070
0.440
0.960
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
0.050
0.025
0.050
0.050
0.470
0.470
0.128
0.355
0.025
0.025
0.025
0.355
0.355
0.050
0.050
0.025
0.025
*Electrical characteristics are rounded.
Data Sheet
6 of 9
2004-10-05
PTF080101S
Reference Circuit (cont.)
R8
C14
V DD
C12
R8
C14
+
C15
+
VDD
QQ1
C11
C15
R6
R7
C1
LM
C13
C6
RF_IN
R11
R6
R7
C1
V DD
C11
Q1
R9 R10 R5
R4
C5
C9
C3
C2
C4
QQ1
C13
LM
C7
+
Q1
R9 R10 R 5
R4
C12
R11
080101s_assy-dtl
RF_OUT
C10
C8
080101s_assy
Reference Circuit1 (not to scale)
Component
Description
Manufacturer
P/N or Comment
C2
C1, C3, C5, C6, C9
C4
C7
C8
C10
C11, C12, C13
C14
C15
Q1
QQ1
R1, R2, R3
R4
R5
R6
R7
R8, R10
R9, R11
Capacitor, 2.4 pF
Capacitor, 36 pF
Capacitor, 7.5 pF
Capacitor, 100 µF,50 V
Capacitor, 2.7 pF
Capacitor, 3.0 pF
Capacitor, 0.001 µF
Capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
Transistor
Voltage Regulator
Resistor, 220 ohm, 1/4W
Resistor 1.2 k-ohms
Resistor 1.3 k-ohms
Potentiometer 2 k-ohms
Resistor 24 k-ohms
Resistor 5.1 k-ohms
Resistor, 10 ohms
ATC
ATC
ATC
Digi-Key
ATC
ATC
Digi-Key
Digi-Key
Digi-Key
National Semiconductor
Infineon
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
100B 2R4
100B 360
100B 7R5
P5182-ND
100B 2R7
100B 3R0
PCC1772CT-ND
PCS6106TR-ND
P4525-ND
BCP56
LM7805
220QBK
P1.2KGCT-ND
P1.3KGCT-ND
3224W-202ETR-ND
P24KECT-ND
P5.1KECT-ND
P10ECT-ND
1Gerber files for this circuit are available on request.
Data Sheet
7 of 9
2004-10-05
PTF080101S
Package Outline Specifications
Package 32259
1.78
[.070]
60° X 6.60
[60° X .260]
2X 3.30
[.130]
2X 0.20±0.03
[.008±.001]
C
L
4X R0.25
[R.010]
MAX.
D
2X 1.27
[.050]
1.02 [0.040]
0.51 [0.020]
2X 3.30
[.130]
6.86
[.270]
C
L
4X 0.51
[.020]
G
4X 0.25 MAX
[.010]
10.16±0.25
[.400±.010]
2X 1.65±0.51
[.065±.020]
LEAD COPLANARITY
BOTTOM OF LEAD
TO BOTTOM OF PACKAGE
.000±.002 (TYP)
6.86
[.270]
6.48
[.255] SQ
0.74±0.05
[.028±.002]
2.99 ±0.38
[1.14 ±.010]
S
0°-7°
DRAFT ANGLE
6.35
[.250] SQ
H-32259-2-1-2307
Diagram Notes:
1. Lead thickness: 0.21 ±0.03 [.008 ± .001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products.
Data Sheet
8 of 9
2004-10-05
PTF080101S
Confidential, Limited Internal
Revision History:
2004-10-05
Previous Version:
2004-08-23, Preliminary Data Sheet
Page
Data Sheet
Subjects (major changes since last revision)
Add specification data and information, remove Preliminary Status
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
[email protected]
To request other information, contact us at:
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or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2004-10-05
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2004.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
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2004-10-05