PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. -25 60 -30 50 Efficiency 40 -40 30 20 ACP Low -50 10 ACP Up -55 31 33 35 37 39 41 43 Drain Efficiency (%) ACP (dBc) VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz -45 0 45 47 PTFB211501F Package H-37248-2 Features Single-carrier WCDMA Drive Up -35 PTFB211501E Package H-36248-2 • Broadband internal matching • Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% CCDF - Average output power = 40 W - Linear Gain = 18 dB - Efficiency = 32% - Adjacent channel power = –34 dBc • Typical CW performance, 2170 MHz, 30 V - Output power at P–1dB = 150 W - Efficiency = 55% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power • Pb-Free and RoHS compliant 49 Output Power (dBm) RF Characteristics Single-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 40 W AVG, ƒ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.5 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 — dB Drain Efficiency ηD 27 32 — % IMD — –34 –32 dBc Intermodulation Distortion All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F RF Characteristics (cont.) Two-tone Measurement (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 140 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 18 — dB Drain Efficiency ηD — 40 — % IMD — –30 — dBc Intermodulation Distortion DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.08 — Ω Operating Gate Voltage VDS = 30 V, IDQ = 1.2 A VGS 1.6 2.1 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW) RθJC 0.29 °C/W Ordering Information Type and Version Package Outline Package Description Shipping PTFB211501E V4 H-36248-2 Slotted flange, single-ended Tray PTFB211501E V4 R250 H-36248-2 Slotted flange, single-ended Tape & Reel 250 pcs PTFB211501F V4 H-37248-2 Earless flange, single-ended Tray PTFB211501F V4 R250 H-37248-2 Earless flange, single-ended Tape & Reel 250 pcs *See Infineon distributor for future availability. Data Sheet 2 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Typical Performance (data taken in production test fixture) Single-carrier WCDMA, 3GPP Broadband Two-tone Broadband VDD = 30 V, IDQ = 1.20 A, POUT = 40 W VDD = 30 V, IDQ = 1.20 A, POUT = 63 W -15 50 40 -20 35 -25 Efficiency -30 -35 25 ACP 20 15 2080 2100 Gain 2120 2140 2160 -40 2180 -45 2200 IRL 45 40 35 -35 -40 25 Gain 20 Frequency (MHz) Two-tone Drive-up ƒ 1 = 2170 MHz, ƒ2 = 2169 MHz ƒ 1 = 2170 MHz, ƒ2 = 2169 MHz Gain -10 40 -20 30 17 20 16 Efficiency 15 50 52 IMD (dBc) Gain (dB) 18 50 Efficiency (%) 19 48 45 Efficiency 35 IMD3 -40 -50 0 -60 54 55 -30 10 25 15 5 40 Output Power, PEP (dBm) Data Sheet -45 -50 15 2070 2090 2110 2130 2150 2170 2190 2210 VDD = 30 V, IDQ = 1.20 A, 46 -30 30 Two-tone Drive-up 44 -25 IMD3 VDD = 30 V, IDQ = 1.20 A, 42 -20 Efficiency Frequency (MHz) 40 -15 Efficiency (%) 30 -10 Return Loss (dB), IMD (dBc) IRL 55 Gain / Efficiency (dB / %) 45 -10 IRL (dB) / ACP Up (dBc) Gain / Efficiency (dB / %) 50 42 44 46 48 50 52 54 Output Power, PEP (dBm) 3 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Typical Performance (cont.) Two-tone Drive-up at Selected Frequencies Power Sweep, CW Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.20 A, tone spacing = 1 MHz VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz -20 20 65 19 55 2140 MHz -30 Gain (dB) IMD (dBc) 2110 MHz -40 -50 18 35 17 Efficiency 16 25 15 15 -60 41 43 45 47 49 51 41 53 43 49 CW Performance Gain vs. Output Power VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz VDD = 30 V, ƒ = 2170 MHz 50 17 40 Gain 16 30 +25°C +85°C –10°C Efficiency 20 14 10 43 44 45 46 47 48 49 50 51 53 51 53 IDQ = 1.40 A Power Gain (dB) 18 15 51 19 Drain Efficiency (%) 60 18 IDQ = 1.20 A 17 IDQ = 0.80 A 16 52 41 Output Power (dBm) Data Sheet 47 CW Performance Gain & Efficiency vs. Output Power 19 42 45 Output Power (dBm) Output Power, PEP (dBm) Gain (dB) 45 Gain Drain Efficiency (%) 2170 MHz 43 45 47 49 Output Power (dBm) 4 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Typical Performance (cont.) Bias Voltage vs. Temperature Intermodulation Distortion vs. Output Power Voltage normalized to typical gate voltage, series show current VDD = 30 V, IDQ = 1.20 A, ƒ 1 = 2170 MHz, ƒ2 = 2169 MHz -20 1.03 IMD (dBc) -30 Normalized Bias Voltage (V) 3rd Order 5th -40 7th -50 45 50 55 2A 4A 1.01 8A 1 10 A 12 A 0.99 14 A 16 A 0.98 0.97 -20 -60 40 1.02 0 20 40 60 80 100 Case Temperature (°C) Output Power, PEP (dBm) G Z Load NGT H S R jX R jX 2200 4.29 –8.14 1.49 –4.39 2170 4.36 –8.34 1.52 –4.50 2140 4.45 –8.53 1.55 –4.61 2110 4.55 –8.74 1.58 –4.72 2080 4.67 –8.95 1.62 –4.84 <--- Z Load Ω 5 of 13 2080 MHz 2200 MHz MHz Data Sheet 0.1 ELE WAV Z Source Ω Frequency 0.2 Z Load 0.1 Z Source 0.0 D Z0 = 50 Ω D LOA D S T OW AR - W AV E LE NGT H ST Broadband Circuit Impedance Z Source 0. 2 0. 3 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Reference Circuit 8 C105 10000000 pF TL108 In NC 4 2 3 R802 1200 Ohm 3 1 6 2 1 TL107 TL111 C803 1000 pF 3 C801 1000 pF C S1 E 3 S3 R 804 1000 Ohm C102 10 pF TL101 TL109 TL110 2 5 4 R801 1300 Ohm C106 10000 pF 7 S B R 102 2000 Ohm 1 Out NC C802 1000 pF 2 TL 112 R803 1000 Ohm S2 VGS1 1 3 1 2 3 1 R101 5100 Ohm 1 2 3 3 C104 1000000 pF 2 TL105 C103 10000 pF TL102 TL 104 TL 128 TL 127 TL134 TL118 TL114 TL 113 TL106 3 2 C101 10 pF TL 126 TL133 R103 10 Ohm TL 115 TL 116 TL103 TL 124 1 TL120 TL132 TL131 TL125 TL122 TL130 TL 117 TL 129 TL121 3 RF IN 1 2 1 3 2 b2 1 1 5 0 1 ef -v 4 _b d i n _ 1 1- 18 - 2 0 0 9 2 GATE DUT 1 3 TL 119 TL123 C107 0.4 pF C108 0.4 pF Reference circuit input schematic for ƒ = 2170 MHz TL222 TL225 TL234 1 TL219 TL237 TL242 TL235 TL241 TL230 2 1 3 TL231 2 1 3 TL228 2 1 TL238 2 3 3 VDD1 C205 20000 pF TL218 DRAIN DUT TL216 C210 10000000 pF C207 10 pF TL209 TL207 C204 1000000 pF TL210 2 1 TL203 TL202 TL204 TL201 TL212 TL205 C202 10 pF TL213 TL206 TL214 TL215 RF OUT 3 1 2 3 4 TL211 TL208 C201 1.2 pF C208 10 pF C206 20000 pF TL217 TL224 TL223 TL233 TL221 TL236 TL220 3 2 1 TL226 TL240 C203 1000000 pF TL232 C209 10000000 pF TL229 3 2 TL227 3 1 2 1 b 2 1 1 5 0 1 e f - v 4 _bdout _ 1 1- 18 - 2 0 0 9 2 TL239 3 1 VDD2 Reference circuit output schematic for ƒ = 2170 MHz Data Sheet 6 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Reference Circuit (cont.) VDD C802 VDD R801 C803 S3 S2 R802 R801 R101 C104 C103 C107 C207 S1 + R803 R804 C801 + R102 + 10 µF C105 C106 C205 C204 10 µF C210 C102 R103 C101 C201 C108 C202 C209 + C208 10 µF C203 C206 VDD PTFB211501EF TMM4, .030 PTFB211501EF (62) TMM4, .030 (62) b 2 1 1 5 0 1 e f - v 1 _ C D_ 11 - 18 - 2 0 0 9 Reference circuit assembly diagram (not to scale)* * Gerber Files for this circuit available on request Data Sheet 7 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Reference Circuit (cont.) Circuit Assembly Information DUT PTFB211501E or PTFB211501F PCB LTN/PTFB211501EF Component LDMOS Transistor 0.76 mm [.030"] thick, εr = 4.5 TMM4 2 oz. copper Description Suggested Manufacturer P/N C101, C102 Chip capacitor, 10 pF ATC 100B100JW500X C103, C106 Chip capacitor, 0.01 µF ATC 200B103MW50X C104 Chip capacitor, 1 µF Digi-Key 445-1411-2-ND C105 Capacitor, 10 µF Digi-Key 399-1655-2-ND C107, C108 Chip capacitor, 0.4 pF ATC 100B0R4CW500X C801, C802, C803 Chip capacitor, 1000 pF Digi-Key PCC1772CT-ND R101 Resistor, 5100 Ω Digi-Key P5.1KECT-ND R102 Resistor, 2000 Ω Digi-Key P2.0KECT-ND R103 Resistor, 10 Ω Digi-Key P10ECT-ND R801 Resistor, 1300 Ω Digi-Key P1.3KECT-ND R802 Resistor, 1200 Ω Digi-Key P1.2KECT-ND R803, R804 Resistor, 1000 Ω Digi-Key P1.0KECT-ND S1 Transistor Infineon Technologies BCP56 S2 Voltage regulator National Semiconductor LM7805 S3 Potentiometer, 2k Ω Digi-Key 3224W-202ECT-ND C201 Chip capacitor, 1.2 pF ATC 100B1R2CW500X C202 Chip capacitor, 10 pF ATC 100B100JW500X C203, C204 Chip capacitor, 1 µF Digi-Key 445-1411-2-ND C205, C206 Chip capacitor, 0.02 µF ATC 200B203MW50X C207, C208 Chip capacitor, 10 pF ATC 100B100JW500X C209, C210 Capacitor, 10 µF Garrett Electronics TPSE106K050R0400 Input Output Data Sheet 8 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Input TL101 0.041 λ, 40.30 Ω W1 = 2.032, W2 = 2.032, W3 = 3.048 W1 = 80, W2 = 80, W3 = 120 TL102 0.033 λ, 65.15 Ω W = 0.889, L = 2.540 W = 35, L = 100 TL103 0.027 λ, 65.15 Ω W1 = 0.889, W2 = 0.889, W3 = 2.032 W1 = 35, W2 = 35, W3 = 80 TL104 0.047 λ, 65.15 Ω W = 0.889, L = 3.556 W = 35, L = 140 TL105 0.000 λ, 40.30 Ω W = 2.032, L = 0.025 W = 80, L = 1 W = 0.889 W = 35 TL106, TL128 TL107 0.040 λ, 53.88 Ω W1 = 1.270, W2 = 1.270, W3 = 3.048 W1 = 50, W2 = 50, W3 = 120 TL108 0.089 λ, 20.46 Ω W1 = 5.080, W2 = 5.080, W3 = 6.350 W1 = 200, W2 = 200, W3 = 50 TL109, TL112 0.021 λ, 30.35 Ω W = 3.048, L = 1.524 W = 120, L = 60 TL110, TL111 0.035 λ, 30.35 Ω W1 = 3.048, W2 = 3.048, W3 = 2.540 W1 = 120, W2 = 120, W3 = 100 TL113 0.025 λ, 65.15 Ω W = 0.889, L = 1.905 W = 35, L = 75 TL114, TL115 0.012 λ, 46.07 Ω W = 1.651, L = 0.889 W = 65, L = 35 TL116 0.236 λ, 65.15 Ω W = 0.889, L = 18.034 W = 35, L = 710 W1 = 10.160, W2 = 17.780 W1 = 400, W2 = 700 TL117 TL118 0.186 λ, 50.98 Ω W = 1.397, L = 13.970 W = 55, L = 550 TL119, TL123 0.000 λ, 40.30 Ω W = 2.032, L = 0.025 W = 80, L = 1 TL120 0.014 λ, 40.30 Ω W = 2.032, L = 1.016 W = 80, L = 40 TL121 0.062 λ, 6.87 Ω W = 17.780, L = 4.191 W = 700, L = 165 TL122 0.020 λ, 11.38 Ω W = 10.160, L = 1.397 W = 400, L = 55 TL124, TL126 0.017 λ, 34.60 Ω W = 2.540, L = 1.270 W = 100, L = 50 TL125 0.155 λ, 40.30 Ω W = 2.032, L = 11.430 W = 80, L = 450 TL127 0.127 λ, 50.98 Ω W = 1.397, L = 9.525 W = 55, L = 375 TL129 0.013 λ, 6.87 Ω W1 = 17.780, W2 = 17.780, W3 = 0.889 W1 = 700, W2 = 700, W3 = 35 W1 = 2.032, W2 = 10.160 W1 = 80, W2 = 400 TL130 TL131 0.027 λ, 40.30 Ω W1 = 2.032, W2 = 2.032, W3 = 2.032 W1 = 80, W2 = 80, W3 = 80 TL132 W1 = 2.540, W2 = 2.032 W1 = 100, W2 = 80 TL133 W1 = 1.397, W2 = 2.540 W1 = 55, W2 = 100 W1 = 1.397, W2 = 1.397, W3 = 2.032 W1 = 55, W2 = 55, W3 = 80 TL134 Data Sheet 0.027 λ,50.98 Ω 9 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Output TL201 0.027 λ, 43.96 Ω W1 = 1.778, W2 = 1.778, W3 = 2.032 W1 = 70, W2 = 70, W3 = 80 TL202 (taper) 0.016 λ, 4.88 Ω / 5.86 Ω W1 = 25.654, W2 = 21.107, L = 1.041 W1 = 1010, W2 = 831, L = 41 TL203 (taper) 0.058 λ, 5.86 Ω / 32.33 Ω W1 = 21.107, W2 = 2.794, L = 3.937 W1 = 831, W2 = 110, L = 155 TL204 (taper) 0.017 λ, 32.33 Ω / 43.96 Ω W1 = 2.794, W2 = 1.778, L = 1.270 W1 = 110, W2 = 70, L = 50 TL205 W1 = 1.778, W2 = 2.540 W1 = 70, W2 = 100 TL206 W1 = 2.540, W2 = 1.397 W1 = 100, W2 = 55 TL207 0.000 λ, 4.88 Ω W = 25.654, L = 0.025 W = 1010, L = 1 TL208, TL209 0.089 λ, 53.88 Ω W = 1.270, L = 6.731 W = 50, L = 265 TL210 0.028 λ, 4.88 Ω W = 25.654, L = 1.905 W = 1010, L = 75 TL211, TL217, TL218 0.000 λ, 40.30 Ω W = 2.032, L = 0.025 W = 80, L = 1 TL212 0.089 λ, 43.96 Ω W = 1.778, L = 6.604 W = 70, L = 260 TL213, TL214 0.017 λ, 34.60 Ω W = 2.540, L = 1.270 W = 100, L = 50 TL215 0.378 λ, 50.98 Ω W = 1.397, L = 28.423 W = 55, L = 1119 W1 = 25.654, W2 = 1.270, W3 = 25.654, W4 = 1.270 W1 = 1010, W2 = 50, W3 = 1010, W4 = 50 TL216 TL219, TL221 0.062 λ, 53.88 Ω W = 1.270, L = 4.699 W = 50, L = 185 TL220, TL242 0.065 λ, 30.35 Ω W = 3.048, L = 4.699 W = 120, L = 185 TL222, TL223 0.209 λ, 53.88 Ω W = 1.270, L = 15.748 W = 50, L = 620 TL224, TL225 W = 1.270 W = 50 TL226, TL235 W1 = 3.048, W2 = 9.144 W1 = 120, W2 = 360 TL227, TL228 0.073 λ, 12.48 Ω W1 = 9.144, W2 = 9.144, W3 = 5.080 W1 = 360, W2 = 360, W3 = 200 TL229, TL231 0.044 λ, 12.48 Ω W1 = 9.144, W2 = 9.144, W3 = 3.048 W1 = 360, W2 = 360, W3 = 120 TL230, TL232 0.037 λ, 12.48 Ω W1 = 9.144, W2 = 9.144, W3 = 2.540 W1 = 360, W2 = 360, W3 = 100 TL233, TL234 0.027 λ, 53.88 Ω W1 = 1.270, W2 = 1.270, W3 = 2.032 W1 = 50, W2 = 50, W3 = 80 W1 = 1.270, W2 = 3.048, W1 = 50, W2 = 120 W = 9.144, L = 0.127 W = 360, L = 5 TL236, TL237 TL238, TL239, TL240, TL241 Data Sheet 0.002 λ, 12.48 Ω 10 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Package Outline Specifications Package H-36248-2 CL 45° X 2.720 [45° X .107] 4.826±0.510 [.190±0.020] D S FLANGE 9.779 LID 9.398+0.100 -0.150 [.385] +0.004 .370 19.431±0.510 -0.006 [.765±0.020] CL ] [ 2X R1.626 [R.064] G 4X R1.524 [R.060] 2X 12.700 [.500] 27.940 [1.100] 1.016 [.040] SPH 1.575 [.062] 19.812±0.200 [.780±0.008] 3.632±0.380 0.0381 [.0015] -A- C66065-A2322-C001-01-0027_h-36248-2_11-11-09 CL 34.036 [1.340] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 +0.051/–0.025 [0.004 +0.002/–0.001]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max. Data Sheet 11 of 13 Rev. 02, 2009-11-19 PTFB211501E PTFB211501F Package Outline Specifications (cont.) Package H-37248-2 [45° X .107] 4.826±0.510 [.190±0.020] 4X R0.508+.381 -.127 R.020+0.015 -0.005 D ] [ LID 9.398+0.100 -0.150 FLANGE 9.779 .370+0.004 -0.006 [.385] [ ] 19.431±0.510 [.765±0.020] G 2X 12.700 [.500] SPH 1.575 [.062] 19.812±0.200 [.780±0.008] 1.016 [.040] 0.0381 [.0015] -A- C66065-A2323-C001-01-0027_h-37248-2_11-11-09 CL 3.632±0.380 [.143±0.015] S 20.574 [.810] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 +0.051/–0.025 [0.004 +0.002/–0.001]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 12 of 13 Rev. 02, 2009-11-19 PTFB211501E/F V4 Confidential, Limited Internal Distribution Revision History: 2009-11-19 2009-07-27, Preliminary Data Sheet Previous Version: Page Subjects (major changes since last revision) All Data sheet reflects released product specifications Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2009-11-19 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 13 of 13 Rev. 02, 2009-11-19