PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. 60 -30 50 -35 ACPR 40 -40 30 -45 20 -50 Gain Efficiency -55 0 IMD (dBc), ACPR (dBc) Drain Efficiency (%) VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.84 MHz bandwidth 10 -60 30 35 40 45 PTFA092201F Package H-37260-2 Features 2-Carrier WCDMA Performance IMD PTFA092201E Package H-36260-2 50 Output Power, Avg. (dBm) RF Characteristics • Pb-free, RoHS-compliant and thermally-enhanced packages • Broadband internal matching • Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion = –37 dBc - Adjacent channel power = –39 dBc • Typical CW performance, 960 MHz, 30 V - Output power at P–1dB = 250 W - Gain = 17.5 dB - Efficiency = 59% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1850 mA, POUT = 55 W average ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Intermodulation Distortion IMD — –37 — dBc Gain Gps — 18.5 — dB Drain Efficiency ηD — 30 — % All published data at TCASE = 25 °C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 03.1, 2009-02-20 PTFA092201E PTFA092201F RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1850 mA, POUT = 220 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 17.5 18.5 — dB Drain Efficiency ηD 42 44 — % Intermodulation Distortion IMD — — –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on) — 0.04 — Ω On-State Resistance VGS = 10 V, V DS = 0.1 V Operating Gate Voltage VDS = 30 V, IDQ = 1850 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 700 W 4.0 W/°C Above 25 °C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70 °C, 220 W CW) RθJC 0.25 °C/W Ordering Information Type and Version Package Outline Package Description Shipping Marking PTFA092201E V4 H-36260-2 Thermally-enhanced slotted flange, single-ended Tray PTFA092201E PTFA092201F V4 H-37260-2 Tray PTFA092201F Thermally-enhanced earless flange, single-ended *See Infineon distributor for future availability. Data Sheet 2 of 11 Rev. 03.1, 2009-02-20 PTFA092201E PTFA092201F Typical Performance (data taken in a production test fixture) 2-Carrier WCDMA Performance 2-Carrier WCDMA (high gain tune) VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.84 MHz bandwidth -30 -35 TCASE = 90°C IMD 40 -40 30 -45 20 -50 -55 Gain ACPR Efficiency 0 35 40 45 -30 30 -35 25 -45 IMD 15 ACPR 10 -50 -55 5 Efficiency 30 50 35 -60 40 45 50 Output Power (dBm) Output Power (dBm) Two-carrier WCDMA Power Sweep Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1600 mA, ƒ1 = 889 MHz, ƒ2 = 894, PAR = 7.1 dB each carrier at 0.01% probability VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz 22 70 30 21 60 -20 25 -30 20 -40 15 ACPR -50 10 -60 20 Gain (dB) Efficiency -10 35 Drain Efficiency (%) 0 ACPR (dBc) -40 Gain 20 0 -60 30 35 10 20 30 40 40 18 30 17 20 10 Efficiency 15 0 30 50 35 40 45 50 55 60 Output Power (dBm) Output Power (dBm) Data Sheet 19 16 5 0 50 Gain Drain Efficiency (%) 10 Efficiency (%), Gain (dB) 50 IMD (dBc), ACPR (dBc) Efficiency (%), Gain (dB) TCASE = 25°C IMD (dBc), ACPR (dBc) 60 VDD = 30 V, IDQ = 2000 mA, ƒ = 960 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.84 MHz bandwidth 3 of 11 Rev. 03.1, 2009-02-20 PTFA092201E PTFA092201F Typical Performance (cont.) CW (high gain tuned) Gain & Efficiency vs. Output Power 2-Tone Broadband Performance VDD = 30 V, IDQ = 1850 mA, POUT = 110 W VDD = 30 V, IDQ = 2000 mA, ƒ = 960 MHz 21 60 45 Gain (dB) 20 50 Gain 19 40 18 30 17 20 Efficiency 16 10 15 35 40 45 50 55 -5 Efficiency 40 -10 Return Loss 35 -20 25 -25 20 -30 15 880 60 -15 30 Gain 0 30 0 Return Loss (dB) 50 Efficiency (%), Gain (dB) 70 Drain Efficiency (%) 22 900 920 940 960 980 -35 1000 Frequency (MHz) Output Power (dBm) 2-Tone Broadband (tuned for high gain) Power Sweep, CW VDD = 30 V, IDQ = 2000 m A, POUT = 80 W VDD = 30 V, ƒ = 960 MHz, series show IDQ 50 Return Los s -10 35 -15 30 -20 25 -25 15 880 1550 mA 18 1450 mA 920 940 960 980 17 -35 1000 30 35 40 45 50 55 Output Power (dBm) Frequency (MHz) Data Sheet 2300 mA 19 -30 Gain 900 Power Gain (dB) -5 Efficiency 40 20 20 Return Loss (dB) Efficiency (%), Gain (dB) 45 0 4 of 11 Rev. 03.1, 2009-02-20 PTFA092201E PTFA092201F Typical Performance (cont.) Intermodulation Distortion vs. Output Power Intermodulation Distortion vs. Output Power (high gain tune) VDD = 30 V, IDQ = 1850 mA, ƒ1 = 960, ƒ2 = 959 MHz VDD = 30 V, IDQ = 2000 mA, ƒ1 = 859, ƒ 2 = 960 MHz -20 -20 -30 3rd Order -40 -50 IMD (dBc) 5th -60 7th -70 3rd Order -40 5th -50 -60 7th -70 -80 -80 30 35 40 45 50 30 55 35 40 45 50 55 Output Power, PEP (dBm) Output Power, PEP (dBm) Output Power vs. Supply Voltage IS-95 CDMA Performance IDQ = 1850 mA, ƒ = 960 MHz VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz 40 55 -40 Drain Efficiency (%) Output Power (dBm) Adj 750 kHz 54 53 52 30 -50 20 -60 Efficiency Alt1 1.98 MHz 10 -70 0 51 24 26 28 30 32 34 Supply Voltage (V) Data Sheet -80 25 36 Adj. Ch. Power Ratio (dBc) IMD (dBc) -30 30 35 40 45 50 Output Power, Avg. (dBm) 5 of 11 Rev. 03.1, 2009-02-20 PTFA092201E PTFA092201F Typical Performance (cont.) Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current 2.334 A Normalized Bias Voltage (V) 1.03 4.65 A 1.02 9.33 A 11.64 A 1.01 13.98 A 1.00 16.32 A 0.99 18.66 A 21 A 0.98 0.97 0.96 -20 0 20 40 60 80 100 Case Temperature (°C) Z Load G Z Load D LOA D S T OW AR NGT H E L E AV 980 MHz S 900 MHz Z Load Ω MHz R jX R jX 900 2.256 –1.363 1.722 –0.413 920 2.250 –1.094 1.653 –0.109 940 2.282 –0.826 1.651 0.186 960 2.239 –0.545 1.562 0.518 980 2.288 –0.307 1.562 0.795 Data Sheet 6 of 11 900 MHz Z Source 0.1 --- W Z Source Ω Frequency 980 MHz 0.1 Z Source Z0 = 50 Ω 0.0 D 0 .1 - W AV E LE NGT H S T OW A RD G Broadband Circuit Impedance Rev. 03.1, 2009-02-20 PTFA092201E PTFA092201F Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R5 10 V R6 5.1K V C4 10µF 35V C5 0.1µF C6 1µF L1 V DD R7 5.1K V C7 33pF C11 33pF l6 RF_IN l1 l3 l4 C9 3.9pF C14 100µF 50V C23 2.6pF DUT l2 C13 10µF 50V C15 0.1µF C16 10µF 50V l7 R8 10 V C8 33pF C12 1µF l9 l5 C10 4.9pF l10 l11 C25 33pF l12 l13 RF_OUT C21 0.1µF C22 10µF 50V C24 2.6pF l8 C17 33pF C18 1µF C19 10µF 50V C20 100µF 50V a0 9 2 2 0 1 e f_ s c h L2 Reference circuit block diagram for ƒ = 960 MHz Circuit Assembly Information DUT PCB PTFA092201E or PTFA092201F 0.76 mm [.030"] thick, εr = 3.48 LDMOS Transistor Rogers RO4350 1 oz. copper Microstrip Electrical Characteristics at 960 MHz1 Dimensions: L x W (mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6 l7, l8 l9 l10 (taper) l11 (taper) l12 l13 0.068 0.041 0.040 0.092 0.025 0.208 0.200 0.102 0.021 0.094 0.022 0.035 λ, 52.0 Ω λ, 38.0 Ω λ, 38.0 Ω λ, 7.8 Ω λ, 7.8 Ω λ, 78.3 Ω λ, 60.1 Ω λ, 8.4 Ω λ, 8.4 Ω / 10.1 Ω λ, 10.1 Ω / 37.7 Ω λ, 37.0 Ω λ, 52.0 Ω 12.78 x 1.60 7.57 x 2.54 7.34 x 2.54 15.95 x 17.83 4.29 x 17.83 40.64 x 0.74 40.64 x 1.24 17.65 x 16.48 3.56 x 16.48 / 13.36 16.38 x 13.36 / 2.64 4.04 x 2.64 6.55 x 1.60 0.503 0.298 0.289 0.628 0.169 1.600 1.500 0.695 0.140 0.645 0.159 0.258 x 0.063 x 0.100 x 0.100 x 0.702 x 0.702 x 0.029 x 0.049 x 0.649 x 0.649 / 0.526 x 0.526 / 0.104 x 0.104 x 0.063 1Electrical characteristics are rounded. Data Sheet 7 of 11 Rev. 03.1, 2009-02-20 PTFA092201E PTFA092201F Reference Circuit (cont.) RO4350_.030 RO4350_.030 R5 QQ1 R4 C4 C5 C6 C3 R3 C2 R7 R1 R2 R6 C7 C1 C16 VDD VDD C11 LM L1 Q1 C14 C12 C13 R8 C23 C8 RF_IN C15 RF_OUT C25 C24 C9 C19 C10 C18 C21 C20 C17 VDD L2 C22 A082201in_02 A092201in_02 A082201out_02 A092201out_02 a092201ef _assy Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5, C15, C21 C6, C12, C18 C7, C8, C11, C17, C25 C9 C10 C13, C16, C19, C22 C14, C20 C23, C24 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R8 R6, R7 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Capacitor, 1 µF Ceramic capacitor, 33 pF Ceramic capacitor, 3.9 pF Ceramic capacitor, 4.9 pF Tantalum capacitor, 10 µF, 50 V Electrolytic capacitor, 100 µF, 50 V Ceramic capacitor, 2.6 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip resistor 1.2 k-ohms Chip resistor 1.3 k-ohms Chip resistor 2 k-ohms Potentiometer 2 k-ohms Chip resistor 10 ohms Chip resistor 5.1 k-ohms Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Garrett Electronics Digi-Key ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 920C105 100B 330 100B 3R9 100B 4R9 TPSE106K050R0400 P5571-ND 100B 2R6 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P5.1KECT-ND *Gerber Files for this circuit available on request Data Sheet 8 of 11 Rev. 03.1, 2009-02-20 PTFA092201E PTFA092201F Package Outline Specifications Package H-36260-2 C66065-A2324-C001-01-0027 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate. 4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 5. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] 6. All tolerances ± 0.25 [.01] / ± 0.127 [.005] unless specified otherwise. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 11 Rev. 03.1, 2009-02-20 PTFA092201E PTFA092201F Package Outline Specifications (cont.) Package H-37260-2 C66065-A2325-C001-01-0027 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate. 4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]. 5. Gold plating thickness: S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch] 6. All tolerances ± 0.25 [.01] / ± 0.127 [.005] unless specified otherwise. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 10 of 11 Rev. 03.1, 2009-02-20 PTFA092201E/F V4 Confidential, Limited Internal Distribution Revision History: 2009-02-20 2006-06-05, Data Sheet Rev. 02, Product V1 Previous Version: Page Subjects (major changes since last revision) all 8 New product version V4, new package diagram and information. Fixed typing error ames for final page. Misc updates. Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-02-20 Published by Infineon Technologies AG 81726 Munich, Germany © 2006 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.