Bulletin I25195 rev. B 02/00 ST1280C..K SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 2310A Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk Typical Applications DC motor controls Controlled DC power supplies AC controllers case style A-24 (K-PUK) Major Ratings and Characteristics Parameters ST1280C..K Units 2310 A 55 °C 4150 A 25 °C @ 50Hz 42500 A @ 60Hz 44500 A @ 50Hz 9027 KA2s @ 60Hz 8240 KA2s IT(AV) @ Ths IT(RMS) @ Ths ITSM 2 It VDRM /VRRM tq typical TJ www.irf.com 400 to 600 V 200 µs - 40 to 125 °C 1 ST1280C..K Series Bulletin I25195 rev. B 02/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, max. repetitive VRSM , maximum non- I DRM/I RRM max. Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max V V mA 04 400 500 06 600 700 Type number ST1280C..K 100 On-state Conduction Parameter IT(AV) Max. average on-state current @ Heatsink temperature ST1280C..K 2310 (885) A 180° conduction, half sine wave 55 (85) °C double side (single side) cooled IT(RMS) Max. RMS on-state current 4150 ITSM Max. peak, one-cycle 42500 non-repetitive surge current 44500 I 2t Maximum I2t for fusing Units Conditions @ 25°C heatsink temperature double side cooled A V T(TO)1 Low level value of threshold voltage r t1 Low level value of on-state t = 8.3ms reapplied Sinusoidal half wave, 9027 t = 10ms No voltage Initial TJ = TJ max. 8241 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 90270 KA2s High level value of on-state slope resistance KA2√s t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 0.83 V (I > π x IT(AV)),T J = TJ max. 0.90 (16.7% x π x IT(AV) < I < π x IT(AV)), T J = TJ max. 0.077 slope resistance r t2 100% VRRM t = 10ms voltage V T(TO)2 High level value of threshold reapplied 35700 5828 Maximum I2√t for fusing No voltage t = 8.3ms 37400 6383 I 2√t t = 10ms mΩ (I > π x IT(AV)),TJ = TJ max. 0.068 V TM Max. on-state voltage 1.44 IH Maximum holding current 600 IL Typical latching current 1000 V mA I = 8000A, TJ = TJ max, t = 10ms sine pulse pk p T J = 25°C, anode supply 12V resistive load Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d Typical delay time ST1280C..K 1000 Units Conditions A/µs 2 Typical turn-off time 200 r TJ = T J max, anode voltage ≤ 80% VDRM Gate current 1A, di /dt = 1A/µs g 1.9 µs tq Gate drive 20V, 20Ω, t ≤ 1µs V = 0.67% VDRM, TJ = 25°C d ITM = 550A, TJ = T J max, di/dt = 40A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs www.irf.com ST1280C..K Series Bulletin I25195 rev. B 02/00 Blocking Parameter ST1280C..K Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs T J = TJ max. linear to 80% rated V DRM IRRM IDRM Max. peak reverse and off-state leakage current 100 mA TJ = TJ max, rated VDRM /V RRM applied Triggering Parameter PGM ST1280C..K Maximum peak gate power Max. peak positive gate current 3.0 Maximum peak negative TYP. VGT VGD TJ = TJ max, t ≤ 5ms V T J = TJ max, tp ≤ 5ms mA TJ = 25°C DC gate voltage required - 100 200 50 - 1.4 - 1.1 3.0 0.9 - DC gate current not to trigger DC gate voltage not to trigger p MAX. 200 TJ = - 40°C DC gate current required to trigger IGD A 5.0 gate voltage to trigger p TJ = TJ max, f = 50Hz, d% = 50 20 gate voltage IGT W 3 +VGM Maximum peak positive -VGM TJ = TJ max, t ≤ 5ms 16 PG(AV) Maximum average gate power IGM Units Conditions 10 0.25 TJ = 125°C TJ = - 40°C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 25°C TJ = 125°C mA V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Thermal and Mechanical Specification Parameter ST1280C..K TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, F wt Units °C 0.042 0.021 0.006 DC operation single side cooled K/W K/W case to heatsink 0.003 Mounting force, ± 10% 24500 N (2500) (Kg) 425 g Approximate weight Case style www.irf.com A-24 (K-PUK) Conditions DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table 3 ST1280C..K Series Bulletin I25195 rev. B 02/00 ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conduction Rectangular conduction Conduction angle Units Conditions Single Side Double Side Single Side Double Side 180° 0.003 0.003 0.002 0.002 120° 0.004 0.004 0.004 0.004 90° 0.005 0.005 0.005 0.005 60° 0.007 0.007 0.007 0.007 30° 0.012 0.012 0.012 0.012 TJ = TJ max. K/W Ordering Information Table Device Code ST 128 1 2 0 C 06 K 1 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - K = Puk Case A-24(K-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard selection) L 4 = 1000V/µsec (Special selection) www.irf.com ST1280C..K Series Bulletin I25195 rev. B 02/00 Outline Table 1 (0.04) MIN. TWO PLACES 47.5 (1.87) DIA. MAX. 2 7 . 5 ( 1. 0 8 ) M A X . TWO PLACES PIN RECEPTACLE AMP. 60598-1 67 (2.6) DIA. MAX. 20° ± 5° 7 4 .5 (2 .9 ) D I A . M A X . 4.75 (0.2) NOM. 44 (1.73) Case Style A-24 (K-PUK) All dimensions in millimeters (inches) 2 HOLES DIA. 3.5 (0.14) x 2.1 (0.1) DEEP Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 130 ST1280C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 110 100 90 Conduction Angle 80 70 30˚ 60 60˚ 90˚ 50 120˚ 180˚ 40 0 400 800 1200 1600 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) CREPAGE DESTANCE 28.88 (1.137) MIN. STRIKE DISTANCE 17.99 (0.708) MIN. 130 ST1280C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 110 100 90 80 Conduction Period 70 60 30˚ 50 60˚ 90˚ 40 30 120˚ 180˚ 20 0 500 1000 1500 DC 2000 2500 Average On-state current (A) Average On-state current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST1280C..KSeries 130 ST1280C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 Conduction Angle 80 70 60 50 30˚ 60˚ 90˚ 40 120˚ 180˚ 30 0 500 1000 1500 2000 2500 3000 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Bulletin I25195 rev. B 02/00 130 ST1280C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 80 Conduction Period 70 60 30˚ 50 40 30 90˚ 120˚ 180˚ 20 0 1000 Average On-state Current (A) 2400 2000 RMS Limit 1600 1200 Conduction Angle 800 ST1280C..K Series T J = 125˚C 400 0 0 500 1000 1500 2000 2500 3000 4000 5000 5000 4500 DC 180˚ 120˚ 90˚ 60˚ 30˚ 4000 3500 3000 2500 RMS Limit 2000 Conduction Period 1500 1000 ST1280C..K Series TJ = 125˚C 500 0 0 1000 2000 3000 4000 5000 Average On-state Current (A) Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 40000 At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125˚C 35000 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 30000 25000 20000 ST1280C..K Series 15000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 Maximum Average On-state Power Loss (W) 2800 3000 Fig. 4 - Current Ratings Characteristics Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Peak Half Sine Wave On-state Current (A) 3600 180˚ 120˚ 90˚ 60˚ 30˚ 2000 DC Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 3200 60˚ 45000 40000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125 ˚C 35000 No Voltage Reapplied Rated V RRMReapplied 30000 25000 20000 ST1280C..K Series 15000 0.01 0.1 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST1280C..K Series Bulletin I25195 rev. B 01/00 Instantaneous On-state Current (A) 100000 10000 TJ = 25˚C TJ = 125˚C 1000 ST1280C..K Series 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) (K/W) Fig. 9 - On-state Voltage Drop Characteristics 0.1 Transient Thermal Impedance Z thJ-hs Steady State Value R thJ-hs = 0.042 K/W (Single Side Cooled) R thJ-hs = 0.021 K/W (Double Side Cooled) 0.01 (DC Operation) ST1280C..K Series 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (1) PGM = 16W, tp = 4ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (a ) (b ) 0.1 0.001 0.01 T j= -4 0 °C VG D IG D Tj= 2 5 ° C 1 Tj= 12 5 °C Instantaneous Gate Voltage (V) 100 ( 1 ) (2) (3) Frequency Limited by PG(AV) Device: ST1280C..K Series 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics www.irf.com 7