IRF JANSR2N7392

PD - 91394E
IRHM7460SE
JANSR2N7392 500V
N-CHANNEL
REF: MIL-PRF-19500/661
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
®
™
RAD Hard HEXFET TECHNOLOGY
Product Summary
Part Number
IRHM7460SE
Radiation Level RDS(on)
100K Rads (Si)
0.32Ω
ID
18A
QPL Part Number
JANSR2N7392
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-254AA
Features:
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
18
11.7
72
250
2.0
±20
500
18
25
3.8
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063 in. (1.6mm) from case for 10 sec.)
9.3 (Typical)
C
g
For footnotes refer to the last page
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1
5/17/01
IRHM7460SE
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Typ Max Units
Test Conditions
500
—
—
V
VGS = 0V, ID = 1.0mA
—
0.66
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
2.5
6.0
—
—
—
—
—
—
—
—
0.32
0.36
4.5
—
50
250
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
180
30
95
29
93
90
59
—
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
VGS = 12V, ID = 11.7A ➃
VGS = 12V, ID = 18A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 11.7A ➃
VDS= 400V ,VGS=0V
VDS = 400V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 18A
VDS = 250V
Ω
V
S( )
Ω
Electrical Characteristics
Pre-Irradiation
µA
nA
nC
VDD =250V, ID =18A,
VGS =12V, RG = 2.35Ω
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
3500
730
260
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
18
72
A
VSD
t rr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.8
800
16
V
nS
µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 18A, VGS = 0V ➃
Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
M i n Typ Max Units
—
—
—
— 0.50
0.21 —
—
48
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Pre-Irradiation
IRHM7460SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
V/5JD
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Units
Test Conditions "
V
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 400V, VGS=0V
0.32
Ω
VGS = 12V, ID = 11.7A
0.32
1.8
Ω
V
VGS = 12V, ID = 11.7A
VGS = 0V, ID = 18A
100K Rads (Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source# $
On-State Resistance (TO-3)
Static Drain-to-Source# $
On-State Resistance (TO-254)
Diode Forward Voltage# $
Min
Max
500
2.0
—
—
—
—
4.5
100
-100
50
nA
—
—
—
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
Ni
LET
Energy
MeV/(mg/cm )) (MeV)
28
285
36.8
305
26.6
265
V ,5 (V)
Range
@V/5=0V @V/5=-5V @V/5=-10V @V/5=-15V @V/5=-20V
(µm)
43
375
375
375
375
375
39
350
350
350
325
300
42
—
375
—
—
—
400
VDS
300
Cu
200
Br
Ni
100
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7460SE
100
Pre-Irradiation
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
1
5.0V
0.1
20us PULSE WIDTH
TJ = 25 oC
0.01
0.1
1
10
10
5.0V
1
1
V DS = 50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
11.0
12.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 25 o C
10
100
Fig 2. Typical Output Characteristics
100
10
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 150 o C
20us PULSE WIDTH
TJ = 150 o C
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
0.1
5.0
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
TOP
ID = 18A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
6000
Ciss
4000
Coss
Crss
2000
0
1
10
20
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
8000
IRHM7460SE
VDS = 400V
VDS = 250V
VDS = 100V
16
12
8
4
0
100
ID = 18A
FOR TEST CIRCUIT
SEE FIGURE 13
0
VDS , Drain-to-Source Voltage (V)
80
120
160
200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
40
10
100
TJ = 25 ° C
1
10us
100us
10
1ms
V GS = 0 V
0.1
0.2
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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2.2
1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
10ms
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHM7460SE
Pre-Irradiation
20
RD
VDS
VGS
ID , Drain Current (A)
16
D.U.T.
RG
12
+
-VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( o C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM7460SE
L
D.U.T.
RG
V/5
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
TOP
1000
15V
VDS
EAS , Single Pulse Avalanche Energy (mJ)
1200
Fig 12a. Unclamped Inductive Test Circuit
A
BOTTOM
ID
8A
11A
18A
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHM7460SE
Pre-Irradiation
Footnotes:
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 50V, starting TJ = 25°C, L= 3.1 mH
Peak IL = 18A, VGS = 12V
➂ ISD ≤ 18A, di/dt ≤110A/µs,
VDD ≤ 500V, TJ ≤ 150°C
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with V DS Bias.
400 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions —TO-254AA
.12 ( .005 )
13.84 ( .545 )
13.59 ( .535 )
3.78 ( .149 )
3.53 ( .139 )
-A-
20.32 ( .800 )
20.07 ( .790 )
17.40 ( .685 )
16.89 ( .665 )
31.40 ( 1.235 )
30.39 ( 1.199 )
3.81 ( .150 )
2X
6.60 ( .260 )
6.32 ( .249 )
1
2
13.84 ( .545 )
13.59 ( .535 )
3
-C-
3X
1.14 ( .045 )
0.89 ( .035 )
.50 ( .020 )
.25 ( .010 )
-B1.27 ( .050 )
1.02 ( .040 )
LEGEND
1 - COLL
2 - EMIT
3 - GATE
3.81 ( .150 )
M C A M B
M C
NOTES:
LEGEND
1- DRAIN
2- SOURCE
3- GATE
IRHM57163SED
IRHM57163SEU
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
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TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 05/01
8
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