PD - 93819B IRHG9110 100V, QUAD P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHG9110 100K Rads (Si) 1.1Ω IRHG93110 300K Rads (Si) 1.1Ω ID -0.75A -0.75A MO-036AB TM HEXFET® International Rectifier’s RAD-Hard MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings (Per Die) Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Units -0.75 -0.5 -3.0 1.4 0.011 ±20 75 -0.75 0.14 2.4 ➂ -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 (0.63in./1.6mm from case for 10s) 1.3 (Typical) g For footnotes refer to the last page www.irf.com 1 02/20/03 IRHG9110 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die) Parameter Min Drain-to-Source Breakdown Voltage -100 — — V — -0.11 — V/°C — — -2.0 0.6 — — — — — — — — 1.2 1.1 -4.0 — -25 -250 Ω — — — — — — — — — — — — — — — — — — — 10 -100 100 15 4.0 4.3 22 19 66 51 — ∆BVDSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA nC VGS = -12V, ID = -0.75A➃ VGS = -12V, ID =- 0.5A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -0.5A ➃ VDS= -80V, VGS= 0V VDS = -80V, VGS = 0V, TJ =125°C VGS = - 20V VGS = 20V VGS = -12V, ID = -0.75A, VDS = -50V ns VDD = -50V, ID = -0.75A, VGS = -12V, RG = 24Ω V S( ) Ω BVDSS µA nA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 335 100 22 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -0.75 -3.0 -2.5 90 257 Test Conditions A V nS nC Tj = 25°C, IS = -0.75A, VGS = 0V ➃ Tj = 25°C, IF = -0.75A, di/dt ≥ -100A/µs VDD ≤ -25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max — — — — 17 90 Units °C/W Test Conditions Typical socket mount For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHG9110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ (Per Die) Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-39) Static Drain-to-Source ➃ On-State Resistance (MO-036AB) Diode Forward Voltage ➃ Units 300K Rads (Si)2 Test Conditions Min Max Min Max -100 - 2.0 — — — — — - 4.0 -100 100 -25 1.06 -100 -2.0 — — — — — -5.0 -100 100 -25 1.06 µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS =-80V, VGS =0V VGS = -12V, ID =-0.5A — 1.1 — 1.1 Ω VGS = -12V, ID =-0.5A — -2.5 — -2.5 V VGS = 0V, IS = -0.75A V nA 1. Part number IRHG9110 2. Part number IRHG93110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area (Per Die) Ion Cu Br I LET MeV/(mg/cm 2)) 28.0 36.8 59.8 Energy (MeV) 285 305 343 Range (µm) @VGS=0V @VGS=5V 43.0 -100 -100 39.0 -100 -100 32.6 -60 — VDS (V) @VGS=10V -100 -70 — @V GS=15V -70 -50 — @VGS=20V -60 -40 — -120 -100 VDS -80 Cu Br I -60 -40 -20 0 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHG9110 100 Pre-Irradiation 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V 10 -5.0V 1 0.1 20µs PULSE WIDTH T = 25 C ° J 0.01 0.1 1 10 10 -5.0V 1 0.1 3.0 10 TJ = 150 ° C V DS = -50V 20µs PULSE WIDTH 11 13 15 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 25 ° C 9 10 100 Fig 2. Typical Output Characteristics 100 7 ° J 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20µs PULSE WIDTH T = 150 C 0.01 0.1 100 -VDS , Drain-to-Source Voltage (V) 5 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -I D, Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP ID = -0.75A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = Ciss = Crss = Coss = 500 20 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd -VGS , Gate-to-Source Voltage (V) 600 C, Capacitance (pF) IRHG9110 400 Ciss 300 200 Coss 100 Crss 10 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 -VDS , Drain-to-Source Voltage (V) 2 4 6 8 10 12 14 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 -II D , Drain Current (A) -ISD , Reverse Drain Current (A) VDS =-80V VDS =-50V VDS =-20V 16 0 1 ID = -0.75A TJ = 150 ° C TJ = 25 ° C 1 1ms 1 10ms V GS = 0 V 0.1 0.0 1.0 2.0 3.0 4.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 5.0 0.1 TC = 25 °C TJ = 150 °C Single Pulse 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHG9110 Pre-Irradiation 0.8 RD V DS VGS -I D , Drain Current (A) 0.6 D.U.T. RG - + 0.5 V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 0.3 Fig 10a. Switching Time Test Circuit 0.2 td(on) tr t d(off) tf VGS 10% 0.0 25 50 75 100 TC , Case Temperature 125 150 ( °C) 90% VDS Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 P DM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com Pre-Irradiation IRHG9110 L VDS tp VD D A IA S D R IV E R 0 .0 1 Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) D .U .T. RG V0GS -2 V 200 ID -0.34A -0.47A BOTTOM -0.75A TOP 160 120 80 40 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -12V 12V .2µF .3µF -12V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHG9110 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = - 25V, starting TJ = 25°C, L= 267mH, Peak IL = - 0.75A, VGS = -12V ➂ ISD ≤ - 0.75A, di/dt ≤ - 132A/µs, VDD ≤ -100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A ➅ Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A Case Outline and Dimensions — MO-036AB IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03 8 www.irf.com